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Motivation:
- To have TB parameters for strained materials are critical for device level simulations(strain always exists).
Approach:
- sp3d5s* TB model.
- TB parameters are obtained by ab-initio mapping
- environment dependent TB model for strained materials
Results:
- TB band edges match hybrid functional results for strained materials.
Impact:
- Strain model is obtained for arbitrarily strained III-V and group IV materials
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