Amritanshu Palaria

Electronic properties of Si-Ge-Si heterostructures from tight binding

Electronic properties of Si-Ge-Si heterostructures from tight binding Amritanshu Palaria, Alejandro Strachan, Gerhard Klimeck

Objective:

  • Investigate the electronic bandstructure properties of s-Si/s-Ge/s-Si nanowires with major Ge section

Approach:

  • Use realisitc Si-Ge-Si nanowire structures obtained by relaxing with ReaxFF molecular dynamics
  • Model the Ge section of the wires using bulk sp3d5s* tight binding parameters modified for strain in NEMO-3D

Results:

  • The realistically strained Ge section of the heterostructure has a low hole effective mass similar to uniformly uniaxial Ge wire
  • This reduction is higher (upto 60% reduction from biaxial wire) for smaller widths

Impact:

  • Can provide channel material for faster electronics

Powerpoint slide as pdf or as image below.