%0 Journal Article %D 2012 %T Performance Comparisons of III-V and strained-Si in Planar FETs and Non-planar FinFETs at Ultra-short Gate Length (12nm) %A Park, Seung Hyun %A Liu, Yang %A Kharche, Neerav %A Salmani-Jelodar, Mehdi %A Klimeck, Gerhard %A Lundstrom, Mark %A Luisier, Mathieu %Z IEEE Transactions on Electron Devices, vol. 59, Issue: 8, Page(s): 2107 - 2114, Aug. 2012; doi:10.1109/TED.2012.2198481