Journals (43)
"High-Performance Complementary III-V Tunnel FETs with Strain Engineering"
arXiv:1605.009552016Not Cited Yet
0
0
"NEMO5: Achieving High-end Internode Communication for Performance Projection Beyond Moore's Law"
arXiv:1510.046862015Not Cited Yet
0
0
"Doping Profile Engineered Triple Heterojunction TFETs With 12-nm Body Thickness"
IEEE Transactions on Electron Devices, June 2021, Vol. 68, No. 6, Pages 3104-3111;doi: 10.1109/TED.2021.30751902021Not Cited Yet
0
0
"Superior Performance of 5-nm Gate Length GaN Nanowire nFET for Digital Logic Applications"
IEEE Electron Device Letters, Volume: 40, Issue: 6, Pages: 874 - 877, June 2019;doi:10.1109/LED.2019.28944162019Not Cited Yet
0
0
"Theoretical study of strain-dependent optical absorption in doped Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots"
Beilstein Journal of Nanotechnology, 2018, 9, 1075–1084;doi:10.3762/bjnano.9.992018Not Cited Yet
0
0
"Grain-Boundary Resistance in Copper Interconnects: From an Atomistic Model to a Neural Network"
Physical Review Applied 9 (4), 044005;doi: 10.1103/PhysRevApplied.9.0440052018Not Cited Yet
0
0
"Optimization of edge state velocity in the integer quantum Hall regime"
Physical Review B 97, 085302 (2018);doi: 10.1103/PhysRevB.97.0853022018Not Cited Yet
0
0
"Robust Mode Space Approach for Atomistic Modeling of Realistically Large Nanowire Transistors"
Journal of Applied Physics 123, 044303 (2018);doi:10.1063/1.50102382018Not Cited Yet
0
0
"Atomistic tight-binding study of contact resistivity in Si/SiGe PMOS Schottky contacts"
IEEE Transactions on Electron Devices, 2018 (Early Access), Pages 1-12018Not Cited Yet
0
0
"Atomistic Modeling trap-assisted tunneling in hole tunnel FETs"
Journal of Applied Physics 123 (2018);doi: 10.1063/1.50187372018Not Cited Yet
0
0
"Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions"
IEEE Transactions on Electron Devices, Vol: 64, Issue: 6, Page(s): 2512 - 2518, June 2017;doi:10.1109/TED.2017.26906262017Not Cited Yet
0
0
"A Multiscale Modeling of Triple-Heterojunction Tunneling FETs"
IEEE Transactions on Electron Devices, Volume: 64, Issue: 6, Pages: 2728 - 2735, June 2017;doi:10.1109/TED.2017.26906692017Not Cited Yet
0
0
"Control of interlayer delocalization in 2H transition metal dichalcogenides"
Journal of Applied Physics 122, 224302 (2017);doi:10.1063/1.50059582017Not Cited Yet
0
0
"High-Current Tunneling FETs With ( 1\bar {1}0 ) Orientation and a Channel Heterojunction"
IEEE Electron Device Letters, Volume:37 , Issue: 3, Page(s): 345 - 348, March 2016;doi:10.1109/LED.2016.25232692016Not Cited Yet
0
0
"Unfolding and effective bandstructure calculations as discrete real-and reciprocal-space operations"
Physica B: Condensed Matter, Volume 491, 15 June 2016, Pages 22–30;doi:10.1016/j.physb.2016.03.0112016Not Cited Yet
0
0
"Performance degradation of superlattice MOSFETs due to scattering in the contacts"
Journal of Applied Physics, Vol 120, 224501, December 2016;doi: 10.1063/1.49713412016Not Cited Yet
0
0
"Incoherent transport in NEMO5: realistic and efficient scattering on phonons"
Journal of Computational Electronics, pp 1–7, 2016;doi:10.1007/s10825-016-0845-y2016Not Cited Yet
0
0
"Scalable GaSb/InAs tunnel FETs with non-uniform body thickness"
IEEE Transactions on Electron Devices, Volume: 64, Issue: 1, Pages: 96 - 101, Jan. 2017;doi: 10.1109/TED.2016.26247442016Not Cited Yet
0
0
"P-Type Tunnel FETs With Triple Heterojunctions"
IEEE Journal of the Electron Devices Society, Volume: 4, Issue: 6, Page(s): 410 - 415, Nov. 2016;doi:10.1109/JEDS.2016.26149152016Not Cited Yet
0
0
"Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs"
IEEE ELECTRON DEVICE LETTERS, VOL: 37, Issue: 1, Pages: 107 - 110, JANUARY 2016;doi:10.1109/LED.2015.24976662016Not Cited Yet
0
0
"Surface Passivation in Empirical Tight Binding"
IEEE TRANSACTIONS ON ELECTRON DEVICES VOL. 63, Issue: 3, Page(s): 954 - 958, February (2016);doi:10.1109/TED.2016.25190422016Not Cited Yet
0
0
"Transferable tight-binding model for strained group IV and III-V materials and heterostructures"
PHYSICAL REVIEW B 94, 045311 (2016), published 21 July 2016;doi:10.1103/PhysRevB.94.0453112016Not Cited Yet
0
0
"Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 62, Issue: 8, Page(s): 2445 - 2449, AUGUST 2015;doi: 10.1109/TED.2015.24435642016Not Cited Yet
0
0
"Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots"
arXiv:1502.077262015Not Cited Yet
0
0
"Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations"
J. Appl. Phys. 117, 174312 (2015);doi:10.1063/1.49190912015Not Cited Yet
0
0
"Tunneling and Short Channel Effects in Ultrascaled InGaAs Double Gate MOSFETs"
IEEE Transactions on Electron Devices, Volume:62, Issue: 2, Page(s): 525 - 531, Feb. 2015;doi:10.1109/TED.2014.238339220150
2
"Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution"
Phys. Rev. B 92, 085301 – Published 4 August 2015;doi:10.1103/PhysRevB.92.0853012015Not Cited Yet
0
0
"An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation"
JOURNAL OF APPLIED PHYSICS 115, 123703 (2014), published online 25 March 2014;doi: 10.1063/1.486897720140
4
"An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures II - Effect of Confinement and Homogeneous Strain on Cu Conductance"
J. Appl. Phys. 115, 123703 (2014);doi: 10.1063/1.48689772014Not Cited Yet
0
0
"Design and Simulation of Two-dimensional Superlattice Steep Transistors"
IEEE ELECTRON DEVICE LETTERS., vol. 35, Issue: 12, Page(s): 1212 - 1214, Dec. 2014;doi:10.1109/LED.2014.236459320140
2
"Anisotropic strain in SmSe and SmTe: Implications for electronic transport"
Phys. Rev. B 90, 245124, Published 15 December 2014;doi:10.1103/PhysRevB.90.24512420140
1
"Brillouin zone unfolding method for effective phonon spectra"
Physical Review B 90, 205214 (2014);doi:10.1103/PhysRevB.90.20521420140
1
"Atomistic simulation of phonon and alloy limited hole mobility in Si1-xGex nanowires"
Phys. Status Solidi RRL 7, No. 10, 903–906 (2013) 20130
3
"Electron transport in nano-scaled piezoelectronic devices"
Appl. Phys. Lett. 102, 193501 (2013);doi:10.1063/1.480460120130
8
"Engineering Nanowire n-MOSFETs at Lg < 8nm"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 60, Issue: 7, Page(s): 2171 - 2177, July 2013;doi: 10.1109/TED.2013.22638062013Not Cited Yet
0
0
"Simulation Study of Thin-Body Ballistic n-MOSFET Involving Transport in Mixed Γ-L valleys"
IEEE Electron Device Letters, vol.34, Issue: 9, Page(s): 1196 - 1198, Sept. 2013;doi: 10.1109/LED.2013.22730722013Not Cited Yet
0
0
"Efficient and realistic device modeling from atomic detail to the nanoscale"
Journal of Computational Electronics December 2013, Volume 12, Issue 4, pp 592-600;doi:10.1007/s10825-013-0509-020130
21
"Design principles for HgTe based topological insulator devices"
Published online 22 July, J. Appl. Phys. 114, 043702 (2013);doi: 10.1063/1.481387720130
6
"Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping"
Journal of Computational Electronics, January 2013;doi:10.1007/s10825-013-0436-020130
10
"Does the low hole transport mass in <110> and <111> Si nanowires lead to mobility enhancements at high field and stress: a self-consistent tight-binding study"
Journal of Applied Physics Vol.111, Issue 12 published online 26 June 2012;doi: 10.1063/1.472980620110
6
"Enhanced valence force field model for the lattice properties of gallium arsenide"
Physical Review B, Vol. 84, pg. 155204, Published 17 October 2011;doi :10.1103/PhysRevB.84.1552042011Cited by 8 / 17 Downloads
17
8
"NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool"
IEEE Transactions on Nanotechnology, Vol. 10, Issue: 6, Page(s): 1464 - 1474, Nov. 2011;doi:10.1109/TNANO.2011.21661642011Cited by 52 / 12 Downloads
12
52
"Adaptive quadrature for sharply spiked integrands"
Journal of Computation Electronics vol 9 , No. 3-4, 252-255 (2010);doi : 10.1007/s10825-010-0338-32010Cited by 1 / 32 Downloads
32
1
Proceedings (27)
"Surface and grain boundary effects on copper interconnects thin films modeling with an atomistic basis"
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices, September 24-26, 2018, Austin, TX2018Not Cited Yet
0
0
"Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations: Can we achieve the 10−9Ω·cm? target?"
Proceedings of the 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), Pages 83-842017Not Cited Yet
0
0
"Sb- and Al-free ultra-high-current tunnel FET designs"
Proceedings of the 2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S), Pages 1-32017Not Cited Yet
0
0
"A high-current InP-channel triple heterojunction tunnel transistor design "
Proceedings of the 75th Device Research Conference (DRC), University of Notre Dame (Indiana, USA) from June 25-28, 2017;doi:10.1109/DRC.2017.79994372017Not Cited Yet
0
0
"NEMO5: Predicting MoS2 Heterojunctions"
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);doi: 10.1109/SISPAD.2016.76051872016Not Cited Yet
0
0
"Grain boundary resistance in nanoscale copper interconnections"
Simulation of Semiconductor Processes and Devices (SISPAD), 20162016Not Cited Yet
0
0
"A Tunnel FET Design for High-Current, 120 mV Operation"
2016 IEEE International Electron Devices Meeting, December 3-7, 2016, San Francisco, CA;doi:10.1109/IEDM.2016.78385112016Not Cited Yet
0
0
"Exploring Channel Doping Designs for High-Performance Tunneling FETs"
Device Research Conference (DRC), June, 2016, Newark, Delaware, USA;doi:10.1109/DRC.2016.75484562016Not Cited Yet
0
0
"Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors"
Device Research Conference (DRC), June, 2016, Newark, Delaware, USA;doi:10.1109/DRC.2016.75484242016Not Cited Yet
0
0
"High-Current InP-Based Triple Heterojunction Tunnel Transistors"
28th International Conference on Indium Phosphide and Related Materials (IPRM), June, 2016, Toyama, Japan;doi:10.1109/ICIPRM.2016.75285922016Not Cited Yet
0
0
"Record-Performance Thermally-Limited Devices, Prospects for High-On-Current Steep Subthreshold Swing Devices"
2015 Conference on Indium Phosphide and Related Matrerials, June 8-July 2, Santa Barbara, CA2015Not Cited Yet
0
0
"Mode space tight binding model for ultra-fast simulations of III-V nanowire MOSFETs and heterojunction TFETs"
International Workshop on Computational Electronics (IWCE 2015) September 2, 2015 West Lafayette, Indiana USA, Page(s): 1 - 3;doi:10.1109/IWCE.2015.73019342015Not Cited Yet
0
0
"Comparison of Ultra-Thin InAs and InGaAs Quantum Wells and Ultra-Thin-Body Surface-Channel MOSFETs"
27th International Conference on Indium Phosphide and Related Materials, June 28-July 2, 2015 University of California Santa Barbara, CA, USA2015Not Cited Yet
0
0
"Transistors for VLSI, for Wireless: A View Forwards Through Fog"
73rd Device Research Conference (DRC), Ohio State University,June 21-24, 20152015Not Cited Yet
0
0
"Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors"
2014 IEEE Silicon Nanoelectronics Workshop (SNW), 8-9 June 2014, Honolulu, HI, Page(s): 1 - 2;doi:10.1109/SNW.2014.73486062014Not Cited Yet
0
0
"Quantum Transport in NEMO5: Algorithm Improvements and High Performance Implementation"
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan, September 9-11, 2014, Page(s): 361 - 364;doi:10.1109/SISPAD.2014.69316382014Not Cited Yet
0
0
"Tight Binding analysis of Si/GaAs UTBs with subatomic resolution"
17th International Workshop on Computational Electronics (IWCE), Paris, France, 20142014Not Cited Yet
0
0
"Atomistic Tight Binding Simulations with Real Space Basis Functions: Optical Properties of Quantum Wells and Dots"
IWCE 2014, June 3-6, Paris, France2014Not Cited Yet
0
0
"Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots"
14th IEEE International Conference on Nanotechnology, 18-21 Aug. 2014, Page(s): 921 - 924, Toronto, ON;doi: 10.1109/NANO.2014.69681372014Not Cited Yet
0
0
"Thermal transport in topological insulator nanowires"
Techon Sept 10-11, 2013. Austin2013Not Cited Yet
0
0
"Topological insulator states in a broken-gap GaN/InN/GaN system heterojunction"
International Conference on Nitride Semiconductors. Aug 25 -30, 2013. Washington D.C2013Not Cited Yet
0
0
"Scaling Effect on Specific Contact Resistivity in Nanoscale Metal-Semiconductor Contacts"
Device Research Conference (DRC), University of Notre Dame, IN, June 23-26, 2013, Page(s): 125 - 126, and International Workshop on Computational Electronics (IWCE), Nara, Japan, June 4-7, 2013;doi: 10.1109/DRC.2013.66338252013Not Cited Yet
0
0
"Effect of Fin Tapering in Nanoscale Si FinFETs"
16th International Workshop on Computational Electronics, Nara, Japan June 4-7, 20132013Not Cited Yet
0
0
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
IEEE SISPAD 2012, pg: 388-391, International Conference on Simulation of Semiconductor Processes and Devices, Denver, CO, Sept. 201220120
1
"The Nanoelectronic Modeling Tool NEMO 5: Capabilities, Validation, and Application to Sb-Heterostructures"
proceedings of the IEEE Device Research Conference (DRC), June 20-22 2011;doi:10.1109/DRC.2011.599440420110
1
"Tunability of the critical width of a 2D Topological Insulator"
Presented at MRS Fall Meeting 2011, SYMPOSIUM L, Boston, MA2011Not Cited Yet
0
0
"Contact Modeling and Analysis of InAs HEMT Transistors"
IEEE proceedings of IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2011), Oct. 18-21, 2011 at The Shilla Jeju, Korea2011Cited by 1 / 26 Downloads
26
1
Conferences (67)
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Institute of Science and Technology (KIST), Seoul, July 9 2018, Host. Dr. Kwang-Reol Lee20180
0
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, July 6 2018, Host Prof. Mincheol Shin20180
0
"Surface and grain boundary effects on copper interconnects thin films modeling with an atomistic basis"
International Conference on Simulation of Semiconductor Processes and Devices, September 24-26, 2018, Austin, TX20180
0
"Sb- and Al- Free Ultra-High-Current Tunnel FET Design"
Fifth Berkeley Symposium on Energy Efficient Electronic Systems and Steep Transistors Workshop October 19-20, 2017 University of California, Berkeley, California, USA20170
0
"Electrostatic and Quantum Transport Simulations of Quantum Point Contacts in the Integer Quantum Hall Regime"
APS March Meeting 2017 Volume 62, March 13–17, 2017, New Orleans, Louisiana20170
0
"Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations: Can we achieve the 10−9Ω·cm? target?"
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), Pittsburgh, PA, July 25-28, 201720170
0
"Sb- and Al-free ultra-high-current tunnel FET designs"
2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S), Berkeley, California, October 19-20, 201720170
0
"A high-current InP-channel triple heterojunction tunnel transistor design"
75th Device Research Conference (DRC), University of Notre Dame (Indiana, USA) from June 25-28, 201720170
0
"Stark effect in the photoluminescence of transition metal dichalcogenide structures"
International Workshop on Computational Nanotechnology (IWCN), Leeds, United Kingdom, 5-9 June, 2017 20170
0
"Nonequilibrium Green's function method: Performance prediction of band-to-band tunneling devices in electron-only representation"
International Workshop on Computational Nanotechnology (IWCN), Leeds, United Kingdom, 5-9 June, 2017 20170
0
"Post-Moore Nanoscale Logic Devices"
ALCF Aurora Early Science Program, 201620160
0
"Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors"
Device Research Conference (DRC), June, 2016, Newark, Delaware, USA20160
0
"Exploring Channel Doping Designs for High-Performance Tunneling FETs"
Device Research Conference (DRC), June, 2016, Newark, Delaware, USA20160
0
"The Influence Of Carrier Thermalization On The Performance Of Nitride Tunneling Hetero-Structures"
TECH CON 2016, Sept. 11 - Tuesday, Sept. 13, 2016, Renaissance Austin Hotel, Austin, TX, United States20160
0
"NEMO5: Predicting MoS2 Heterojunctions"
International Conference on Simulation of Semiconductor Processes and Devices 2016, Nuremberg, Germany, September 6-820160
0
"Grain Boundary Resistance in Nanoscale Copper Interconnections"
International Conference on Simulation of Semiconductor Processes and Devices 2016, Nuremberg, Germany, September 6-820160
0
"A Tunnel FET Design for High-Current, 120 mV Operation"
IEEE International Electron Devices Meeting, December 3-7, 2016, San Francisco20160
0
"Multiscale Transport Simulation of Nanoelectronic Devices with NEMO5"
Progress In Electromagnetics Research Symposium (PIERS), August, 2016, Shanghai, China20160
0
"Computational Study of Strain-Engineered III-V Tunneling Transistors"
Progress In Electromagnetics Research Symposium (PIERS), August, 2016, Shanghai, China20160
0
"High-Current InP-Based Triple Heterojunction Tunnel Transistors"
28th International Conference on Indium Phosphide and Related Materials (IPRM), June, 2016, Toyama, Japan20160
0
"STEEP Transistor Modeling with NEMO5"
Steep Transistors Workshop, University of Notre Dame, Notre Dame, IN, October 5-6, 201520150
0
"Transistors for VLSI, for Wireless: A View Forwards Through Fog"
73rd Device Research Conference (DRC), Ohio State University,June 21-24, 201520150
0
"Development of the NEMO Tool Suite From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Arizona State, Electrical Engineering Advanced Semiconductor Device Class, Host: Prof. Dragica Vasileska, April 20, 201520150
0
"Numerical Integral Eigensolver for a Ring Region on the Complex Plane"
Presented at the International Workshop on Eigenvalue Problems: Algorithms; Software and Applications, in Petascale Computing20150
0
"Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels"
IWCE 201520150
0
"Multi-Scale Quantum Simulations of Conductive Bridging RAM"
Oral presentation, 18th International Workshop on Computational Electronics, West Lafayette, Indiana, September 2-4, 201520150
0
"Transferable tight binding model for strained group IV and III-V heterostructure"
International Workshop on Computational Electronics (IWCE), West lafayette, USA, 201520150
0
"A parallel eigensolver using numerical quadrature for annular regions"
International Workshop on Eigenvalue Problems: Algorithms; Software and Applications (EPASA 2015), in Petascale Computing, September 14-16, 2015, Tsukuba International Congress Center EPOCHAL TSUKUBA, Tsukuba, Ibaraki, Japan20150
0
"Topological Insulator Modeling within Atomistic Nanoelectronic Modeling"
NEMO Representations, Workshop on the modeling of Topological Insulators and Majorana Systems, Delft Technical University, Sept 22-23, 201420140
0
"Transport properties of 2D material transistors"
17th International Workshop on Computational Electronics (IWCE), Paris, France, 201420140
0
"Transport Properties of 2D Material Transistors"
TECHON 2014, October 1-3, 2014, Santa Clara, CA20140
0
"Atomistic Simulation of Steep Subthreshold Slope Bi-layer MoS2 Transistors"
Poster Session, 2014 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI USA June 8-9, 201420140
0
"Optimization of the Anharmonic Strain Model to Capture Realistic Strain Distributions in Quantum Dots"
IEEE Nano, Toronto, 201420140
0
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
Synopsys, Oct 18, 2013, Host: Dr. Victor Moroz20130
0
"Development of the NEMO Tool Suite From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Embedded tutorial on FinFET: A Multifaceted Perspective for CAD Engineers , International Conference on Computer Aided Design, Nov 18-21, 2013, San Jose, CA20130
0
"Taking Nanoelectronics to the Next Level Through NEMO and nanoHUB.org"
CMSI International Symposium 2013: Extending the power of computational materials sciences with K-computer, Tokyo, Japan, Oct 21 -22, 2013 20130
0
"Tight-Binding Modeling of Intermediate Valence Compound SmSe for Piezoelectronic Devices"
16th International Workshop on Computational Electronics (IWCE), June 2013, Nara, Japan20130
0
"Atomistic Modeling of CBRAM Switching Behavior"
2013 FAME (Function Accelerated nanoMaterial Engineering) Annual Review, poster presentation, Oct. 15 & 16, 2013, Los Angeles, CA20130
0
"Spin-dependent Peltier effect in 3D topological insulators"
Accepted for presentation at 2013 APS March meeting, Baltimore MD20130
0
"Electric tuning of topological insulator states and their surface scattering"
APS March Meeting 2012, Boston, US20120
0
"Atomistic simulation of electronic and transport properties of topological insulator based devices"
TECHCON, September 10-11 2012, Austin TX20120
0
"Geometric effects on surface states in topological insulator Bi_{2}Te_{3 } nanowire"
APS March Meeting 2012, Boston, US20120
0
"Atomistic Simulation of current-voltage characteristics of topological insulator Bi2Te3 ultra-thin bodies"
TECHCON, September 10-11 2012, Austin, TX20120
0
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
SISPAD 2012, International Conference on Simulation of Semiconductor Processes and Devices, Denver, CO, Sept. 201220120
0
"Quantum Transport in Tunneling Field Effect Transistors"
MIND review, student poster, South Bend, IN, Aug. 201220120
0
"Atomistic Simulation of GaSb/InAs Tunneling Field Effect Transistor"
TECHCON ,September 10-11 2012, Austin TX20120
0
"Crystal Viewer Tool v2.0 Using NEMO5"
Purdue Summer Undergraduate Research Fellowship 2012 Research Symposium, 1 Aug. 201220120
0
"Geometric effects on surface states of Bismuth Telluride nanowires"
submitted to APS March Meeting, Feb 27 - Mar 2 2012, Boston, MA20120
0
"Design of high-current L-valley GaAs/AlAs0:56Sb0:44/InP (111) ultra-thin-body nMOSFETs"
International Conference on Indium Phosphide and Related Materials, University of California at Santa Barbara, Aug 27-30 201220120
0
"Modelling of Ge/InGaAs FinFETs"
MSD Annual Review , MIT (Boston) MA, May 1-2 201220120
0
"MOSFETs near end of the roadmap "
MSD Annual Review , MIT (Boston) MA, May 1-2 2012 20120
0
"Generation of Empirical Tight Binding Parameters from ab-initio simulations"
IWCE 2012, May 21-22, 2012, University of Wisconsin - Madison20120
0
"Efficient solution algorithm of non-equilibrium Green's functions in atomistic tight binding representation"
IWCE 2012, May 21-22, 2012, University of Wisconsin - Madison20120
0
"From Atoms to Devices: NEMO5"
Focus Center Research Program (FCRP) Proposers’ Conference, Dallas, TX May, 2012. 20120
0
"Contact-to-channel Resistance Modeling in HEMT Devices"
MSD review May 2012, Boston. 20120
0
"Double Gate Ge p-FinFET Performance: Dependence on Orientation, Strain and Fin Width Thickness"
TECHCON 2012, Austin TX,Sept 10-11 201220120
0
"Geometric effects on surface states of 3D-TI Bismuth Telluride quantum wells"
APS March Meeting,Feb 27th - March 2nd, 201220120
0
"Quantum Transport in GaSb/InAs Nanowire TFET with Semiclassical Charge Density"
IWCE 2012, May 21-22, 2012, University of Wisconsin - Madison20120
0
"Full band electron band structure calculation with empirical tight binding for topological insulators and broken gap devices"
IWCE 2012, May 21-22, 2012, University of Wisconsin - Madison20120
0
"The Nanoelectronic Modeling Tool NEMO 5: Capabilities, Validation, and Application to Advanced Transistor Structures"
MSD/FENA Teleseminar Series, Dec. 15 2011.20110
0
"High Performance Computational Nanotechnology for Research and Education on nanoHUB.org"
TeraGrid Conference, July 18-22, 2011, Salt Lake City.20110
0
"The Nanoelectronic Modeling Tool NEMO5: Capabilities, Validation, and Application to Sb-Heterostructures"
Device Research Conference (DRC) 2011, Santa Barbara CA20110
0
"Topological Insulator Application: All-Electrical Switching of Conductance"
Presented at MRS Fall Meeting 2011, Boston, MA20110
0
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Denver, August 11-12, 201120110
0
"Tunability of the critical width of a 2D Topological Insulator"
Presented at MRS Fall Meeting 2011, SYMPOSIUM L, Boston, MA20110
0
"Contact Modeling and Analysis of InAs HEMT Transistors"
IEEE proceedings of IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2011), Oct. 18-21, 2011 at The Shilla Jeju, Korea20110
0
Others (6)
"Quantum Transport Simulation of III-V TFETs with Reduced-Order k⋅p Method"
Chapter: 6, Springer International Publishing , ISBN:978-3-319-31651-2 (print) 978-3-319-31653-6 (online), 20160
0
"Advanced Quantum Device Simulation using NEMO5"
Semiconductor Research Corporation Review, Santa Barbara, CA, April 8 - 11, 201320130
0
"Quantum Transport in Tunneling Field Effect Transistors"
Nanoelectronic Research Initiative (NRI) review, MIND center (Midwest Institute for Nanoelectronics Discovery), Notre Dame, Aug. 15, 201220120
0
"Advanced Simulations of Nanoelectronic Devices with NEMO5"
Semiconductor Research Corporation Review, Santa Barbara, Ca, April, 201220120
0
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Denver, August 16-17, 201120110
0
"Nanoelectronic Modeling (NEMO) for High Fidelity Simulation of Solid-State Quantum Computing Gates"
NSA / IARPA / ARO Quantum Computing Technology Workshop, Denver, August 11-12, 2011.20110
0