Journals (7)
"Optimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs"
IEEE Transactions on Nanotechnology (2016);doi:10.1109/TNANO.2016.25834112016Not Cited Yet
"Design Guidelines for Sub-12 nm Nanowire MOSFETs"
IEEE Transactions on Nanotechnology, vol. 14, Issue: 2, Page(s): 210 - 213, March 2015;doi: 10.1109/TNANO.2015.23954412015
"Transistor roadmap projection using predictive full-band atomistic modeling"
Appl. Phys. Lett. 105, 083508 , published online 28 August 2014;doi:10.1063/1.48942172014
"Performance Comparisons of III-V and strained-Si in Planar FETs and Non-planar FinFETs at Ultra-short Gate Length (12nm)"
IEEE Transactions on Electron Devices, vol. 59, Issue: 8, Page(s): 2107 - 2114, Aug. 2012;doi:10.1109/TED.2012.21984812012Not Cited Yet
"Calculation of Phonon Spectrum and Thermal Properties in Suspended <100> InXGa1-XAs Nanowires"
Journal of Computational Electronics March 2012, Volume 11, Issue 1, pp 22-28;doi:10.1007/s10825-012-0389-82012Not Cited Yet
"Enhanced valence force field model for the lattice properties of gallium arsenide"
Physical Review B, Vol. 84, pg. 155204, Published 17 October 2011;doi :10.1103/PhysRevB.84.1552042011Cited by 8 / 17 Downloads
"Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parameterization"
Phys. Rev. B, Vol 81, 125202 (2010);doi:10.1103/PhysRevB.81.1252022010Cited by 1 / 118 Downloads
Proceedings (8)
"Tunneling: The Major Issue in Ultra-scaled MOSFETs"
IEEE Nano, Rome, Italy, July 26-30, 2015, Pages: 670 - 673;doi:10.1109/NANO.2015.73886942015Not Cited Yet
"More Moore landscape for system readiness-ITRS2. 0 requirements"
32nd IEEE International Conference on Computer Design (ICCD), pp. 147-152, Oct. 2014;doi: 10.1109/ICCD.2014.69746742015Not Cited Yet
"Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors"
2014 IEEE Silicon Nanoelectronics Workshop (SNW), 8-9 June 2014, Honolulu, HI, Page(s): 1 - 2;doi:10.1109/SNW.2014.73486062014Not Cited Yet
"Performance degradation due to thicker physical layer of high k oxide in ultra-scaled MOSFETs and mitigation through electrostatics design"
2014 IEEE Silicon Nanoelectronics Workshop (SNW), 8-9 June 2014, Honolulu, HI, Page(s): 1 - 2;doi:10.1109/SNW.2014.73485672014Not Cited Yet
"Quantum Corrected Drift-Diffusion Simulation for Prediction of CMOS Scaling"
Device Research Conference, 20132013Not Cited Yet
"Parameter Fitting for Lattice Properties of Gallium Arsenide using Parallel Genetic Algorithm"
2011 IEEE Congress on Evolutionary Computation, 5-8 June 2011;doi:10.1109/CEC.2011.59499182011Not Cited Yet
"Single Layer MoS2 Band Structure and Transport"
International Semiconductor Device Research Symposium (ISDRS 2011), Dec 7-11, Univ of Maryland2011Not Cited Yet
"Contact Modeling and Analysis of InAs HEMT Transistors"
IEEE proceedings of IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2011), Oct. 18-21, 2011 at The Shilla Jeju, Korea2011Cited by 1 / 26 Downloads
Conferences (19)
"Tunneling: The Major Issue in Ultra-scaled MOSFETs"
IEEE Nano, Rome, Italy, July 26-30, 20152015
"Development of the NEMO Tool Suite From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Arizona State, Electrical Engineering Advanced Semiconductor Device Class, Host: Prof. Dragica Vasileska, April 20, 20152015
"Transport Properties of 2D Material Transistors"
TECHON 2014, October 1-3, 2014, Santa Clara, CA2014
"Atomistic Simulation of Steep Subthreshold Slope Bi-layer MoS2 Transistors"
Poster Session, 2014 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI USA June 8-9, 20142014
"Performance Degradation due to Thick Physical Layer of High-k Oxide in Ultra- scaled MOSFETs and Mitigation through Electrostatics Design"
2014 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI USA June 8-9, 20142014
"Development of the NEMO Tool Suite From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Embedded tutorial on FinFET: A Multifaceted Perspective for CAD Engineers , International Conference on Computer Aided Design, Nov 18-21, 2013, San Jose, CA2013
"Quantum Mechanical Modifications of Drift-diffusion Simulators for Ultra-scaled MOSFETs"
TECHCON, 20132013
"On the Scaling Issues and Possible Solutions for Double Gate MOSFETs at the End of ITRS"
accepted for TECHCON 20132013
"PMOS FinFETs Enhanced through Transport in SiGe Cladding"
submitted to IEDM2013.2013
"On the Scaling Issues and Solutions for Double Gate MOSFETs at the end of ITRS Roadmap"
accepted for ISDRS 20132013
"Performance Comparison of InGaAs and strained-Si in Planar and Non-planar FETs at Ultra-short Gate Length (12nm)"
2012
"Phonon Spectrum and Thermal Properties of free standing <100> and <111> InGaAs alloy nanowires"
APS March Meeting 2012, Boston, US2012
"Contact-to-channel Resistance Modeling in HEMT Devices"
MSD review May 2012, Boston. 2012
"Exploring the Impact of nanoHUB.org on Research and Education"
HUBbub 2011, the HUBzero conference, April 5-6, 2011, Indianapolis. Presentation online at http://hubzero.org/resources/4292011
"Parameter Fitting for Lattice Properties of Gallium Arsenide using Parallel Genetic Algorithm"
2011 IEEE Congress on Evolutionary Computation, 5-8 June 2011;doi:10.1109/CEC.2011.59499182011
"Model development for lattice properties of gallium arsenide using parallel genetic algorithm "
Evolutionary Computation (CEC), 2011 IEEE Congress on, Page(s): 2429 - 2435; doi: 10.1109/CEC.2011.59499182011
"Contact Modeling and Analysis of InAs HEMT Transistors"
IEEE proceedings of IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2011), Oct. 18-21, 2011 at The Shilla Jeju, Korea2011
"Single Layer MoS2 Band Structure and Transport"
2011 International Semiconductor Device Research Symposium (ISDRS 2011), Dec 7-11, Univ of Maryland2011
"Contact Modeling in HEMT Devices"
MSD/ FCRP Annual Review, Student Poster, MIT, Boston, MA, May 10-11, 2011.2011