End of SIA Roadmap Problems
Dopant Fluctuations in Ultra-Scaled CMOS
Electron Transport in Exotic Dielectrics
Our choice of a localized orbital basis allows for a natural extension to the simulation of transport through arbitrary crystal structures. These atomistic simulation capabilities should prove useful to scientists attempting to push CMOS beyond the SIA roadmap. The atomistic nature of impurites becomes important for short gate length devices (L<40nm).
The discrete. distributed impurity figure is taken from the work of Asen Asenov at the University of Glasgow, Scotland.