Group Publications
Books and
Book Chapters
B1.
Sunkook Kim and Saeed
Mohammadi, “Single-Walled
Carbon Nanotube Transistors,” In Nanostructures
in Electronics and Photonics, Pan Stanford Publications, ISBN
978-981-4241-10-6, Apr. 2008. http://www.worldscibooks.com/nanosci/v011.html
B2.
Saeed Mohammadi and
Hasan Sharifi, “Radio Frequency Design, A Practical Perspective,”
Morgan and
Claypool Publishers, to be published in 2010. http://www.morganclaypool.com/toc/mrf/1/1
Journal
Publications
J1.
Laleh Rabieirad,
J2.
Sunkook Kim, Seongmin
Kim, David B Janes, Saeed Mohammadi, Juhee Back and Moonsub Shim, “DC
modeling
and the source of flicker noise in passivated carbon nanotube
transistors,” Nanotechnology,
Vol 21, No. 38, 385203.
J3.
Sunkook Kim, Seongmin
Kim,
J4.
Lin Yu, D. Weon, J.
Kim and Saeed Mohammadi, “Integrated high-inductance three-dimensional
toroidal
inductors,” Journal of Vacuum Science and Technology B:
Microelectronics and
Nanometer Structure, Vol. 28, Issue 5, pp. 903-907, 2010.
J5.
R. A. Sayer. S. Kim,
A.D. Franklin, Saeed Mohammadi and T.S. Fisher, “Shot noise thermometry
for
thermal characterization of templated carbon nanotubes,” IEEE
trans. on Component and Packaging Technologies, vol 33, no 1,
pp. 178-183, Jan 2010.
J6.
R.R. Lahiji, H.
Sharifi, L.P.B. Katehi and Saeed Mohammadi, “3-D CMOS circuits based on
low-loss vertical interconnects on Parylene-N,” IEEE
trans. on Microwave Theory and Techniques, vol 58, no 1, pp.
48-56, Jan 2010
J7.
R. R. Lahiji, L. P. B.
Katehi, S. Mohammadi, “A Wideband CMOS Distributed Amplifier with
Slow-Wave
Shielded Transmission Lines”, to appear in International Journal of
Microwave and Wireless Technology, 2010.
J8.
H. Sharifi, R. Lahiji,
H.C. Lin, P.D. Ye, L.P.B. Katehi and S. Mohammadi “Characterization of
Parylene-N as Flexible Substrate and Passivation Layer for Microwave
and
mm-wave Integrated Circuits,” IEEE trans.
on Advanced Packaging, Vol. 32, No. 1, pp. 84-92, Feb. 2009.
J9.
Teimour Maleki, Saeed
Mohammadi and B. Ziaie, “A nanofluidic channel with embedded transverse
nanoelectrodes,” Nanotechnology, vol
20, no 10, 105302, pp. March 2009.
J10.
Laleh Rabieirad,
J11.
Laleh Rabieirad and
Saeed Mohammadi, “Reconfigurable CMOS tuners for software-defined
radio,” IEEE trans. on Microwave Theory and
Techniques, vol 57, no 11, pp. 2768-2774, Nov 2009.
J12.
J.H. Back, C.L. Tsai,
S. Kim, Saeed Mohammadi and M. Shim, “Manifestation of Kohn anomaly in
1/f
fluctuations in metallic carbon nanotubes,” Phys.
Rev. Lett., 103, 215501, 2009
J13.
S. Ju, S. Kim, Y. Ha,
A. Facchetti, S. Mohammadi, T.J. Marks and D. B. Janes, “Interface
studies of
ZnO nanowire transistors using low-frequency noise and
temperature-dependent
I-V measurements,” Applied Physics
Letters (APL), 92, 022104 (2008).
J14.
W.G. Conley, A. Raman,
C.M. Krousgrill and S. Mohammadi, “Non-linear and non-planar dynamics
of
nanotube and nanowire resonators,” Nano
Letters, 8(6): 1590-5 2008, DOI: 10.1021/nl073406j
J15.
J.H. Back, S. Kim,
J16.
S. Kim, Y. Xuan, P.D.
Ye and S. Mohammadi, “Single-Walled Carbon Nanotube Transistors
Fabricated by
Advanced Alignment Techniques utilizing CVD Growth and
Dielectrophoresis,” Journal of Solid State Electronics,
Vol
52, pp1260-1263, Aug. 2008.
J17.
Sunkook Kim, S. Ju,
J.H. back, Y. Xuan, P. Ye, M. Shim, D.B. Janes and S. Mohammadi, “Fully
transparent thin-film transistors based on aligned carbon nanotube
arrays and
indium tin oxide electrodes,” Advanced Materials, Vol 21, pp. 564-568,
Nov
2008.
J18.
S. Ju, S. Kim, P.
Chen, C. Zhou, Y. Ha, A. Facchetti, T. J. Marks, S. Mohammadi, and D.
B. Janes,
“1/f noise of SnO2 nanowire transistors”, Applied
Physics Letters 9, 243120 (2008)
J19.
H. Sharifi and
J20.
D. Weon, J. Jeon and
S. Mohammadi, “High-Q Micromachined 3-D Integrated Inductors for High
Frequency
Applications,” Journal of Vacuum Science
and Technology B. Volume 25, Issue 1, Jan/Feb 2007.
J21.
D. Weon, J. Kim and S. Mohammadi, “Design of high-Q 3-D
integrated inductors for high frequency applications,” Journal
of Analog Integrated Circuits and Signal Processing, Volume
50, No 2, Feb 2007, pp. 89-93.
J22.
H. Sharifi, T. Choi
and S. Mohammadi, “Self-Aligned Wafer-Level Integration Technology with
High
Density Interconnects and Embedded Passives,” IEEE trans.
on Advanced Packaging, Volume 30, Issue 1, Feb 2007,
pp. 11-18.
J23.
L. Katehi, W.
Chappell, S. Mohammadi, A. Margomenos and M. Steer, “Heterogeneous
Wafer-Scale
Circuit Architectures,” IEEE Microwave
Magazine, Feb 2007, pp. 52-69.
J24.
S. Kim, Y. Xuan, P.D.
Ye,
J25.
H. Sharifi and S.
Mohammadi, “Heterogeneous Integration of 10Gb/s CMOS Optoelectronic
Receivers
using Self-Aligned Wafer-Level Integration Technology,” IEEE
Photonic Technology Letters, Volume 19, Issue 14,
July15, 2007 pp. 1066 - 1068
J26.
H. Lee and
J27.
T. Choi, H. Sharifi,
H.H. Sigmarsson, W.J. Chappell, S. Mohammadi and L.P.B. Katehi, “3-D
Integration of 10GHz Filter and CMOS Receiver Front-End,” IEEE
trans on Microwave Theory and Techniques, Vol 55, Nov. 2007,
pp. 2298-2305.
J28.
H.C. Lin, S. Kim, D.
Chang,
Y. Xuan, S. Mohammadi, P.D. Ye, Y. Xuan, G. Lu, A. Facchetti and T.J.
Marks,
“Direct-current and radio-frequency characterizations of GaAs
metal-insulator-semiconductor field-effect transistors enabled by
self-assembled nanodielectrics,” Applied
Physics Letters (APL), 91, 092103 (2007).
J29.
H.C. Lin, Y. Tang, H.
Sharifi, S.K. Kim, Y. Xuan, T. Shen, S. Mohammadi and P. Ye,
“Enhancement-Mode
GaAs MOS-HEMTs with Atomic layer Deposited High-K gate Dielectrics,” Applied Physics Letters (APL), 91, 212101 (2007).
J30.
Barry Perlman, L.
Katehi, A. Ballato, N. Engheta, D. Peroulis and S. Mohammadi,
“Nanotechnology
and Active Thin Films for Compact RF Components and Agile Systems,”
Proceedings
of Ferroelectronics, Volume 342, May 2006, pp. 163-182.
J31.
R.R. Lahiji, K.J.
Herrick,
Y. Lee; A. Margomenos, S. Mohammadi, L.P.B. Katehi, “Multiwafer
vertical interconnects for three-dimensional integrated circuits,” IEEE trans on Microwave Theory and
Techniques, Volume 54 , Issue: 6 , June 2006
pp. 2699 - 2706.
J32.
K. Lee, S. Mohammadi,
P. Bhattacharya and L.P.B. Katehi, “Compact Models Based on
Transmission-Line
Concept for Integrated capacitors and Inductors,” IEEE Trans on
Microwave Theory and Techniques, Volume 54, Issue
12, Part 1, Dec. 2006, pp. 4141 - 4148.
J33.
K. Lee,
Volume 16, Issue 9, Sept. 2006, pp. 490 – 492.
J34.
W.Y. Liu, J.
Suryanarayanan, J. Nath, S. Mohammadi, L.P.B. Katehi, M.B.
Steer, “Toroidal
inductors for
radio-frequency integrated circuits,” IEEE trans
on
Microwave Theory and Techniques, Volume 52 , Issue: 2
, Feb.
2004 Pages:646 – 654.
J35.
B. S. Makki, M.G.
Fard, S. Mohajerzadeh, T. Maleki, S. Mohammadi, M. Miri and E.
Soleimani, “A
novel ultra-violet assisted anisotropic etching of plastic to realize
micro-gears,” Sensors and Actuators A: Physical, A115 N2-3, 2004, pp.
563-570.
J36.
M.B. Steer, L.P.B.
Katehi, S. Mohammadi, J.F. Whitaker and A.B. Yakovlev, “Architectures
and
Prototyping Laboratory for the Development of Space-Based Microwave
Power
Transmission Systems,” The Radio Science
Bulletin, No 311, Dec. 2004, pp. 7-15
J37.
Yumin Lu, D. Peroulis, S.
Mohammadi, L.P.B. Katehi, “A
MEMS reconfigurable matching network for a class AB amplifier,” IEEE Microwave and Wireless Components Letters,
Volume: 13 , Issue: 10 , Oct. 2003, pp. 437 – 439.
J38.
Z. Ma, S. Mohammadi,
P.K. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz and G.E. Ponchak, “A high power
and high gain X-band Si/SiGe heterojunction bipolar transistors
,” IEEE trans. on Microwave Theory and Techniques, Vol
50, No 4,
April 2002, pp.1101-1108.
J39.
Saeed Mohammadi and D.
Pavlidis, “A
non-fundamental theory of low-frequency noise in semiconductor devices,
” IEEE trans on Electron Devices, vol. 47 no. 11, pp.2009-2017,
Nov.
2000.
J40.
Z. Ma, S. Mohammadi,
P.K. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz and G.E. Ponchak, ”High Power X-band
(8.4 GHz) SiGe/Si
Heterojunction Bipolar Transistor, ” Electronic Letters,
Vol
37 No 12, pp. 790 –791, June 2001.
J41.
J42.
Z. Ma, S. Mohammadi,
L.-H. Lu, P. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz and G.E.
Ponchak, ” An X-Band
High-Power Amplifier Using SiGe/Si HBT and Lumped Passive Components,
” IEEE Microwave and Wireless Components Letters, vol.11, no.
7, pp.
287-289, July 2001.
J43.
Z. Ma, S. Mohammadi,
P. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz, G.E. Ponchak, , K.
Strohm,
J.F. Luy, “Ku-band
(12.6GHz) SiGe/Si high-power heterojunction bipolar transistors,
” Electronic
Letters, Vol. 37, No. 18, pp. 1-2, Aug 2001.
J44.
Saeed Mohammadi, S.M.
Hubbard, C. Chelli, D. Pavlidis and B. Bayraktaroglu,
“Photo-Luminescence and
Transmission Electron Microscope studies of low- and high-reliability
AlGaAs/GaAs HBTs,” J. Solid State Electronics , vol. 44 no. 4,
pp.
739-746, April 2000.
J45.
Saeed Mohammadi, D.
Pavlidis and B. Bayraktaroglu, “Relation between
low-frequency noise
and long-term reliability of AlGaAs/GaAs single power HBTs,
” IEEE
trans. on Electron Devices, vol.47 no. 4, pp. 677-686, Apr. 2000.
J46.
Jae-Woo Park, S.
Mohammadi and D. Pavlidis, “Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au
collector
metal on GaInP/GaAs HBT characteristics,” J. Solid State Electronics,
vol. 44, pp. 1847-1852, 2000.
J47.
J48.
Saeed Mohammadi, J-W.
Park, D. Pavlidis, J.L. Guyaux and J.C. Garcia, “Design
optimization and characterization of high-gain GaInP/GaAs HBT
distributed
amplifiers for high-bit-rate telecommunication, ” IEEE
trans. on
Microwave Theory and Techniques, vol. 48 no. 6, pp. 1038-1044, June
2000.
J49.
J.C. Garcia, C.
Dua, S. Mohammadi, J-W. Park and D. Pavlidis,
“Growth
characterization of hydride-free chemical beam epitaxy and application
to
GaInP/GaAs heterojunction bipolar transistors,” Journal of
Electronic
Material , vol. 27 no. 5, pp. 442-445, May 1998.
J50.
Saeed Mohammadi and
C.R. Selvakumar, “Calculation
of depletion layer thickness by including the mobile carriers,
” IEEE
trans. on Electron Devices, vol. 43 no. 1, pp. 185-188, Jan. 1996.
J51.
Saeed Mohammadi and
C.R. Selvakumar, “Analysis of
BJTs, pseudo-HBTs and HBTs by including the effect of neutral base
recombination, ” IEEE trans. on Electron Devices,
vol. 41 no.
10, pp. 1708-1715, Oct. 1994
Conference
Publications
C1.
Lin Yu, S. Kim and
Saeed Mohammadi, “DC and flicker noise models for passivated
single-walled
carbon nanotube transistors,” Device Research Conference June
2010,
C2.
W. G. Conley, L. Yu,
M. R. Nelis, A. Raman, C. M. Krousgrill, S. Mohammadi, and J. F.
Rhoads, “The
Nonlinear Dynamics of Electrostatically-Actuated, Single-Walled Carbon
Nanotubes,” RASD 2010: The 10th International
Conference on Recent Advances in Structural Dynamics. 2010,
C3.
G. Aroshvili, S.
Mohammadi, D. Pavlidis and B. Bayraktaroglu, “Random and
Dielectrophoresis
Based CNT Technology for FETs,” Workshop on Compound Semiconductor
Devices
and Integrated Circuits (WOCSDICE),
C4.
R. Lahiji, H. Sharifi,
S. Mohammadi and L.P.B. Katehi, “Low loss coplanar waveguide
transmission lines
and vertical interconnects on multi-layer Parylene-N,” IEEE
Si Monolithic Integrated Circuits in RF Systems, San Diego,
CA, pp. 1-4 Jan 2009.
C5.
R. Lahiji, H. Sharifi,
L.P.B. Katehi and S. Mohammadi “Design and implementation of a novel
three
dimensional CMOS low noise amplifier with transmission lines on
parylene-N,” IEEE International Microwave Symposium,
Boston, MA, pp. 589-592, June 2009.
C6.
Laleh Rabieirad and S.
Mohammadi “A dual mode programmable distributed amplifier/mixer,” IEEE International Microwave Symposium,
Boston, MA, pp. 581-584, Jun 2009.
C7.
Sunkook Kim, S. Kim,
M. Xu, L. Yu, P.D. Ye, D. Janes, S. Ju and Saeed Mohammadi,
“Transparent
driving thin-film transistor circuits based on uniformly grown
single-walled
carbon nanotube network,” Device Research
Conference, June 2009, College Station, PA.
C8.
Seongmin Kim, Sunkook
Kim, C. Lee, P. Srisungsitthisunti, P. Chen, C. Zhou, X. Xu, M. Qi,
Saeed
Mohammadi, S. Ju and D.B. Janes, “Femtosecond laser annealing effects
on indium
oxide nanowire transistors,” ISDRS 2009,
College Park, MD, Dec. 2009.
C9.
J. F. Rhoads, W. G.
Conley, A. Raman, C. M. Krousgrill, L. Yu, and S. Mohammadi, “Exploiting
Parametric Effects in Resonant Nanosystems,” The 2009 NSF
Engineering
Research and Innovation Conference, Honolulu, Hawaii 2009.
C10.
H. Sharifi, and S.
Mohammadi, “Substrate Crosstalk Suppression Using Self-Aligned
Wafer-Level
Integration Technology (SAWLIT),” IEEE Si
Monolithic Integrated Circuits in RF Systems, Orlando, FL pp.
147-150, Jan
2008.
C11.
L. Rabieirad and S.
Mohammadi, “A reconfigurable MEMS-less CMOS tuner for software defined
radio,” IEEE International Microwave Symposium,
C12.
S. Mohammadi, L. Yu,
L. Rabieirad, H. Sharifi, “Self-aligned and self-assembled
integration,” International Microelectronics and Packaging
Society Topical Workshop on Military, Aerospace, Space and Homeland
Security
(MASH) Packaging Issues and Applications, Linthicum Heights, MD,
April
2008.
C13.
S. Kim, S. Ju, J.H.
Back, Y. Xuan, P.D. Ye, M. Shim, D.B. Janes and S. Mohammadi “Aligned
single-walled carbon nanotube thin-film transistor arrays for
transparent
electronics,” Device Research Conference,
June 2008, Santa Barbara, CA
C14.
R. R. Lahiji,
C15.
R.A. Sayer, S. Kim,
A.D. Franklin, C. Lan, R.G. Reifenberger, S. Mohammadi and T.S. Fisher,
Measurement of Thermal Resistance by Shot Noise in Carbon Nanotubes,” International Conference of Nanoscience and
Technology (ICN+T 2008), Keystone, Colorado, USA, July 2008.
C16.
D. Weon and S.
Mohammadi, “High Performance 3D Helical RF Transformers,” IEEE
MTT-S International Microwave Symposium (IMS 07), 3-8 June
2007 pp: 1897 – 1900,
C17.
H. Sharifi and S.
Mohammadi, “Heterogeneously Integrated 10Gb/s CMOS Optoelectronic
Receiver,” IEEE Radio Frequency Integrated Circuits
(RFIC 07), 3-5 June 2007 pp. 515 - 518, Hawaii.
C18.
H. Lee and S.
Mohammadi, “A 500uW 2.4GHz CMOS Subthreshold Mixer for Ultra Low Power
Applications,” IEEE Radio Frequency
Integrated Circuits (RFIC 07), 3-5 June 2007 pp:325 – 328,
C19.
S. Kim, D. Chang, Y.
Xuan, P. Ye and S. Mohammadi, “Interface study of single-walled carbon
nanotube
transistors using low-frequency noise,” 65th
Device Research Conference (DRC 07), Notre Dame, IN, June 2007.
C20.
H.C. Lin, T. Yang, H.
Sharifi, S. Kim, Y. Xuan, T. Shen, S.
Mohammadi, P.D. Ye, “Enhancement-mode
GaAs
MOS-HEMTs with ALD Al2O3, HfO2, HfO2/Al2O3
laminate as high-k gate dielectrics”, 38 IEEE
Semiconductor Interface Specialist Conference (SISC 07), Arlington,
VA,
Dec. 2007.
C21.
S. Ju, S. Kim, G. Lu,
A. Facchetti, S. Mohammadi, T.J. Marks and D.B. Janes, “Interface study
of ZnO
nanowire transistors using low-frequency noise and
temperature-dependent I-V
measurements,” Electronic Materials
Conference (EMC 07), Notre Dame, IN, June 2007.
C22.
R. Lahiji, H. Sharifi,
C23.
H.
Lee and S. Mohammadi, “A 3GHz subthreshold
CMOS low noise amplifier,” IEEE Radio Frequency
Integrated Circuits, (RFIC 06),
C24.
L. Rabieirad and
C25.
D.
Weon, L.P.B. Katehi and S. Mohammadi, “3-D
Integrated Inductors and Transformers on Liquid Crystal Polymer
Substrate IEEE MTT-S International
Microwave Symposium (IMS 06), June 2006
Page(s):1381 –
1384
C26.
H. Sharifi,
C27.
Sunkook Kim, T.
Choi, L. Rabieirad, J. Jeon, M. Shim and
Saeed Mohammadi, “A Poly-Si Gate Carbon Nanotube Field Effect
Transistor for
High Frequency Applications,” IEEE MTT-S
International Microwave Symposium (IMS 05), June 12-17, 2005,
Long
Beach CA.
C28.
Dae-Hee Weon, Jeong-Il
Kim, Jong-Hyeok Jeon, Saeed
Mohammadi, and Linda P. B. Katehi, “High Performance 3-D Micro-Machined
Inductors on CMOS Substrate,” IEEE MTT-S
International Microwave Symposium (IMS 05), June 12-17, 2005,
Long
Beach CA.
C29.
Jeong-Il Kim, D. Weon,
J. Jeon,
C30.
L.
Rabieirad, S. Kim, M. Shim,
C31.
S. Kim, C. Wang, M.
Shim and S. Mohammadi, “Comparison of
single-walled carbon nanotube
transistors fabricated by dielectrophoresis and CVD growth,” 5th IEEE Conference on
Nanotechnology (IEEE NANO 05), 11-15 July 2005
Page(s):868
- 871 vol. 2
C32.
K. J. Herrick, A.
Margomenos, R. R. Lahiji, Y. Lee, S. Lardizabal, S. Mohammadi, L. P. B.
Katehi,
G. Jerinic, R. Molfino, “Packaging and Transitions for Intelligent RF
Microsystems”, Government Microcircuit Application and Critical
Technology Conference,
GOMACTech-05, April 2005.
C33.
Kok-Yan
Lee,
C34.
R.R.
Lahiji, K.J. Herrick,
C35.
T. Choi, H. Lee,
L.P.B. Katehi and
C36.
H. Lee, T. Choi,
C37.
D. Weon, Jong-Hyeok Jeon,
Jeong-Il Kim, S. Mohammadi, L.P.B.
Katehi, “High-Q
integrated 3-D inductors
and transformers for high frequency applications,” IEEE
MTT-S International Microwave Symposium (IMS 04),Volume: 2
, June
6-11, 2004, Pages:877 – 880.
C38.
Kok-Yan Lee, B. N
Johnson, S. Mohammadi, P. K. Bhattacharya, L.P.B. Katehi, “High
yield reduced process tolerance self-aligned double mesa process
technology for
SiGe power HBTs, IEEE
MTT-S International Microwave Symposium (IMS 04),Volume: 2
, June
6-11, 2004, Pages: 963 - 966
C39.
D. Peroulis,
C40.
Kok-Yan Lee, B. N
Johnson, S. Mohammadi, P. K. Bhattacharya, L.P.B. Katehi and G.
Ponchak, “An
8.5GHz SiGe-Based Amplifier using Fully Self-Aligned Double Mesa SiGe
HBTs,” Silicon Monolithic Radio Frequency Conference,
Oct 2004, pp. 311-313.
C41.
J. Suryanarayanan,
W.Y. Liu, Saeed Mohammadi, M.B. Steer, L.P.B. Katehi, Toroidal
Inductors for
Integrated Radio Frequency and Microwave Circuits,” IEEE
Radio Frequency Integrated Circuits, (RFIC 03),
Philadelphia, PA, June 2003, pp. 607-610.
C42.
Maleki,.
S. Mohajerzadeh and. S. Mohammadi
"A novel ultra-violet
assisted micromachining of Plastics"
C43.
Jong-Hyeok Jeon,
E.J. Inigo, M.T. Reiha, T. Choi, Y. Lee,
S. Mohammadi, L.P.B. Katehi, “The effect of low-k
dielectrics
on RFIC inductors,” 33rd
European Microwave
Conference,
Volume 1, 7-9 Oct. 2003 Page(s):53 – 56.
C44.
M.T. Reiha, T. Choi,
J. Jeon, S. Mohammadi and L.P.B. Katehi, “High-Q differential
inductors for RFIC design,” 33rd
European Microwave
Conference, Volume 1, 7-9 Oct. 2003 pp:127– 130.
C45.
Saeed Mohammadi, Z.
Ma, J. Park, P. Bhattacharya, L. P. B. Katehi, G. E. Ponchak, S.A.
Alterovitz,
K. M. Strohm, J.-F. Luy, "SiGe/Si Power HBTs
for X- to K-Band
Applications,” IEEE Radio
Frequency Integrated Circuits, (RFIC
02),
C46.
W.Y. Liu. S. Mohammadi,
L.P.B. Katehi, M.B. Steer, “Polymer-membrane-supported
fin-line frequency multipliers,” Radio
and Wireless
Conference, 2002. RAWCON 2002. IEEE , 2002 Page(s): 281 -284.
C47.
Z. Ma; S. Mohammadi,
P. Bhattacharya, L.P.B. Katehi, S.A. Alterovitz, G.E. Ponchak. ,
“An
8.4 GHz SiGe/Si HBT-based
MMIC power amplifier,” Bipolar/BiCMOS
Circuits
and Technology Meeting, 2002.Page(s): 151 -154.
C48.
Z. Ma, S. Mohammadi,
P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, K.
Strohm, J.F.
Luy, “SiGe-Based
HBTs for High-Frequency Microwave Power Amplification,” 2002
Asia
Pacific Microwave Conference,
C49.
W.Y. Liu, Saeed
Mohammadi, L.P.B. Katehi, H. Khalkhali, K. Kurabayashi, “Polymer
micro-heat-pipe for InP/InGaAs technologies,” IEEE
International Symposium on Electron Devices for Microwave and
Optoelectronic Applications (EDMO), 2002. pp. 143 –148.
C50.
W.Y. Liu, Saeed
Mohammadi, L.P.B. Katehi, M.B. Steer “Polymer-membrane-supported
fin-line
frequency multipliers,” IEEE Radio and
Wireless Conference (RAWCON) 2002. pp. 281 –284.
C51.
L-H. Lu, S. Mohammadi,
G.E. Ponchak, P.K. Bhattacharya and L.P.B. Katehi, “Design and
implementation of micromachined lumped quadrature (90o) hybrids,
” IEEE MTT-S International Microwave Symposium
(IMS 01),
C52.
L-H. Lu, S. Mohammadi,
Z. Ma, G.E. Ponchak, S.A. Alterovitz, K.M. Strohm, J.F. Luy, P.K.
Bhattacharya
and L.P.B. Katehi, “Power SiGe
heterojunction bipolar transistors (HBTs) fabricated by fully
self-aligned
double mesa technology, ” IEEE
MTT-S International Microwave Symposium (IMS 01) , Phoenix, AZ, May
2001.
C53.
Z. Ma, S. Mohammadi,
P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, K.
Strohm, J.F.
Luy, “Si/SiGe Power Heterojunction Bipolar Transistors for Ku-Band
Applications,” Late news paper in 59th
Device Research Conference (DRC 01), Notre Dame, IN, June 2001.
C54.
Z. Ma, S. Mohammadi,
P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, K.
Strohm, J.F.
Luy, “A 180mW 18GHz Si/SiGe power heterojunction bipolar transistor,”
IEEE
Topical Workshop on Power Amplifiers for Wireless Communications, Sand
Diego,
CA, Sep 2001.
C55.
Z. Ma, S. Mohammadi,
P. Bhattacharya, L.P.B. Katehi, G.E. Ponchak, S.A. Alterovitz, “Power
Performance of X-Band Si/SiGe/Si HBTs, ” Silicon
Monolithic Integrated Circuits in RF Systems, Ann Arbor,
MI, pp. 170-176, Sep. 2001.
C56.
Saeed Mohammadi, L-H.
Lu, Z. Ma, L.P.B. Katehi, P.K. Bhattacharya, G.E. Ponchak and E.T.
Croke,
“Microwave Noise of Si/Si0.6Ge0.4 Heterojunction Bipolar Transistors,” Silicon Monolithic Integrated Circuits in RF
Systems, pp. 15-18, April 2000.
C57.
J-W. Park, D. Pavlidis,
S. Mohammadi, J.L. Guyaux and J-C. Garcia, “Material and
processing technology for manufacturing of high speed, high reliability
GaInP/GaAs HBT based ICs,” International
Conference on GaAs Manufacturing Technology (MANTECH), Vancouver,
BC,
Canada, PP. 173-176, May 1999.
C58.
Saeed Mohammadi, J-W.
Park, D. Pavlidis, C. Dua, J.L. Guyaux and J.C. Garcia, “Optimal design and
experimental
characterization of high-gain HBT distributed amplifiers, ” IEEE
MTT-S International Microwave Symposium (IMS 99), Anaheim, CA, v.
2, pp.
685-688, June 13-19, 1999.
C59.
D. Sawdai, D.
Pavlidis, S. Mohammadi, “Power amplification using NPN and PNP InP HBTs
and
application to push-pull circuits,” 22nd Workshop on Compound
Semiconductor
Devices and Integrated Circuits (WOCSDICE 98), Zeuthen, Germany, pp.
45-46, May
24-27, 1998.
C60.
J-W. Park, S.
Mohammadi, D. Pavlidis, “GaInP/GaAs HBT technology using TBA, TBP
precursors
and application to optoelectronic circuits,” 22nd Workshop on Compound
Semiconductor Devices and Integrated Circuits (WOCSDICE 98), Zeuthen,
Germany,
pp. 33-34, May 24-27, 1998.
C61.
Jae-Woo Park, Saeed
Mohammadi, D. Pavlidis, C. Dua, J.L. Guyaux and J.C. Garcia, “GaInP/GaAs
HBT broadband monolithic transimpedance amplifiers and their high
frequency
small and large signal characteristics, ” IEEE
MTT-S International Microwave Symposium Digest, IEEE Radio
Frequency Integrated Circuits, (RFIC 98), Baltimore, MD, Vol. 1,
pp. 39-42,
June 7-9, 1998.
C62.
Saeed Mohammadi, J-W.
Park, D.Pavlidis, C. Dua, J.L. Guyaux and J.C. Garcia, “High-gain GaInP/GaAs
HBT monolithic
transimpedance amplifier for high-speed optoelectronic receivers,
” International
Electron Device Meeting (IEDM 98),
C63.
Saeed Mohammadi, D.
Pavlidis and B. Bayraktaroglu, “A novel approach for determining
reliability of
AlGaAs/GaAs single HBTs from low-frequency noise characteristics,” Workshop
on Compound Semiconductor Devices and Integrated Circuits
(WOCSDICE),
Scheveningen, The Netherlands, May 1997.
C64.
Jae-Woo Park, D.
Pavlidis, S. Mohammadi, C. Dua and J.C. Garcia, “Improved high
frequency performance by composite emitter AlGaAs/GaInP heterojunction
bipolar
transistors fabricated using chemical beam epitaxy,” Proceedings of the 24th International
Symposium on Compound Semiconductors (ISCS 97), San Diego, CA, pp.
439-442,
September 7-11, 1997.
C65.
Saeed Mohammadi, D.
Pavlidis and B. Bayraktaroglu, “ Low-frequency noise
characterization
of high- and low-reliability AlGaAs/GaAs HBTs,” Proceedings
of
the 24th International Symp. on Compound Semiconductors (ISCS
97),
C66.
B. Bayraktaroglu, G.
Dix, S. Mohammadi and D. Pavlidis, “AlGaAs/GaAs
HBT reliability: dependence on material and correlation to baseband
noise,”
GaAs IC Symposium Technical Digest 1997,
C67.
J-C. Garcia, C. Dua,
S. Mohammadi and D. Pavlidis, “Hydride-free chemical beam epitaxy
processes and
application to GaInP/GaAs heterojunction bipolar transistors,” 38th Electronic Material Conference,