Journals (18)
"High-Performance Complementary III-V Tunnel FETs with Strain Engineering"
arXiv:1605.009552016Not Cited Yet
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"Switching Mechanism and the Scalability of vertical-TFETs"
, 2018, Vol. 65, No. 7, Pages 3065-30682018Not Cited Yet
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0
"Transport in vertically stacked hetero-structures from 2D materials"
IOP Journal of Physics: Conf. Series 864 (2017) 012053;doi:10.1088/1742-6596/864/1/0120532017Not Cited Yet
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"Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors"
JOURNAL OF PHYSICS-CONDENSED MATTER, Vol: 29, Issue: 40, Article Number: 405701, OCT 11, 2017;doi:10.1088/1361-648X/aa80872017Not Cited Yet
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"Surface Passivation in Empirical Tight Binding"
IEEE TRANSACTIONS ON ELECTRON DEVICES VOL. 63, Issue: 3, Page(s): 954 - 958, February (2016);doi:10.1109/TED.2016.25190422016Not Cited Yet
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"Transferable tight-binding model for strained group IV and III-V materials and heterostructures"
PHYSICAL REVIEW B 94, 045311 (2016), published 21 July 2016;doi:10.1103/PhysRevB.94.0453112016Not Cited Yet
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"Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass"
Scientific Reports 6, Article number: 31501 ;doi: 10.1038/srep31501 (2016)2016Not Cited Yet
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"Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 62, Issue: 8, Page(s): 2445 - 2449, AUGUST 2015;doi: 10.1109/TED.2015.24435642016Not Cited Yet
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"Tunnel field effect transistors in two dimensional transition metal dichalcogenides"
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 1, Page(s):12-18 , 14 April 2015 ;doi:10.1109/JXCDC.2015.24230962015Not Cited Yet
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"In-surface confinement of topological insulator nanowire surface states"
Appl. Phys. Lett., vol. 107, no. 12, pp. 121605, Sep. 2015;doi:10.1063/1.493197520150
2
"Numerical guidelines for setting up a k.p simulator with applications to quantum dot heterostructures and topological insulators"
Journal of Computational Electronics, 02 Aug 2015;doi:10.1007/s10825-015-0729-62015Not Cited Yet
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"Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution"
Phys. Rev. B 92, 085301 – Published 4 August 2015;doi:10.1103/PhysRevB.92.0853012015Not Cited Yet
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"Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface states of topological insulator nanostructures"
J. Appl. Phys. 117, 044304 (2015);doi:10.1063/1.490684220150
3
"Spin-lattice relaxation times of single donors and donor clusters in silicon"
Phys. Rev. Lett. 113, 246406, Published 11 December 2014;doi:10.1103/PhysRevLett.113.24640620140
3
"Electron transport in nano-scaled piezoelectronic devices"
Appl. Phys. Lett. 102, 193501 (2013);doi:10.1063/1.480460120130
8
"Efficient and realistic device modeling from atomic detail to the nanoscale"
Journal of Computational Electronics December 2013, Volume 12, Issue 4, pp 592-600;doi:10.1007/s10825-013-0509-020130
21
"Design principles for HgTe based topological insulator devices"
Published online 22 July, J. Appl. Phys. 114, 043702 (2013);doi: 10.1063/1.481387720130
6
"Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping"
Journal of Computational Electronics, January 2013;doi:10.1007/s10825-013-0436-020130
10
Proceedings (9)
"Transport in vertically stacked hetero-structures from 2D materials"
33rd International Conference on the Physics of Semiconductors, Beijing, China on July 31- August 5, 2016 2016Not Cited Yet
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"Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors"
2014 IEEE Silicon Nanoelectronics Workshop (SNW), 8-9 June 2014, Honolulu, HI, Page(s): 1 - 2;doi:10.1109/SNW.2014.73486062014Not Cited Yet
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"Tight Binding analysis of Si/GaAs UTBs with subatomic resolution"
17th International Workshop on Computational Electronics (IWCE), Paris, France, 20142014Not Cited Yet
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"Atomistic Tight Binding Simulations with Real Space Basis Functions: Optical Properties of Quantum Wells and Dots"
IWCE 2014, June 3-6, Paris, France2014Not Cited Yet
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"Thermal transport in topological insulator nanowires"
Techon Sept 10-11, 2013. Austin2013Not Cited Yet
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"Topological insulator states in a broken-gap GaN/InN/GaN system heterojunction"
International Conference on Nitride Semiconductors. Aug 25 -30, 2013. Washington D.C2013Not Cited Yet
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"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
IEEE SISPAD 2012, pg: 388-391, International Conference on Simulation of Semiconductor Processes and Devices, Denver, CO, Sept. 201220120
1
"Single Layer MoS2 Band Structure and Transport"
International Semiconductor Device Research Symposium (ISDRS 2011), Dec 7-11, Univ of Maryland2011Not Cited Yet
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"Tunability of the critical width of a 2D Topological Insulator"
Presented at MRS Fall Meeting 2011, SYMPOSIUM L, Boston, MA2011Not Cited Yet
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Conferences (22)
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Institute of Science and Technology (KIST), Seoul, July 9 2018, Host. Dr. Kwang-Reol Lee20180
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"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, July 6 2018, Host Prof. Mincheol Shin20180
0
"Transport in vertically stacked hetero-structures from 2D materials"
33rd International Conference on the Physics of Semiconductors, Beijing, China on July 31- August 5, 2016 20160
0
"Atomistic Modeling of Interlayer TFETs"
2016 LEAST review, August 10 & 11, 2016, University of Notre Dame20160
0
"Atomistic Modeling of WTe-MoS2 Interlayer TFETs"
TECH CON 2016, Sept. 11 - Tuesday, Sept. 13, 2016, Renaissance Austin Hotel, Austin, TX, United States20160
0
"Computational Study of Strain-Engineered III-V Tunneling Transistors"
Progress In Electromagnetics Research Symposium (PIERS), August, 2016, Shanghai, China20160
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"STEEP Transistor Modeling with NEMO5"
Steep Transistors Workshop, University of Notre Dame, Notre Dame, IN, October 5-6, 201520150
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"Transferable tight binding model for strained group IV and III-V heterostructure"
International Workshop on Computational Electronics (IWCE), West lafayette, USA, 201520150
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"Topological Insulator Modeling within Atomistic Nanoelectronic Modeling"
NEMO Representations, Workshop on the modeling of Topological Insulators and Majorana Systems, Delft Technical University, Sept 22-23, 201420140
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"Transport properties of 2D material transistors"
17th International Workshop on Computational Electronics (IWCE), Paris, France, 201420140
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"Transport Properties of 2D Material Transistors"
TECHON 2014, October 1-3, 2014, Santa Clara, CA20140
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"Atomistic Simulation of Steep Subthreshold Slope Bi-layer MoS2 Transistors"
Poster Session, 2014 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI USA June 8-9, 201420140
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"Atomistic Tight-binding Modeling of III-Nitride Materials and Field Effect Transistors"
2014 LEAST (Center for Low Energy Systems Technology) Annual Review, August 12 - 14, 2014 , University of Notre Dame.20140
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"Tight Binding modeling of monolayer MoS2 and ilayer graphene devices"
2013 LEAST (Center for Low Energy Systems Technology) Annual Review, August 14 & 15, 2013 , University of Notre Dame.20130
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"Tight-Binding Modeling of Intermediate Valence Compound SmSe for Piezoelectronic Devices"
16th International Workshop on Computational Electronics (IWCE), June 2013, Nara, Japan20130
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"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
SISPAD 2012, International Conference on Simulation of Semiconductor Processes and Devices, Denver, CO, Sept. 201220120
0
"Quantum Transport in Tunneling Field Effect Transistors"
MIND review, student poster, South Bend, IN, Aug. 201220120
0
"Atomistic Simulation of GaSb/InAs Tunneling Field Effect Transistor"
TECHCON ,September 10-11 2012, Austin TX20120
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"Generation of Empirical Tight Binding Parameters from ab-initio simulations"
IWCE 2012, May 21-22, 2012, University of Wisconsin - Madison20120
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"Quantum Transport in GaSb/InAs Nanowire TFET with Semiclassical Charge Density"
IWCE 2012, May 21-22, 2012, University of Wisconsin - Madison20120
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"Tunability of the critical width of a 2D Topological Insulator"
Presented at MRS Fall Meeting 2011, SYMPOSIUM L, Boston, MA20110
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"Single Layer MoS2 Band Structure and Transport"
2011 International Semiconductor Device Research Symposium (ISDRS 2011), Dec 7-11, Univ of Maryland20110
0
Others (2)
"Atomistic Modeling of 2D Material Based Steep Subthreshold Field Effect Transistors"
LEAST annual review, South Bend, IN, 201420140
0
"Quantum Transport in Tunneling Field Effect Transistors"
Nanoelectronic Research Initiative (NRI) review, MIND center (Midwest Institute for Nanoelectronics Discovery), Notre Dame, Aug. 15, 201220120
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