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![[PARENTDIR]](/icons/back.gif) | Parent Directory | | - | |
![[ ]](/icons/layout.gif) | 2D Materials_2017_Iyer_2D_Mater._4_021032.pdf | 2017-07-03 12:01 | 683K | |
| 2D Materials_2019_UIUC.pdf | 2019-06-21 13:23 | 2.6M | |
| 2D Materials_Te_Huang_2020.pdf | 2019-11-11 15:17 | 2.5M | |
| 2dm_3_2_024003.pdf | 2016-03-28 16:58 | 1.8M | |
| 13-02.pdf | 2009-12-10 16:33 | 355K | |
| 13-04.pdf | 2009-12-10 16:33 | 515K | |
| 35-05.pdf | 2009-12-10 16:33 | 823K | |
| 2015 Nanotechnology_Nam.pdf | 2015-01-16 13:31 | 896K | |
| 2020 JEDS_FE_Channel_Dependent_Final Paper.pdf | 2020-08-22 15:45 | 704K | |
| 2024_ACS AMI_Hagyoul_Cu2O.pdf | 2025-01-03 14:23 | 8.4M | |
| 2024_EDL_InO_high-T_Final.pdf | 2024-08-09 17:20 | 689K | |
| 2024_EDL_InO_high-T_JianYu Lin.pdf | 2024-07-28 14:48 | 690K | |
| 2024_EDL_TG_E-Mode_ALD_In2O3_FETs_With_High_Thermal_Budget_of_600_C.pdf | 2024-12-17 19:30 | 4.3M | |
| 2024_IEDM_12-2_Tue_Niu_IGZO-Te.pdf | 2024-12-17 19:30 | 618K | |
| 2024_IEDM_12-6_Tue_Lin_InO_Quantum confinement_SBH.pdf | 2024-12-17 19:30 | 1.6M | |
| 2024_NL_Regensburg_CPGE.pdf | 2025-01-03 14:16 | 2.7M | |
| 2024_TED_Highly_Robust_All-Oxide_Transistors_Toward_Vertical_Logic_and_Memory.pdf | 2024-12-17 19:30 | 4.3M | |
| 2025_Science Advances_Te thickness.pdf | 2025-01-14 16:23 | 897K | |
| ACS AEM_FEDE Stack_2019_Final.pdf | 2019-06-21 10:45 | 1.5M | |
| ACS AEM_FEDE Stack_2019_Final_Supplement.pdf | 2019-06-21 10:46 | 355K | |
| ACS Nano 2D Se.pdf | 2017-11-03 15:04 | 4.9M | |
| ACS Nano 2020 Yang Chai 1D Se.pdf | 2020-09-08 15:34 | 4.0M | |
| ACS Nano BP Contacts_Final Printed Version.pdf | 2014-10-28 17:07 | 2.6M | |
| ACS Nano ITO 1nm 2020_ASAP.pdf | 2020-08-27 20:04 | 1.7M | |
| ACS Nano ITO 1nm 2020_Final.pdf | 2021-01-17 17:12 | 1.9M | |
| ACS Nano ITO 1nm_SI.pdf | 2020-08-27 20:08 | 1.0M | |
| ACS Nano_2021_Asymmetry FSJ.pdf | 2021-09-16 14:00 | 1.4M | |
| ACS Nano_2021_Asymmetry FSJ_SI.pdf | 2021-09-16 14:13 | 197K | |
| ACS Nano_2024_SC.pdf | 2024-06-04 16:57 | 4.2M | |
| ACS Nano_BP_MoS2_Photo Diode.pdf | 2014-09-24 09:39 | 4.4M | |
| ACS Nano_BP_MoS2_Photo Transistor_Deng_ASAP.pdf | 2014-08-14 13:54 | 4.4M | |
| ACS Nano_BP_Plasmonic_2018.pdf | 2018-07-06 12:12 | 3.3M | |
| ACS Nano_CIPS_2018.pdf | 2018-08-27 12:27 | 2.2M | |
| ACS Nano_CIPS_ECE_2019_asap.pdf | 2019-08-06 10:25 | 3.2M | |
| ACS Nano_CIPS_ECE_2019_final.pdf | 2019-09-18 11:14 | 3.2M | |
| ACS Nano_CIPS_ECE_SI_2019_asap.pdf | 2019-08-06 10:28 | 666K | |
| ACS Nano_Han Liu_2012.pdf | 2012-12-03 16:06 | 2.4M | |
| ACS Nano_Han Liu_Schottky_2013.pdf | 2013-12-31 12:10 | 1.9M | |
| ACS Nano_Han Liu_Schottky_2013_Final.pdf | 2014-05-01 12:20 | 1.9M | |
| ACS Nano_In2Se3 Asymmetric_Intel_2021_asap.pdf | 2021-03-14 16:22 | 1.1M | |
| ACS Nano_In2Se3 Asymmetric_Intel_2021_asap_SI.pdf | 2021-03-14 16:24 | 197K | |
| ACS Nano_Phosphorene_2014.pdf | 2014-04-08 12:38 | 3.3M | |
| ACS Nano_Phosphorene_Final_2014.pdf | 2014-05-01 12:03 | 3.3M | |
| ACS Nano_TaSe2_Adam Neal.pdf | 2014-09-24 09:52 | 1.7M | |
| ACS Omega GaO Steep Slope.pdf | 2017-10-26 11:38 | 1.7M | |
| ACS Omega GaO thermal 2017.pdf | 2017-11-09 16:26 | 4.8M | |
| ACS Omega_Asymmetric Contacts_Lingming Yang_2017.pdf | 2017-08-03 10:24 | 2.8M | |
| ACS_AMI_2022_CIPS_ORNL.pdf | 2022-01-19 10:12 | 4.1M | |
| ACS_AMI_2022_CIPS_ORNL_SI.pdf | 2022-01-19 10:14 | 712K | |
| ACS_Interface_UTD_ALD_BP_2015.pdf | 2015-06-10 11:14 | 3.3M | |
| ACS_Nano_Adam_nn402377g.pdf | 2014-01-09 11:11 | 1.7M | |
| ACS_Omega_Cu2O_Bae_2019.pdf | 2019-12-18 12:34 | 2.7M | |
| AEM_2024.pdf | 2024-06-04 16:43 | 2.7M | |
| AFM_BN_Xianfan Xu_2019.pdf | 2019-12-16 13:29 | 837K | |
| AFM_Qingkai Qi_2018.pdf | 2018-10-20 17:07 | 2.2M | |
| APL Fluorine Passivation In2O3 TFT_2022.pdf | 2023-04-28 09:46 | 4.0M | |
| APL Ga2O3 beyond 1A.pdf | 2017-08-31 10:18 | 1.0M | |
| APL Ga2O3 thermal limit_2019.pdf | 2019-11-05 16:24 | 1.6M | |
| APL Materials_Contact_Du.pdf | 2014-10-28 17:24 | 1.2M | |
| APL Review_Contact_Du.pdf | 2014-08-29 11:01 | 1.2M | |
| APL_6nm_InGaAs_NW_Mengwei Si_2013.pdf | 2013-03-05 12:57 | 1.5M | |
| APL_2008_Graphene_FET.pdf | 2008-03-04 13:20 | 378K | |
| APL_2009_Graphene_QHE.pdf | 2009-10-28 15:35 | 154K | |
| APL_2021_FEDE_Simulation.pdf | 2021-09-28 11:39 | 2.6M | |
| APL_2024_Ga2O3_Diamond Cooling.pdf | 2024-04-29 14:07 | 2.2M | |
| APL_ALD_2D Crystal_100_15_152115_2012.pdf | 2012-04-13 11:18 | 1.1M | |
| APL_Editorial_NCFET_2019.pdf | 2019-03-08 15:49 | 1.4M | |
| APL_Fast Pulse_NIST_2019.pdf | 2019-08-16 14:27 | 2.3M | |
| APL_GaAs MOSFET on Si_2008.pdf | 2008-12-18 12:51 | 138K | |
| APL_GaAs_111A_MOSFET_2009.pdf | 2009-06-01 11:39 | 209K | |
| APL_GeOI_JJGu_2010.pdf | 2010-07-08 12:31 | 481K | |
| APL_Graphene Antidots_2008.pdf | 2008-09-22 15:28 | 246K | |
| APL_III-VON_2011.pdf | 2011-09-15 12:28 | 559K | |
| APL_ILG_GaN_Hong Zhou_2016.pdf | 2016-05-19 15:37 | 1.4M | |
| APL_ITO_2008.pdf | 2008-06-27 15:55 | 101K | |
| APL_In2O3_High On Off Ratio_2021.pdf | 2022-01-10 11:03 | 1.7M | |
| APL_In2O3_O2 plasma_Adam_2021.pdf | 2021-02-07 13:47 | 1.6M | |
| APL_Kun Xu_Spin Edge_2014.pdf | 2014-04-27 18:13 | 584K | |
| APL_NIST_Purdue_Intel_2008.pdf | 2008-08-27 16:33 | 323K | |
| APL_SAND_GaAs MOSFET_RF_Noise.pdf | 2007-08-27 14:52 | 294K | |
| APL_Sandia_first one_2018.pdf | 2018-08-27 12:23 | 967K | |
| APL_Sandia_second one_2018.pdf | 2019-01-02 14:55 | 1.0M | |
| APL_TI_ALD_2011.pdf | 2011-08-04 15:53 | 1.6M | |
| APL_Te Edge Imaging_NIST_2020.pdf | 2021-01-17 16:40 | 2.4M | |
| APL_Vertically stacked multilayer In2O3_Zhuocheng_2022.pdf | 2022-07-07 14:43 | 4.3M | |
| APL_WaveFET_Jingyun_2015.pdf | 2015-02-20 11:44 | 1.1M | |
| APL_alpha_In2Se3_Sumeet_2020.pdf | 2021-01-17 16:39 | 2.8M | |
| ATNeal_PDYe_DRC_2012.pdf | 2012-03-19 16:14 | 270K | |
| AVS_Review_2008.pdf | 2008-07-08 13:42 | 242K | |
| ActaMaterialia_2009.pdf | 2009-06-01 11:38 | 1.6M | |
| Advanced Functional Materials_hBN_2020.pdf | 2020-07-07 16:38 | 836K | |
| Advanced Materials 2015_Xuefei.pdf | 2015-02-10 12:42 | 1.2M | |
| Advanced Materials 2023 Charnas Review Extremely Thin Amorphous Indium Oxide Transistors.pdf | 2024-01-02 11:18 | 6.4M | |
| Advanced Materials_2025 _Niu.pdf | 2025-04-09 12:09 | 2.7M | |
| Advanced Materials_Sunkook_2008.pdf | 2008-11-13 14:01 | 456K | |
| ApplPhysLett101_082114_HYChou_Electron band alignment at the interface of 100InSb with ALD AL2O3.pdf | 2012-08-24 12:02 | 764K | |
| ApplPhysLett_67_1441_2D_Dy_Ye_MPI.pdf | 2007-07-26 09:50 | 801K | |
| ApplPhysLett_79_2193_PhotoResistanceOscillations_Ye.pdf | 2007-07-25 11:18 | 76K | |
| ApplPhysLett_83_180_GaAs Dmode_Ye.pdf | 2007-07-25 11:21 | 121K | |
| ApplPhysLett_84_434_Dmode_InGaAs_2004.pdf | 2007-07-25 10:56 | 117K | |
| ApplPhysLett_90_072105_maximum strength_Yanqing.pdf | 2007-02-15 10:17 | 84K | |
| ApplPhysLett_90_143504_GaN_PhotoCV_2007.pdf | 2007-04-03 10:48 | 163K | |
| ApplPhysLett_90_163108_ALD_CNTFET.pdf | 2007-04-17 16:54 | 375K | |
| ApplPhysLett_91_022108_InP_Emode_Wu_2007.pdf | 2007-07-11 14:52 | 266K | |
| ApplPhysLett_91_142122_Laminate.pdf | 2007-10-05 12:41 | 163K | |
| ApplPhysLett_91_232107_Channel Engineering.pdf | 2007-12-18 09:41 | 303K | |
| ApplPhysLett_91_GaAs MOSHEMT_Dennis.pdf | 2007-11-26 14:37 | 215K | |
| ApplPhysLett_92_013101_HOPG_2008.pdf | 2008-01-02 16:48 | 268K | |
| ApplPhysLett_93_061907_2008_HfAlO_UTD.pdf | 2008-08-14 09:40 | 401K | |
| ApplPhysLett_97_162910_LaLuO3_GaAs111A.pdf | 2010-10-23 11:12 | 827K | |
| ApplPhysLett_99_NH4S passivation_2011.pdf | 2011-10-14 10:20 | 720K | |
| ApplPhysLett_U Leuven_GaAs 111A_PLE.pdf | 2012-04-02 10:04 | 842K | |
| BMMD Moon 2008.pdf | 2008-09-24 16:29 | 893K | |
| BP_Chemical Society Review 2014.pdf | 2014-10-31 10:34 | 3.2M | |
| COSSMS_Review(2011).pdf | 2011-07-13 16:15 | 2.9M | |
| COSSMS_Review(2011)_Bob Wallace.pdf | 2011-07-13 16:15 | 2.9M | |
| CSApr08Ye.pdf | 2008-04-15 09:50 | 280K | |
| CSR_Tellurene_2018.pdf | 2018-08-27 13:06 | 5.2M | |
| CSR_Tellurene_2018_Final.pdf | 2018-10-12 16:09 | 5.2M | |
| Capacitance-voltage studies on enhancement-mode InGaAs.pdf | 2006-10-29 18:46 | 125K | |
| Carbon_Xianfan Xu_2013.pdf | 2013-01-16 13:16 | 1.1M | |
| Chaves_et_al-2020-npj_2D_Materials_and_Applications.pdf | 2020-09-08 15:41 | 5.9M | |
| Compound Semiconductor Research Review InP.pdf | 2007-10-05 13:14 | 313K | |
| Concurrent_Characterization_of_GaN_MOSHEMT_Gate_Leakage_via_Electrical_and_Thermoreflectance_Measurements.pdf | 2023-11-22 10:48 | 2.2M | |
| Crystal Growth and Design 2023.pdf | 2023-04-28 10:59 | 8.0M | |
| Current-transport properties of atomic-layer-deposited ultrathin.pdf | 2006-10-29 18:43 | 134K | |
| DRC_MultiStackGAA_Jiangjiang_Final.pdf | 2012-06-08 13:52 | 513K | |
| DRC abstract - Direct Observation of Dirac Point and Fermi level alignment of Graphene-final.pdf | 2012-06-26 18:08 | 286K | |
![[ ]](/icons/unknown.gif) | ECE 695_Lecture 2_January_15_2015.ppt | 2015-01-14 10:11 | 5.4M | |
| ECSTrans2012_III-V3D_JJGu.pdf | 2012-04-27 10:56 | 1.0M | |
| ECS_2013_Paper_19504_manuscript_6579_0[1].pdf | 2013-11-22 09:48 | 297K | |
| ECS_Review_SFO_2009.pdf | 2009-05-19 13:32 | 468K | |
| ECS_Transaction_Review_Cancun_Mexico_2006.pdf | 2006-11-30 12:44 | 325K | |
| ECT000459_invited_high k graphene_2010.pdf | 2010-10-27 14:25 | 155K | |
| ECT_2010_35.pdf | 2010-04-20 15:00 | 496K | |
| ECT_2010_nano.pdf | 2010-04-20 14:59 | 504K | |
| EDL_1A_2008.pdf | 2008-03-24 12:08 | 195K | |
| EDL_2021_Ferroelectric_FET_Based_Coupled-Oscillatory_Network_for_Edge_Detection.pdf | 2021-11-18 14:14 | 2.9M | |
| EDL_2021_In2O3 High Performance.pdf | 2021-09-10 10:14 | 1.1M | |
| EDL_2021_In2O3 Reliability_ASAP.pdf | 2022-01-10 11:09 | 548K | |
| EDL_2024_In2O3 600C_Lin.pdf | 2024-10-03 12:44 | 4.3M | |
| EDL_ALE_InAlN_GaN_MOSHEMT_Hong_2016_accepted.pdf | 2016-03-30 10:30 | 944K | |
| EDL_ALE_NMOSFET_LD_Final_2013.pdf | 2013-03-23 11:22 | 422K | |
| EDL_ALE_NMOSFET_LD_early access_2013.pdf | 2013-03-08 15:49 | 419K | |
| EDL_BAE_GaN_2013.pdf | 2013-06-03 12:42 | 321K | |
| EDL_BAE_GaN_MOSHEMT_2013_early.pdf | 2013-04-23 12:58 | 317K | |
| EDL_BAE_InAlN_GaN_2015.pdf | 2015-05-05 12:45 | 597K | |
| EDL_BP_ALD Capping_asap.pdf | 2014-05-29 10:44 | 623K | |
| EDL_BP_RF_ASAP_2014.pdf | 2014-10-28 17:30 | 566K | |
| EDL_Ga2O3_Dit_Bae_2018.pdf | 2018-11-13 13:26 | 1.4M | |
| EDL_Ga2O3_FET_2016.pdf | 2017-01-05 15:37 | 744K | |
| EDL_Ga2O3_Interface_2016.pdf | 2016-11-15 17:50 | 728K | |
| EDL_GaAsMOSFET_Agere_Ye_2003.pdf | 2007-07-26 09:47 | 312K | |
| EDL_GaN MOSHEMT MgCaO_2016.pdf | 2016-05-11 16:22 | 1.1M | |
| EDL_GaN MOSHEMT MgCaO_RF Tgate_2017.pdf | 2017-10-18 13:41 | 875K | |
| EDL_GaSb PMOSFET_2011_preversion.pdf | 2011-05-31 12:30 | 337K | |
| EDL_GaSb PMOSFET_2011_printed version.pdf | 2011-08-04 12:54 | 341K | |
| EDL_In2O3_Scaling_2020_ASAP.pdf | 2021-01-17 16:20 | 437K | |
| EDL_InGaAs Inversion_2007.pdf | 2007-10-30 11:33 | 176K | |
| EDL_InGaAs NW Variability_2013_Final.pdf | 2013-04-23 13:07 | 1.1M | |
| EDL_InGaAs_Reliability_2011.pdf | 2011-04-07 15:47 | 325K | |
| EDL_MoS2 MOSFET_2012.pdf | 2012-03-23 15:58 | 225K | |
| EDL_MoS2_Graphene Contact_2014.pdf | 2014-04-08 12:33 | 536K | |
| EDL_MoS2_Graphene Contacts_Final_2014.pdf | 2014-05-01 12:15 | 540K | |
| EDL_MoS2_PEI_Final.pdf | 2013-10-24 16:38 | 745K | |
| EDL_MoS2_PEI_asap.pdf | 2013-08-28 12:43 | 284K | |
| EDL_Short Channel Effect_2009_YQ Wu.pdf | 2009-06-26 10:42 | 178K | |
| EDL_Temporal and Thermal Stability of Al2O3-Passivated Phosphorene MOSFETs_Final.pdf | 2014-11-24 10:51 | 561K | |
| EDL_UIUC_Model_2013.pdf | 2013-06-03 12:43 | 319K | |
| EDL_Variability_GG_early access_2013.pdf | 2013-03-08 15:47 | 1.1M | |
| EDL_Yale_Ga2O3_2018.pdf | 2018-07-06 11:27 | 695K | |
| EDL_Yuchen_BP_P doping_2016.pdf | 2016-03-30 09:53 | 633K | |
| ESL000H27_Chen Wang_InP 111A ZERO DRIFT_2012.pdf | 2012-01-20 10:14 | 825K | |
| ESL000H51_Chen Wang_GaSb_2012.pdf | 2012-02-08 12:42 | 1.5M | |
| Evidence of a First-Order Phase Transition BetweenWigner-Crystal.pdf | 2006-10-29 23:43 | 1.2M | |
| FE RF MEMs_2020.pdf | 2020-01-28 15:38 | 1.3M | |
| Formation and characterization of nanometer scale.pdf | 2006-10-29 18:50 | 127K | |
| Frontier in Materials_Interface_Mengwei Si_2022.pdf | 2022-07-07 14:47 | 1.9M | |
| GaN MOSHEMT International Journal of High Speed Electronics and Systems.pdf | 2006-11-30 16:06 | 359K | |
| GaN metal-oxide-semiconductor high-electron-mobility-transistor.pdf | 2006-10-29 18:54 | 234K | |
| Gang Qiu-Laser BP-2018-Advanced_Materials.pdf | 2018-02-23 17:22 | 2.6M | |
| Graphene_Book_Chapter_Ye_Purdue_2012.pdf | 2012-03-20 17:39 | 1.3M | |
| High-performance GaAs metal-insulator-semiconductor field-effect.pdf | 2006-10-29 18:39 | 409K | |
| IEDM-Dongqi-IZO.PDF | 2022-12-19 21:20 | 567K | |
| IEDM-Mengwei-M3D.PDF | 2022-12-19 21:20 | 913K | |
| IEDM-PYL-thermal.PDF | 2022-12-19 21:20 | 696K | |
| IEDM-Zhuocheng-Reliability.PDF | 2022-12-19 21:20 | 599K | |
| IEDM 2012_JJ Gu_4D_S23P07.pdf | 2013-01-08 13:32 | 2.1M | |
| IEDM 2012_JJ Gu_63mvdec_S27P06.pdf | 2013-01-08 13:33 | 1.3M | |
| IEDM2013_S07P05.pdf | 2013-12-13 15:39 | 673K | |
| IEDM2014_S05P02_BP_optics.pdf | 2014-12-15 00:38 | 1.9M | |
| IEDM2014_S09P03_Ge_CMOS.pdf | 2014-12-15 00:37 | 1.8M | |
| IEDM2014_S16P07_Ge_device.pdf | 2014-12-15 00:38 | 1.8M | |
| IEDM2014_S20P01_IIIV_RTN.pdf | 2014-12-15 00:39 | 2.6M | |
| IEDM2014_S20P03_IIIV_thermal.pdf | 2014-12-15 00:40 | 3.3M | |
| IEDM 2015_35 NW_Jingyun_S15P02.pdf | 2015-12-18 07:53 | 1.9M | |
| IEDM 2015_Ge NW CMOS_Heng_S02P01.pdf | 2015-12-18 07:54 | 1.1M | |
| IEDM 2018_Chung.PDF | 2018-12-12 16:49 | 891K | |
| IEDM 2021 Gupta 15-2.PDF | 2021-12-13 01:20 | 1.1M | |
| IEDM 2021 Zehao Lin 17-4.PDF | 2021-12-13 01:23 | 575K | |
| IEDM 2023_37-2_Wed_Purdue_contact.pdf | 2023-12-17 06:21 | 1.1M | |
| IEDM 2023_37-5_Wed_Purdue_thermal-RC.pdf | 2023-12-17 06:21 | 1.3M | |
| IEDM 2023_41-1_Wed_Purdue_IGO.pdf | 2023-12-17 06:21 | 1.8M | |
| IEDM_2007_S23P08.pdf | 2007-12-18 09:43 | 352K | |
| IEDM_2008_InGaAs MOSFET.pdf | 2008-12-19 13:26 | 370K | |
| IEDM_2008_Interface.pdf | 2008-12-19 13:29 | 535K | |
| IEDM_2016_Shin_404.pdf | 2016-12-15 14:51 | 710K | |
| IEDM_2016_Yang_127.pdf | 2016-12-15 14:56 | 767K | |
| IEDM_2017_2D NCFET_Mengwei_2305.pdf | 2017-12-12 11:01 | 1.0M | |
| IEDM_2017_Ge NCFET_Chung_1503.pdf | 2017-12-12 10:59 | 1.1M | |
| IEDM_2019_FTJ_06-6-259.pdf | 2019-12-16 15:01 | 1.0M | |
| IEDM_2019_Sub1ns_15-2-450.pdf | 2019-12-16 15:00 | 484K | |
| IEDM_Gupta_2020.PDF | 2020-11-20 17:51 | 6.3M | |
| IEDM_S27P01_Fudan_Purdue.pdf | 2011-12-08 16:24 | 425K | |
| IEDM_S33P02_GAA_Purdue.pdf | 2011-12-08 16:26 | 913K | |
| IEEE EDL 2017 Ge nFET ballistic transport.pdf | 2017-04-11 15:39 | 705K | |
| IEEE EDL 2017 InGaAs Double Gate.pdf | 2017-04-11 15:48 | 762K | |
| IEEE EDL 2018 Ge Mobility Wangran Wu.pdf | 2018-02-23 17:53 | 1.1M | |
| IEEE EDL 2022_GAA_In2O3.pdf | 2023-04-28 09:37 | 1.1M | |
| IEEE EDL 2023_IGO.pdf | 2023-04-26 17:01 | 2.7M | |
| IEEE EDL GaN FinFET 2017.pdf | 2017-09-25 12:05 | 1.0M | |
| IEEE EDL_Volumn Inversion_JJGu_2012.pdf | 2012-06-26 15:51 | 420K | |
| IEEE JEDS Ga2O3 on Diamond 2019.pdf | 2019-09-18 11:20 | 2.6M | |
| IEEESpectrum2016Germanium.pdf | 2016-12-16 11:14 | 4.4M | |
| IEEE Spectrum GaAs MOSFET 2008.pdf | 2008-08-06 18:12 | 286K | |
| IEEE Spectrum Nanosheet 2019.pdf | 2019-09-03 16:50 | 2.1M | |
| IEEE TNS 2017 GaAs.pdf | 2017-04-11 15:27 | 882K | |
| IEEE TNS 2017 GeOI.pdf | 2017-04-11 15:26 | 882K | |
| IEEE Trans Advanced Packaging_2009.pdf | 2009-03-12 15:24 | 1.7M | |
| IEEE Trans Nano MF Li.pdf | 2013-09-25 12:57 | 397K | |
| III-V MOSFET Science 2009.pdf | 2009-03-11 12:14 | 457K | |
| IRPS4A01_2015.pdf | 2015-05-05 15:39 | 880K | |
| IRPS2010_wrachien.pdf | 2010-05-10 11:21 | 441K | |
| IRPS2014_Shin_4A03.pdf | 2014-06-03 13:48 | 350K | |
| IRPS_35_Ge_2017_6A-05.pdf | 2017-04-11 13:17 | 341K | |
| IRPS_2018_Noise on MoS2 NCFET_P-TX01.pdf | 2018-03-13 10:41 | 743K | |
| IRPS_GaN_2017_5C-03.pdf | 2017-04-11 13:15 | 16M | |
| IRPS_InGaAs Planar_2012_Late News.pdf | 2012-04-27 10:29 | 516K | |
| Improvement of GaAs metal�Csemiconductor field-effect.pdf | 2006-10-29 18:52 | 374K | |
| InGaAs-Al2O3-NIST-Purdue-2010.pdf | 2010-02-02 19:12 | 206K | |
| InGaAs-Charge-Pumping-Lehigh-Purdue-2010.pdf | 2010-02-17 10:27 | 165K | |
| J._Phys._D3A_Appl._Phys._51_135306_Chang_NTU.pdf | 2018-03-09 12:47 | 3.0M | |
| JAP 2023_Wendy_Editorial.pdf | 2023-04-28 10:51 | 1.0M | |
| JAP Invited 2022_Dongqi_Final Print.pdf | 2022-08-03 22:07 | 3.1M | |
| JAP_2018_Thermoreflectance imaging of electromigration evolution in asymmetric aluminum.pdf | 2018-01-19 18:11 | 3.8M | |
| JAP_2023_Gupta.pdf | 2023-10-30 11:21 | 3.7M | |
| JAP_Graphene Transport_2012.pdf | 2012-01-13 10:01 | 1.6M | |
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