Performance in solid-state light InGaN emitting diodes is limited by the Stark Effect, the self-induced electric field found at the tip of the pyramidal quantum well, which constitutes a potential locus of intense light emission. Compared to traditional thin film structure, the pyramidal nanorod reduces spatial separation of carriers by half. Results demonstrate that for (In,Ga)N systems, with both thin film and pyramidal structure, the distributions
of polarization induced electric fields are determined by the piezoelectric components, while the spontaneous components are relatively uniform. As a result, the relaxation of electric field within the pyramidal quantum well is originated from the spatial variation of the stress components.Geometry-polarization correlations for pyramidal structures are established herein and provide guidance for the fabrication of minimal built-in electric field devices. The effects of nanorod height on the electric field within the pyramidal quantum well is found to be insignificant, while the effects of quantum well thickness, hw, and cladding layer thickness, hc, are directly correlated to the induced spontaneous and piezoelectric polarization. The analysis demonstrates that the thickness ratio, hw/hc, controls the built-in electric field. Finally, an empirical expression of built-in electric field as a function of hc and hw is given for future references.