Impurities

Impurities

Our research focuses on the electronic structure of impurities in silicon for nano-electronic and quantum computing applications. Individual dopants provide 3D confinement to electrons as in quantum dots, and provide access to a number of quantum phenomena typically associated with single atoms. The impurity wave functions typically span for tens of nano meters in the crystal, giving rise to the possibility of exercising gate control. Our primary focus is to investigate quantum control of such impurities for high fidelity qubit design. Typically, We employ the semi-empirical tight-binding theory under the hood of the Nanoelectronic Modeling Tool (NEMO 3-D), and make use of large-scale parallel computing for our calculations.


Our group has worked on the following research projects.




Students (Purdue University, NCN)

Rajib Rahman, Seung Hyun Park


Advisors

Professor Gerhard Klimeck, Professor Lloyd C. L. Hollenberg


Collaborators

University of Melbourne (Center for Quantum Computer Technology), Australia

Professor Lloyd C. L. Hollenberg, Christopher C. Escott, Jared Cole, Andrew D. Greentree



Delft University of Technology, Nethelands

Professor Sven Rogge, Arjan Verdujin, Gabri Lansbergen



Princeton University, NJ, USA

Forrest R. Bradbury



Sandia National Labaratory, NM, USA

Richard P. Muller



Impurities

Impurities Home Hyperfine Interaction (HF) Mapping Donor Wavefunctions Coherent Electron Transport by Adiabatic Passage (CTAP) Spin-Orbit Stark Effect in Donors Charge Qubit Control Orbital Stark Effect in Donors D- Modeling for As Donors Metrology for a Donor Cluster Spin lifetimes for donors in Si