Daniel Valencia

Question/Problem:

• Can we simulate NMOS, PMOS and TFETs with EH?

Objective:

• Extend the N5 interface work to common device simulation such as nanowires and UTB with EH method.

Approach:

• Silicon NW were constructed and IV curve characteristics were calculated for an identical device.

Results/Impact:

• NMOSFET device model by EH and TB for a silicon nanowire has shown a difference on the confinement band structure
• IV curves characteristic for NMOS shows similar characteristics to TB.