Sebastian Steiger's Publications
NEMO5
[P10] S. Steiger, M. Povolotskyi, H.-H. Park, T. Kubis and G. Klimeck, NEMO5: A Parallel Multiscale Nanoelectronics Tool, IEEE Transactions on Nanotechnology (accepted)
[C9] S. Steiger, M. Povolotskyi, H.-H. Park, T. Kubis, G. Hegde, B. Haley, M. Rodwell and G. Klimeck, The Nanoelectronic Modeling Tool NEMO 5: Capabilities, Validation, and Application to Sb-Heterostructures, Proc. Device Research Conference (2011)
Phonons
[P11] S. Steiger, M. Salmani-Jelodar, D. Areshkin, A. Paul, T. Kubis, M. Povolotskyi, H.-H. Park and G. Klimeck, Enhanced valence force field model for the lattice properties of gallium arsenide, Phys. Rev. B (submitted)
[C8] M. Salmani-Jelodar, S. Steiger, A. Paul and G. Klimeck, Parameter Fitting for Lattice Properties of Gallium Arsenide using Parallel Genetic Algorithm, 2011 IEEE Congress on Evolutionary Computation
L-valley transistors
[C10] S. Steiger, M. Rodwell, G. Hegde and G. Klimeck, High Ballistic On-Currents in G-L and L-Valley III-V MOSFETs, submitted to IEDM (2011)
[C6] M. Rodwell, W. Frensley, S. Steiger, E. Chagarov, S. Lee, H. Ryu, Y. Tan, G. Hegde, L Wang, J. Law, T. Boykin, G. Klimeck, P. Asbeck, A. Kummel and J. N. Schulman, III-V FET Channel Designs for High Current Densities and Thin Inversion Layers, Proc. Device Research Conference (2010)
[C5] M. Rodwell, U. Singisetti, M. Wistey, G. Burek, A. Carter, A. Baraskar, J. Law, B. Thibeault, Eun Ji Kim, B. Shin, Yong-ju Lee, S. Steiger, S. Lee, H. Ryu, Y. Tan, G. Hegde, L. Wang, E. Chagarov, A.C. Gossard, W. Frensley, A. Kummel, C. Palmstrom, P.C. McIntyre, T. Boykin, G. Klimeck and P. Asbeck, III-V MOSFETs: Scaling laws, scaling limits, fabrication processes, Proc. IPRM (2010)
k.p theory and spurious solutions
[P1] R.G. Veprek, S. Steiger and B. Witzigmann, Ellipticity and the spurious solution problem of kp envelope equations, Phys. Rev. B 76, 165320 (2007)
[P6] R.G. Veprek, S. Steiger and B. Witzigmann, Operator ordering, ellipticity and spurious solutions in kp calculations of III-nitride nanostructures, Opt. and Quant. Electron. 40, 1169 (2009) (proceedings of NUSOD-8)
tdkp/AQUA – simulating 1D-3D optoelectronic structures
[P3] S. Steiger, R.G. Veprek and B. Witzigmann, Unified Simulation of transport and luminescence in optoelectronic nanostructures, J. Comput. Electron. 7, 509-520 (2008)
[P4] R.G. Veprek, S. Steiger and B. Witzigmann, Reliable kp band structure calculation for nanostructures using finite elements, J. Comput. Electron. 7, 521-529 (2008)
[P7] B. Witzigmann, R.G. Veprek, S. Steiger and J. Kupec, Comprehensive modeling of optoelectronic nanostructures, J. Comput. Electron. 8, 389-397 (2009)
[P8] S. Steiger, R.G. Veprek and B. Witzigmann, tdkp/AQUA: unified modeling of electroluminescence in nanostructures, Opt. and Quant. Electron. (2010) (proceedings of NUSOD-9)
[C3] S. Steiger, R.G. Veprek and B. Witzigmann, Electroluminescence in nanostructures of different dimensionalities: a comparative simulation study, Proc. SPIE 7211, 72110L (2009) (proceedings of OPTO-2009 / Photonics West)
LEDs in the NEGF theory
[C4] S. Steiger, R.G. Veprek and B. Witzigmann, Electroluminescence from a quantum-well LED using NEGF, Proc. IWCE-13 (2009)
Nanocolumns
[P5] R.G. Veprek, S. Steiger and B. Witzigmann, GaN-based nanocolumn LEDs: impact of strain engineering on the electro-optical performance, phys. stat. sol. C 6, S506-509 (2009) (proceedings of IWN-2008)
[P9] C. Boecklin, R.G. Veprek, S. Steiger and B. Witzigmann, Computational study of an InGaN/GaN nanocolumn light-emitting diode, Phys. Rev. B 81, 155306 (2010)
Other
[C7] P. Sengupta, S. Steiger, S. Lee, H. Ryu and G. Klimeck Multiscale Modeling of Quantum Dot Heterostructures, MRS Spring Meeting 2011, YY10.2, San Francisco CA
[P2] B. Witzigmann, M. Tomamichel, S. Steiger, R.G. Veprek, K. Kojima and U.T. Schwarz, Analysis of gain and luminescence in violet and blue GaInN/GaN quantum-wells, IEEE J. Quantum Electron. 44, 144-149 (2008)
[C2] B. Witzigmann, S. Steiger, M. Tomamichel, R.G. Veprek, K. Kojima and U.T. Schwarz, Optical gain in 407nm and 470nm InGaN/GaN heterostructures: signature of quantum-dot states, Proc. APOC-2007 (2007)
[C1] R.G. Veprek, S. Steiger and B. Witzigmann, Optoelectronic device simulation: continuum or atomistic methods?, Proc. IWCE-12 (2007)