ECE
 EE 606

ECE-606: Solid State Devices

Syllabus - Fall 2012

Week
Date (lecture)
Topics
Text Readings Misc.
1
(1) 8/21
(2) 8/23
Introduction, Geometry of Crystals
Elements of Quantum Mechanics
ADF Ch. 1
2.1, 2.2
2
(3) 8/28
(4) 8/30
Solution of Schrodinger Equation
Energy Bands
ADF 2.3
3.1, 3.2, 3.2.4
3
(5) 9/4
(6) 9/6
Energy Bands in 3D Crystals
Density of States, Fermi-Dirac Statistics
ADF 3.3, 4.1
4.2
4
(7) 9/11
(8) 9/13
Charge, field, potential, Donor/Acceptor
Equilibrium Statistics, Carrier Conc.
ADF 4.3
4.4, 4.5
5
(9) 9/18
(10) 9/20
Recombination-Generation
SRH formula, Surface Recombination
ADF 5.1
5.2.4, 5.3
6
(11) 9/25
(12) 9/27
Transport, Hall Measurem., Drift-diffusion Eq
ADF 6.1 - 6.1.5
6.3
7
(13) 10/2
(14) 10/4
PN Junction Diode Electrostatics
I-V Characteristics (Forward)
SDF
Notes
Ch. 5, Ch. 6-6.2.4
D1: 1-10
8
10/9
(15) 10/11
Fall Break

 

 
9
(16) 10/16
(17) 10/18
I-V Characteristics (Reverse)
DC IV wrap-up/AC Resp., AC Resp./Trans
MS Contacts
Schottky Diodes
Introduction to Bipolar Transistors
SDF
+
Notes
Ch.6.2.4, 7.1, 7.2, 7.3,8.1
Ch. 14, D1:11-14
Ch. 10,11.1
11.1
10
(18) 10/23



10/25

BJT (continued)
BJT Nonideal effects , BJT Design

Exam 1

Notes 11.2
T2: 1-11
T3: 1-41
11
(19) 10/30
(20) 11/01
BJT II
HBT - I
Notes
SDF
T4: 1-10, T5: 1-16
16.1, 16.2
12

(21) 11/06

(21) 11/08


HBT - II

MOS-C Electrostatics I
MOS-C gate-voltage & poly-dep.

SDF
Notes

16.2,16.3,16.4, 17.1
T6: 16-24 T6: 1-7
13

(22) 11/13
(23) 11/15

Simple IV-VD
MOSFET ID-VD Characteristics
MOSFET ID-VD Complete
SDF
Notes
Ch. 17-17.2.4
T7: 1-11
Ch 18
14

11/20

(24) 11/22

Exam 2

Thanksgiving Break
SDF Ch 18
Ch 18
15
(25) 11/27

(26) 11/29
Reliability Effects
Non-ideal (Back Bias, degradation, SCE, SOI)
Mod. MOS (quantum effects , etc)
Reliability
-
SDF Ch 19
Ch 19
16
 TBD
Final Exam
   


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Legend:

ADF - R. F. Pierret, "Advanced Semiconductor Fundamentals ", Modular Series on Solid State Devices, Volume VI, Addison-Wesley, 1987

SDF - R. F. Pierret, "Semiconductor Device Fundamentals ", Addison-Wesley