Journals (3)
"Spin blockade and exchange in Coulomb-confined silicon double quantum dots"
Nature Nanotechnology 9, 430–435 (2014), Published online 13 April 2014;doi:10.1038/nnano.2014.6320140
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"Limits to Metallic Conduction in Atomic-Scale Quasi-One-Dimensional Silicon Wires"
Phys. Rev. Lett. 113, 246802 – Published 10 December 2014;doi:10.1103/PhysRevLett.113.24680220140
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"Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations"
Nanotechnology 22 (2011) 315709 (14pp);doi:10.1088/0957-4484/22/31/3157092011Cited by 18 / 26 Downloads
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Proceedings (2)
"Statistical Modeling of Ultra-Scaled Donor-Based Silicon Phosphorus Devices"
2014 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI USA June 8-9, 2014, Page(s): 1 - 2;doi:10.1109/SNW.2014.73485892014Not Cited Yet
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"Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics"
IEEE Silicon Nanoelectronics Workshop (SNW), Page(s): 1 - 2, 8-9 June 2014;doi:10.1109/SNW.2014.73485502014Not Cited Yet
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Conferences (14)
"Atomistic Modelling of Metallic Conduction Limits in Quasi 1-D Silicon Wires"
Silicon Quantum Electronics Workshop, August 3-4, 2015, Takamatsu, Japan20150
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"Atomistic modeling of STM patterned donor devices for Si quantum computing"
17th International Workshop on Computational Electronics (IWCE), Paris, France, 201420140
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"Nanoelectronic Modeling (NEMO) for Si-based Quantum Electronics"
International workshop on Silicon Quantum electronics Villard-de-Lans 7-8 February 201320130
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"Atomistic, Multi-Scale, Multi-Physics Modeling of Extended Si Quantum Devices – Outreach Opportunities for CQCT"
CQCT Workshop, Chowder Bay, Sydney, Feb 15-16, 2012.20120
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"Million-Atom Electronic Structure Simulations for Realistically Large Si-Based Quantum Devices"
International Workshop On Silicon Quantum Electronics, Chowder Bay, Sydney, Feb 13-14, 2012.20120
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"Silicon at the Fundamental Scaling Limit: Atomic-scale Donor-based Quantum Electronics"
ICYRAM 2012 Session EM1: Inorganic Semiconductor (and Metal) Nanoelectronics 20120
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"Atomistic, Multi-Scale, Multi-Physics Modeling of Single Impurity Devices"
International Workshop on Silicon Quantum Electronics, Sydney, Feb 13-14, 201220120
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"Modeling of charge stability diagrams and lead density of states fluctuations in donor-based (Si:P) quantum dot devices-based"
International Conference on quantum Dots (QD2012), May 13-18 2012, Santa Fe, New Mexico, USA20120
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"Theoretical correlation between quantum dot composition and polarization properties"
International Conference on quantum Dots DOTS (QD2012), May 13-18 2012, Santa Fe, New Mexico, USA20120
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"Modeling of charge stability diagrams and lead density of states fluctuations in a single phosphorus donor transistor"
International Workshop on Silicon Quantum Electronics, oral presentation, Sergeants Mess, Chowder Bay, Sydney, Australia, Feb 13-14, 2012.20120
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"Full-band study of ultra-thin Si:P nanowires "
Computational Electronics (IWCE) International Workshop on, Page(s): 1 - 4 , May 21-22, 2012; doi:10.1109/IWCE.2012.624285720120
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"Atomistic, Multi-Scale, Multi-Physics Modeling of Extended Si Quantum Devices"
Center for Quantum Computing (CQCT) 2011 Annual Workshop, The Seargents Mess, Chowder Bay,Sydney. Feb 15-16, 2011.20110
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"Tight-binding Simulations on a Deterministic Single Donor Transistor"
International Workshop on Silicon Quantum Electronics, oral presentation, Denver, CO, Aug. 14-15, 201120110
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"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Denver, August 11-12, 201120110
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Others (2)
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Denver, August 16-17, 201120110
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"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Denver, August 11-12, 2011.20110
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