Matthias Tan

INTRODUCTION:

• Experiments observed tunability between metallic and insulating behavior in ultra-thin, highly-doped Si:P nanowires
• Charge carrier localization induced by random doping fluctuations likely cause of metallic conduction limits

METHODOLOGY:

• Large-scale atomistic modeling (NEMO)
• Self-consistent TB simulations of bandstructure / density of states (DOS)

RESULTS:

• Successfully modeled disordered nanowires up to 10nm in length
• Observation of DOS energy gap for 10nm wire shows trend towards carrier localization
• Published in PRL 113, 246802, 2014, B. Weber, H. Ryu, Y.-H. M. Tan, et.al.