Matthias Tan

PROJECT OVERVIEW: Charge Stability and Density of States Fluctuations Modeling in a Single Atom Transistor

INTRODUCTION:

  • Charge stability diagram/Coulomb diamond key device metric of single atom transistor
  • Can we model the atomistic effects in the single atom transistor’s Coulomb diamond?

METHODOLOGY:

  • Rate-equation formalism
  • Atomistic modeling (density of states, single phosphorus dopant energy states)

RESULTS:

  • DOS fluctuations in leads major reason for observed “streaks” in experimental Coulomb diamond
  • Asymmetric lead-to-channel coupling and inelastic scattering affect Coulomb diamond’s shape / streak profile
  • Manuscript in preparation (Tan, et. al.)

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