Index of /~yep/Papers/_vti_cnf

[ICO]NameLast modifiedSizeDescription
[PARENTDIR]Parent Directory  -  
[ ]la700979r_albana.pdf2009-07-01 15:12 150  
[ ]iedm_2010_all oxide FET.pdf2010-12-13 17:30 160  
[ ]Ye book chapter Springer Series Adv Microel 27 341 (2007) III-V MOSFET with ALD high-k.pdf2009-07-01 15:12 150  
[ ]Yale_Purdue_ApplPhysLett_92_143507.pdf2009-07-01 15:12 150  
[ ]Wallace Review Article 2011.pdf2011-08-04 12:58 134  
[ ]VLSI_T216.pdf2014-06-15 14:20 150  
[ ]VLSI_T91.pdf2014-06-15 14:20 150  
[ ]VLSI_T64.pdf2014-06-15 14:20 150  
[ ]Thumbs.db2011-01-10 13:25 201  
[ ]TED_XuanYi_2007.pdf2009-07-01 15:12 150  
[ ]TED_Mobility_Lehigh_Purdue_2011.pdf2011-08-04 12:52 249  
[ ]TED_Fudan_Reliability_2012.pdf2012-06-04 14:25 150  
[ ]TDMR_Purdue_Early Access_2013.pdf2013-10-21 10:37 150  
[ ]TDMR_Fudan_Early Access_2013.pdf2013-10-21 10:37 150  
[ ]Surface science_Ye_orientation_MPI.pdf2009-07-01 15:12 150  
[ ]Springer Book Chapter 7 Ye.pdf2010-05-24 11:40 150  
[IMG]Springe Book Face_2010.jpg2013-01-08 13:34 310  
[ ]SolidStateElectronics_Highk_CNT_2008.pdf2009-07-01 15:12 150  
[ ]SST_Ye_stress_MPI.pdf2009-07-01 15:12 150  
[ ]SST_Ye_2D_Dy_MPI.pdf2009-07-01 15:12 150  
[ ]SST_Fudan_2014.pdf2014-10-31 16:02 150  
[ ]SSE_2012_RF_LAO_STO.pdf2012-07-19 15:59 150  
[ ]PhysicaBHuge MR_Ye_MPI.pdf2009-07-01 15:12 150  
[ ]PhysRevLett_93_206805_two solid phase_Chen Yong.pdf2009-07-01 15:12 150  
[ ]PhysRevLett_93_176808_WC_Bubble_Lewis.pdf2009-07-01 15:12 150  
[ ]PRL_e176802_WC_Ye.pdf2009-07-01 15:06 185  
[ ]PRL_e136804_Bubble_Lewis.pdf2009-07-01 15:12 150  
[ ]PRL_e016801_WC_IQHE_ChenYong.pdf2009-07-01 15:12 150  
[ ]PRL_1D_Dy_MPI_Ye.pdf2009-07-01 15:05 185  
[ ]PRB_quantum dots_NTT_Ye.pdf2009-07-01 15:12 150  
[ ]PRB_antidots_NHMFL_Ye.pdf2009-07-01 15:12 150  
[ ]Nature_Phosphorene_2014.pdf2014-02-04 14:55 143  
[ ]Nature Physics_Yong Chen_Princeton_2006.pdf2009-07-01 15:12 150  
[ ]Nature Nano_nnano.2007.151.pdf2009-07-01 15:12 150  
[ ]Nano Letters_XW_DL_ALE_nl3041349.pdf2013-01-08 14:11 150  
[ ]Nano Letters Kun NIST_nl303669w_December 17 2012.pdf2013-01-08 14:11 150  
[ ]NL_Doping_WS2_MoS2_2014_ASAP.pdf2014-10-28 17:38 150  
[ ]NL_CVD MoS2_2013_ASAP.pdf2013-06-03 13:05 150  
[ ]Modulation of the high mobility two-dimensional electrons in SiSiGe using.pdf2009-07-01 15:12 150  
[ ]MoS2 Nanoribbon_EDL_2012.pdf2012-12-03 16:16 150  
[ ]Minority-carrier characteristics of InGaAs metal-oxide-semiconductor.pdf2009-07-01 15:12 150  
[ ]Microelectronics Reliability_SUNY.pdf2009-07-01 15:12 150  
[ ]Micro Raman Zhe Luo 2014.pdf2014-04-27 19:01 150  
[ ]MSB11021_GaN MOSFET_Printed PDF.pdf2009-07-01 15:12 150  
[ ]Leakage current and breakdown electric-field studies.pdf2009-07-01 15:12 150  
[ ]JVTBD9294041206_1.pdf2011-08-04 12:58 150  
[ ]JPCC_laser annealing_In2O3 NW.pdf2012-04-06 17:41 150  
[ ]JPCC_Kun Xu_Graphene Edge_2014.pdf2014-06-15 13:10 150  
[ ]JPCC-2010-114-10505-Kun.pdf2010-06-24 17:12 150  
[ ]JEM_Mike Bolen_2010.pdf2010-09-24 12:40 150  
[ ]JApplPhys_113_013711_Min_InP_111A.pdf2013-01-08 13:49 220  
[ ]JApplPhys_102_034502_GaN_Simulation.pdf2009-07-01 15:12 150  
[ ]JApplPhys_100_074501_GaN_SITP_Simulation.pdf2009-07-01 15:12 150  
[ ]JApplPhys_81_5444_Dy_MPI_Ye.pdf2009-07-01 15:12 150  
[ ]JAP_JJGu_InGaAs_2011.pdf2011-03-09 14:36 150  
[ ]JAP_InP_Band Alignment_NIST_2013.pdf2013-01-09 13:03 150  
[ ]JAP_Graphene Transport_2012.pdf2012-01-13 10:16 150  
[ ]InGaAs-Charge-Pumping-Lehigh-Purdue-2010.pdf2010-02-17 10:32 150  
[ ]InGaAs-Al2O3-NIST-Purdue-2010.pdf2010-02-02 19:20 150  
[ ]Improvement of GaAs metal¿Csemiconductor field-effect.pdf2006-10-29 18:52 203  
[ ]IRPS_InGaAs Planar_2012_Late News.pdf2012-04-27 10:43 150  
[ ]IRPS2014_Shin_4A03.pdf2014-06-03 13:50 150  
[ ]IRPS2010_wrachien.pdf2010-05-10 11:42 150  
[ ]III-V MOSFET Science 2009.pdf2009-03-11 12:56 143  
[ ]IEEE Trans Nano MF Li.pdf2013-09-25 13:02 150  
[ ]IEEE Trans Advanced Packaging_2009.pdf2009-07-01 15:12 150  
[ ]IEEE Spectrum GaAs MOSFET 2008.pdf2009-07-01 15:12 169  
[ ]IEEE EDL_Volumn Inversion_JJGu_2012.pdf2012-06-26 15:56 150  
[ ]IEDM_S33P02_GAA_Purdue.pdf2011-12-08 16:38 150  
[ ]IEDM_S27P01_Fudan_Purdue.pdf2011-12-08 16:38 150  
[ ]IEDM_2008_Interface.pdf2009-07-01 15:12 150  
[ ]IEDM_2008_InGaAs MOSFET.pdf2009-07-01 15:12 150  
[ ]IEDM_2007_S23P08.pdf2009-07-01 15:12 150  
[ ]IEDM2013_S07P05.pdf2013-12-13 15:48 150  
[ ]IEDM 2012_JJ Gu_63mvdec_S27P06.pdf2013-01-08 13:44 220  
[ ]IEDM 2012_JJ Gu_4D_S23P07.pdf2013-01-08 13:44 220  
[ ]High-performance GaAs metal-insulator-semiconductor field-effect.pdf2009-07-01 15:12 150  
[ ]Graphene_Book_Chapter_Ye_Purdue_2012.pdf2012-03-20 17:49 150  
[ ]GaN metal-oxide-semiconductor high-electron-mobility-transistor.pdf2009-07-01 15:12 150  
[ ]GaN MOSHEMT International Journal of High Speed Electronics and Systems.pdf2009-07-01 15:12 150  
[ ]Formation and characterization of nanometer scale.pdf2009-07-01 15:12 150  
[ ]Evidence of a First-Order Phase Transition BetweenWigner-Crystal.pdf2007-01-24 14:15 387  
[ ]ESL000H51_Chen Wang_GaSb_2012.pdf2012-02-08 12:46 150  
[ ]ESL000H27_Chen Wang_InP 111A ZERO DRIFT_2012.pdf2012-01-20 11:03 150  
[ ]EDL_Variability_GG_early access_2013.pdf2013-04-23 13:15 134  
[ ]EDL_UIUC_Model_2013.pdf2013-06-03 12:55 150  
[ ]EDL_Short Channel Effect_2009_YQ Wu.pdf2009-07-01 15:12 150  
[ ]EDL_MoS2_PEI_asap.pdf2013-08-28 12:50 150  
[ ]EDL_MoS2_Graphene Contacts_Final_2014.pdf2014-05-01 12:23 150  
[ ]EDL_MoS2_Graphene Contact_2014.pdf2014-05-01 12:23 134  
[ ]EDL_MoS2 MOSFET_2012.pdf2012-03-23 16:10 150  
[ ]EDL_InGaAs_Reliability_2011.pdf2011-04-07 15:53 150  
[ ]EDL_InGaAs NW Variability_2013_Final.pdf2013-04-23 13:15 150  
[ ]EDL_InGaAs Inversion_2007.pdf2009-07-01 15:12 150  
[ ]EDL_GaSb PMOSFET_2011_printed version.pdf2011-08-04 12:58 150  
[ ]EDL_GaSb PMOSFET_2011_preversion.pdf2011-08-04 12:58 134  
[ ]EDL_GaAsMOSFET_Agere_Ye_2003.pdf2009-07-01 15:05 185  
[ ]EDL_BP_RF_ASAP_2014.pdf2014-10-28 17:38 150  
[ ]EDL_BP_ALD Capping_asap.pdf2014-05-29 10:47 150  
[ ]EDL_BAE_GaN_MOSHEMT_2013_early.pdf2013-06-03 12:55 134  
[ ]EDL_BAE_GaN_2013.pdf2013-06-03 12:55 150  
[ ]EDL_ALE_NMOSFET_LD_early access_2013.pdf2013-03-23 11:30 134  
[ ]EDL_ALE_NMOSFET_LD_Final_2013.pdf2013-03-23 11:30 150  
[ ]EDL_1A_2008.pdf2009-07-01 15:06 185  
[ ]ECT_2010_nano.pdf2010-04-22 18:08 150  
[ ]ECT_2010_35.pdf2010-04-22 18:08 150  
[ ]ECT000459_invited_high k graphene_2010.pdf2010-10-27 14:34 150  
[ ]ECS_Transaction_Review_Cancun_Mexico_2006.pdf2009-07-01 15:12 150  
[ ]ECS_Review_SFO_2009.pdf2009-07-01 15:12 150  
[ ]ECS_2013_Paper_19504_manuscript_6579_0[1].pdf2013-11-22 09:54 150  
[ ]ECSTrans2012_III-V3D_JJGu.pdf2012-04-27 12:11 150  
[ ]DRC abstract - Direct Observation of Dirac Point and Fermi level alignment of Graphene-final.pdf2012-06-28 11:34 143  
[ ]DRC_MultiStackGAA_Jiangjiang_Final.pdf2012-06-28 11:34 143  
[ ]Current-transport properties of atomic-layer-deposited ultrathin.pdf2009-07-01 15:12 150  
[ ]Compound Semiconductor Research Review InP.pdf2008-10-08 12:49 142  
[ ]Chemical Society Review 2014.pdf2014-10-31 09:43 150  
[ ]Carbon_Xianfan Xu_2013.pdf2013-01-16 13:21 150  
[ ]Capacitance-voltage studies on enhancement-mode InGaAs.pdf2009-07-01 15:12 150  
[ ]CSApr08Ye.pdf2013-01-08 15:45 159  
[ ]COSSMS_Review(2011)_Bob Wallace.pdf2011-07-13 16:15 204  
[ ]COSSMS_Review(2011).pdf2011-08-04 12:58 150  
[ ]BP_Chemical Society Review 2014.pdf2014-10-31 10:35 150  
[ ]BMMD Moon 2008.pdf2009-07-01 15:12 150  
[ ]ApplPhysLett_U Leuven_GaAs 111A_PLE.pdf2012-04-02 10:17 150  
[ ]ApplPhysLett_99_NH4S passivation_2011.pdf2011-10-14 11:02 150  
[ ]ApplPhysLett_97_162910_LaLuO3_GaAs111A.pdf2010-10-23 11:20 150  
[ ]ApplPhysLett_93_061907_2008_HfAlO_UTD.pdf2009-07-01 15:12 150  
[ ]ApplPhysLett_92_013101_HOPG_2008.pdf2009-07-01 15:12 150  
[ ]ApplPhysLett_91_GaAs MOSHEMT_Dennis.pdf2009-07-01 15:12 150  
[ ]ApplPhysLett_91_232107_Channel Engineering.pdf2009-07-01 15:12 150  
[ ]ApplPhysLett_91_142122_Laminate.pdf2009-07-01 15:12 150  
[ ]ApplPhysLett_91_022108_InP_Emode_Wu_2007.pdf2009-07-01 15:12 150  
[ ]ApplPhysLett_90_163108_ALD_CNTFET.pdf2009-07-01 15:12 150  
[ ]ApplPhysLett_90_143504_GaN_PhotoCV_2007.pdf2009-07-01 15:12 150  
[ ]ApplPhysLett_90_072105_maximum strength_Yanqing.pdf2009-07-01 15:12 150  
[ ]ApplPhysLett_84_434_Dmode_InGaAs_2004.pdf2009-07-01 15:12 150  
[ ]ApplPhysLett_83_180_GaAs Dmode_Ye.pdf2009-07-01 15:12 150  
[ ]ApplPhysLett_79_2193_PhotoResistanceOscillations_Ye.pdf2009-07-01 15:06 185  
[ ]ApplPhysLett_67_1441_2D_Dy_Ye_MPI.pdf2009-07-01 15:12 150  
[ ]ApplPhysLett101_082114_HYChou_Electron band alignment at the interface of 100InSb with ALD AL2O3.pdf2012-12-03 16:16 150  
[ ]Advanced Materials_Sunkook_2008.pdf2009-07-01 15:12 150  
[ ]ActaMaterialia_2009.pdf2009-07-01 15:12 150  
[ ]AVS_Review_2008.pdf2009-07-01 15:12 150  
[ ]ATNeal_PDYe_DRC_2012.pdf2012-06-28 11:34 143  
[ ]APL_TI_ALD_2011.pdf2011-08-04 16:02 150  
[ ]APL_SAND_GaAs MOSFET_RF_Noise.pdf2009-07-01 15:12 150  
[ ]APL_NIST_Purdue_Intel_2008.pdf2009-07-01 15:12 150  
[ ]APL_Kun Xu_Spin Edge_2014.pdf2014-04-27 19:01 150  
[ ]APL_ITO_2008.pdf2009-07-01 15:12 150  
[ ]APL_III-VON_2011.pdf2011-09-15 12:34 150  
[ ]APL_Graphene Antidots_2008.pdf2009-07-01 15:12 150  
[ ]APL_GeOI_JJGu_2010.pdf2010-07-08 12:43 150  
[ ]APL_GaAs_111A_MOSFET_2009.pdf2009-07-01 15:12 150  
[ ]APL_GaAs MOSFET on Si_2008.pdf2009-07-01 15:12 150  
[ ]APL_ALD_2D Crystal_100_15_152115_2012.pdf2012-04-13 12:03 150  
[ ]APL_2009_Graphene_QHE.pdf2013-01-08 15:45 150  
[ ]APL_2008_Graphene_FET.pdf2009-07-01 15:12 150  
[ ]APL_6nm_InGaAs_NW_Mengwei Si_2013.pdf2013-03-05 13:28 150  
[ ]APL Materials_Contact_Du.pdf2014-10-28 17:38 150  
[ ]ACS_Nano_Adam_nn402377g.pdf2013-08-12 13:02 150  
[ ]ACS Nano_TaSe2_Adam Neal.pdf2014-09-24 10:06 150  
[ ]ACS Nano_Phosphorene_Final_2014.pdf2014-05-01 12:07 150  
[ ]ACS Nano_Phosphorene_2014.pdf2014-05-01 12:07 134  
[ ]ACS Nano_Han Liu_Schottky_2013_Final.pdf2014-05-01 12:23 150  
[ ]ACS Nano_Han Liu_Schottky_2013.pdf2014-05-01 12:23 134  
[ ]ACS Nano_Han Liu_2012.pdf2012-12-03 16:16 150  
[ ]ACS Nano_BP_MoS2_Photo Transistor_Deng_ASAP.pdf2014-09-24 10:06 134  
[ ]ACS Nano_BP_MoS2_Photo Diode.pdf2014-09-24 10:06 150  
[ ]ACS Nano BP Contacts_Final Printed Version.pdf2014-10-28 17:38 150  
[ ]35-05.pdf2009-12-11 18:39 160  
[ ]13-04.pdf2009-12-11 18:39 160  
[ ]13-02.pdf2009-12-11 18:39 160  
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