Matthias Tan

INTRODUCTION:

• Charge stability diagram/Coulomb diamond key device metric of single atom transistor
• Can we model the atomistic effects in the single atom transistor’s Coulomb diamond?

METHODOLOGY:

• Rate-equation formalism
• Atomistic modeling (density of states, single phosphorus dopant energy states)

RESULTS:

• DOS fluctuations in leads major reason for observed “streaks” in experimental Coulomb diamond
• Asymmetric lead-to-channel coupling and inelastic scattering affect Coulomb diamond’s shape / streak profile
• Manuscript in preparation (Tan, et. al.)