Tunnel FETs

Band-To-Band-Tunneling in InAs Devices Charge Self-consistent Full-Band Transport in Realistic Structure

Objective:

  • Demonstrate BTBT capability

Approach:

  • Full BTBT current-voltage with full charge selfconsistency

 

Result:

  • First full band / atomistic charge-self-consistent BTBT simulation
  • Full ambipolar carrier treatment

InGaAs Band-to-band Tunneling (BTBT) Diodes

Objective:

  • Investigate the performances of homogeneous InGaAs III-V band-to-band-tunneling (BTBT) diodes
  • Study the tunneling properties of a given material and its potential as a BTBT Field-Effect Transistors (TFETs)

Result:

  • First full band / atomistic charge-self-consistent BTBT simulation
  • Full ambipolar carrier treatment

Approach:

  • Use full-band and atomistic quantum transport solver based on tight-binding to simulate BTBT diodes
  • Coherent tunneling (no e-ph)
  • Compare the simulation results to experimental data from Penn State and Notre Dame

Penn State University

Notre Dame University

Group member involved:

Ultra-Scaled FETs

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