Prof. Morisette is a Research Assistant Professor of Electrical and Computer Engineering at Purdue University, with research interests in semiconductor device physics, wide bandgap semiconductors, and power electronic devices. He is the co-author of more than twenty journal articles and conference papers, as well as three patents.

Email: morisette@purdue.edu

Prof. Cooper is Jai N. Gupta Professor Emeritus of Electrical and Computer Engineering at Purdue University and President of Sonrisa Research, Inc., a non-profit corporation doing government contract research. He is a Life Fellow of the IEEE, a coauthor of the textbook Fundamentals of Silicon Carbide Technology (Wiley, 2014), and served as Technical Program Co-Chair for ICSCRM-2017 in Washington, DC.

Email: cooperj@purdue.edu

Koushik ia a Senior Research Associate with the School of ECE at Purdue University. He received his PhD degree in Condensed Matter Physics from Indian Institute of Science, Bengaluru, India in 2014 studying electrical noise phenomenon in 2D devices and thin films. Subsequently, Koushik was a post-doctoral fellow at Harvard and Purdue exploring oxide-based semiconductors and demonstrating their application in non-volatile memory. Prior to his PhD, Koushik worked as a RF Engineer with Indian Space Research Organization, Bengaluru, India.
His current research is focused on fabrication and characterization of SiC based devices particularly studying the interfacial properties of the semiconductor / gate dielectric using electrical and material-based techniques.

Research: Fabrication and characterization of SiC devices

Swati obtained her bachelor's degree in electrical and electronics engineering from BITS Pilani, Goa, India, in 2018. She then joined the Indian Institute of Science, Bengaluru, and was positioned at the characterization end of the technology development team for building reliable, high-power Gallium Nitride-based devices. She joined the Master's program at Purdue in August 2019. Soon after, she started working in the Silicon Carbide group at Birck. Her current work focuses on the development of vertical tri-gate power mosfets in 4H-SiC.

Research: Tri-gate

Rajni is pursuing her PhD in Electrical Engineering at Purdue University. In 2018, she completed her B.E. in Electronics and Communication Engineering from Ramaiah Institute of Technology, Bangalore, India. She worked as ASIC Engineer at Juniper Networks for a year before joining Purdue in Fall 2019 and later completed her MS in ELectrical Engineering from Purdue University. Currently, her research includes fabrication and characterization of highly scaled, fully self-aligned 4H-SiC trench MOSFETs (IMOSFET Gen -2). She is also working on improving channel mobility, threshold instability and robustness of 650V SiC power MOSFETs with different gate oxide deposition methods.

Research: IMOSFET (Gen-2), Deposited oxide, Post-oxidation anneal, RIE etching, waffle substrate

Manas received his bachelor's in Electronics and Telecommunication in 2020 from Vishwakarma Institute of Information Technology, Pune, India. He completed Master's in Electrical and Computer Engineering with specialization in Mocroelectronics and Nanotechnology from Purdue University in Spring 2023. He joined the Purdue EBG group as Research Assitant in Nov 2021. Manas is currently pursuing a PhD with focus on fabrication and characterization of long channel SiC-MOSFET and scaled-DMOSFET.

Research: Long channel SiC MOSFET, scaled DMOSFET

Thomas attained his bachelor’s degree in Electrical Engineering at the University of Notre Dame, in 2023. Throughout his undergraduate years, he has done research on metal halide perovskites for photovoltaic applications and, more recently, on high-performance Gallium Nitride vertical transistors. In the summer of 2022, he joined the Purdue WBG group where he performed 2-D numerical simulations on a SiC IMOSFET aiming to optimize its performance. He is currently pursuing a direct PhD at Purdue University focusing his studies on SiC power devices.

Research:SiC power device, Simulation

Julie is a MS student in ECE at Purdue University. Julie joined the Purdue after graduating from Hope College with a bachelor’s in computer engineering in 2023. She is currently working towards her master’s in electrical and computer engineering. Her research primarily focuses on improving electron mobility on trench SiC power mosfets and devices characterization. In her free time, Julie enjoys running, seeing friends and family, and roller blading.

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Taasin is a MS student in ECE at Purdue University. Taasin completed is BS in Electrical and Computer Engineering from Temple university in Philadelphia. Following graduation, he joined Nidec Motors as a Test Design engineer where he primarily developed software and hardware for Automated Test Equipment. Taasin is currently pursuing an MS in Electrical and Computer Engineering at Purdue. As a part of the Morisette Research Group, he is responsible for electrical characterization of a P200L semiautomatic probe station, to allow for automated testing of standard semiconductor wafers.

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Ashalata is a MS student in ECE at Purdue University.

Research:Cn