Saima Sharmin

Design optimization of polarization-engineered ІII-Nitride tunnel FETs

OBJECTIVE:

  • Model optimized TFETs by utilizing polarization induced field in Nitrides (high ION and low SS at low supply voltage)

SIMULATION METHOD:

  • Ballistic simulation using Qunatum Transmitting Boundary Method (QTBM) via NEMO5.

RESULTS:

  • Geometry with the best gate control (low Subthreshold Swing, SS) and highest ION is explored.
  • Good I-V characteristics observed even at supply voltage as low as 200mV for L-shaped geometry.

Powerpoint slide as pdf.

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