Amritanshu Palaria

Electronic properties of Si-Ge-Si heterostructures from tight binding

Electronic properties of Si-Ge-Si heterostructures from tight binding Amritanshu Palaria, Alejandro Strachan, Gerhard Klimeck

Objective:

  • Investigate the electronic bandstructure properties of s-Si/s-Ge/s-Si nanowires with major Ge section

Approach:

  • Use realisitc Si-Ge-Si nanowire structures obtained by relaxing with ReaxFF molecular dynamics
  • Model the Ge section of the wires using bulk sp3d5s* tight binding parameters modified for strain in NEMO-3D

Results:

  • The realistically strained Ge section of the heterostructure has a low hole effective mass similar to uniformly uniaxial Ge wire
  • This reduction is higher (upto 60% reduction from biaxial wire) for smaller widths

Impact:

  • Can provide channel material for faster electronics

Powerpoint slide as pdf or as image below.

Amrit Palaria's Pages

Biography Overview (surface and strain effects in nanostructures) Geometry morphology and properties of 1 nm silicon nanowires from DFT and MD Adapting tight binding for non-bulk bonds Electronic properties of Si-Ge-Si heterostructures from tight binding Nano-material tools/ codes on nanoHUB

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