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Objective:
- Obtain energy levels and valley-splitting trends of strained Si quantum dots embedded in Si0.75Ge0.25 for dimensions relevant to qubit implementation
Approach:
- Use NEMO 3-D
- Strain Relaxation with VFF model
- Incorporate different levels/ orientations of buffer disorder
- Typical dimensions: Lx=25nm, Ly=20 nm, Lz ~10nm. 80nm3 buffer
Results
- Valley splitting depends on the wavefunction fraction penetrating into the buffer
- Valley splitting is suppressed as buffer disorder increases
- Valley splitting is unaffected by strain
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Impact/Insights:
- Atomistic Approach is Essential
- Comprehensive study of Si-QDs that provide a reliable benchmark to experimentalists
Publication
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