Journals (37)
"NEMO5: Achieving High-end Internode Communication for Performance Projection Beyond Moore's Law"
arXiv:1510.046862015Not Cited Yet
0
0
"Thermal boundary resistance predictions with non-equilibrium Green's function and molecular dynamics simulations"
Applied Physics Letters, Vol. 115, Issue 23 (2019);doi :10.1063/1.51250372019Not Cited Yet
0
0
"Band-tail Formation and Band-gap Narrowing Driven by Polar Optical Phonons and Charged Impurities in Atomically Resolved III-V Semiconductors and Nanodevices"
Physical Review Applied 12, 044045, October 2019;doi: 10.1103/PhysRevApplied.12.0440452019Not Cited Yet
0
0
"NemoViz: A visual interactive system for atomistic simulations design"
Visualization in Engineering, November 2018, Volume 6, Number 6;doi:10.1186/s40327-018-0067-42018Not Cited Yet
0
0
"Atomistic tight-binding study of contact resistivity in Si/SiGe PMOS Schottky contacts"
IEEE Transactions on Electron Devices, 2018 (Early Access), Pages 1-12018Not Cited Yet
0
0
"Explicit screening full band quantum transport model for semiconductor nanodevices"
Journal of Applied Physics 123, 244501 (2018);https://doi.org/10.1063/1.50314612018Not Cited Yet
0
0
"Atomistic Modeling trap-assisted tunneling in hole tunnel FETs"
Journal of Applied Physics 123 (2018);doi: 10.1063/1.50187372018Not Cited Yet
0
0
"Control of interlayer delocalization in 2H transition metal dichalcogenides"
Journal of Applied Physics 122, 224302 (2017);doi:10.1063/1.50059582017Not Cited Yet
0
0
"Quantitative Multi-Scale, Multi-Physics Quantum Transport Modeling of GaN-Based Light Emitting Diodes"
Phys. Status Solidi A 2017, 1700662, 27 December 2017;doi:10.1002/pssa.2017006622017Not Cited Yet
0
0
"Incoherent transport in NEMO5: realistic and efficient scattering on phonons"
Journal of Computational Electronics, pp 1–7, 2016;doi:10.1007/s10825-016-0845-y2016Not Cited Yet
0
0
"Büttiker probes for dissipative phonon quantum transport in semiconductor "
APPLIED PHYSICS LETTERS 108, 113107 (2016);doi:10.1063/1.49443292016Not Cited Yet
0
0
"General Retarded Contact Self-energies in and beyond the Non-equilibrium Green’s Function Method"
Journal of Physics: Conference Series Volume 696, conference 1, 012019 (2016)2016Not Cited Yet
0
0
"Surface Passivation in Empirical Tight Binding"
IEEE TRANSACTIONS ON ELECTRON DEVICES VOL. 63, Issue: 3, Page(s): 954 - 958, February (2016);doi:10.1109/TED.2016.25190422016Not Cited Yet
0
0
"Transferable tight-binding model for strained group IV and III-V materials and heterostructures"
PHYSICAL REVIEW B 94, 045311 (2016), published 21 July 2016;doi:10.1103/PhysRevB.94.0453112016Not Cited Yet
0
0
"Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 62, Issue: 8, Page(s): 2445 - 2449, AUGUST 2015;doi: 10.1109/TED.2015.24435642016Not Cited Yet
0
0
"Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations"
J. Appl. Phys. 117, 174312 (2015);doi:10.1063/1.49190912015Not Cited Yet
0
0
"In-surface confinement of topological insulator nanowire surface states"
Appl. Phys. Lett., vol. 107, no. 12, pp. 121605, Sep. 2015;doi:10.1063/1.493197520150
2
"Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution"
Phys. Rev. B 92, 085301 – Published 4 August 2015;doi:10.1103/PhysRevB.92.0853012015Not Cited Yet
0
0
"Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface states of topological insulator nanostructures"
J. Appl. Phys. 117, 044304 (2015);doi:10.1063/1.490684220150
3
"An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation"
JOURNAL OF APPLIED PHYSICS 115, 123703 (2014), published online 25 March 2014;doi: 10.1063/1.486897720140
4
"An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures II - Effect of Confinement and Homogeneous Strain on Cu Conductance"
J. Appl. Phys. 115, 123703 (2014);doi: 10.1063/1.48689772014Not Cited Yet
0
0
"Design and Simulation of Two-dimensional Superlattice Steep Transistors"
IEEE ELECTRON DEVICE LETTERS., vol. 35, Issue: 12, Page(s): 1212 - 1214, Dec. 2014;doi:10.1109/LED.2014.236459320140
2
"Non-equilibrium Green's functions method: Non-trivial and disordered leads"
Appl. Phys. Lett. 105, 213502 (2014);doi:10.1063/1.49025042014Not Cited Yet
0
0
"Electron transport in nano-scaled piezoelectronic devices"
Appl. Phys. Lett. 102, 193501 (2013);doi:10.1063/1.480460120130
8
"Engineering Nanowire n-MOSFETs at Lg < 8nm"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 60, Issue: 7, Page(s): 2171 - 2177, July 2013;doi: 10.1109/TED.2013.22638062013Not Cited Yet
0
0
"Simulation Study of Thin-Body Ballistic n-MOSFET Involving Transport in Mixed Γ-L valleys"
IEEE Electron Device Letters, vol.34, Issue: 9, Page(s): 1196 - 1198, Sept. 2013;doi: 10.1109/LED.2013.22730722013Not Cited Yet
0
0
"Efficient and realistic device modeling from atomic detail to the nanoscale"
Journal of Computational Electronics December 2013, Volume 12, Issue 4, pp 592-600;doi:10.1007/s10825-013-0509-020130
21
"Probing scattering mechanisms with symmetric quantum cascade lasers"
Accepted February 14, Published: March 14, 2013 in Optics Express, Vol. 21, Issue 6, pp. 7209-7215;doi:10.1364/OE.21.00720920130
15
"Design principles for HgTe based topological insulator devices"
Published online 22 July, J. Appl. Phys. 114, 043702 (2013);doi: 10.1063/1.481387720130
6
"Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping"
Journal of Computational Electronics, January 2013;doi:10.1007/s10825-013-0436-020130
10
"Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy"
accepted in Optics Express, 2012, Published August 27, 2012, Vol. 20, Issue 18, pp. 20647-20658 (2012);doi:10.1364/OE.20.02064720120
17
"Design of three-well indirect pumping terahertz quantum cascade lasers for high optical gain based on nonequilibrium Green's function analysis"
Appl. Phys. Lett. 100, 122110 (2012);doi:10.1063/1.369767420120
6
"Does the low hole transport mass in <110> and <111> Si nanowires lead to mobility enhancements at high field and stress: a self-consistent tight-binding study"
Journal of Applied Physics Vol.111, Issue 12 published online 26 June 2012;doi: 10.1063/1.472980620110
6
"Enhanced valence force field model for the lattice properties of gallium arsenide"
Physical Review B, Vol. 84, pg. 155204, Published 17 October 2011;doi :10.1103/PhysRevB.84.1552042011Cited by 8 / 17 Downloads
17
8
"NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool"
IEEE Transactions on Nanotechnology, Vol. 10, Issue: 6, Page(s): 1464 - 1474, Nov. 2011;doi:10.1109/TNANO.2011.21661642011Cited by 52 / 12 Downloads
12
52
"Design concepts of terahertz quantum cascade lasers: Proposal for terahertz laser efficiency improvements"
Appl. Phys. Lett. 97, 261106 (2010);doi:10.1063/1.35241972010Cited by 23 / 51 Downloads
51
23
"Adaptive quadrature for sharply spiked integrands"
Journal of Computation Electronics vol 9 , No. 3-4, 252-255 (2010);doi : 10.1007/s10825-010-0338-32010Cited by 1 / 32 Downloads
32
1
Proceedings (24)
"Electron-only explicit screening quantum transport model for semiconductor nanodevices"
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices, September 24-26, 2018, Austin, TX2018Not Cited Yet
0
0
"NEMO5: Multi-Scale, Multi-Physics, Atomistic Modeling of Non-Equilibrium Processes in Nanometer-Scaled Compound Materials For Active Devices and Global Impact on nanoHUB.org"
Collaborative Conference on Materials Research (CCMR) 2018, 25 - 29 June 2018, Incheon/Seoul, South Korea2018Not Cited Yet
0
0
"Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations: Can we achieve the 10−9Ω·cm? target?"
Proceedings of the 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), Pages 83-842017Not Cited Yet
0
0
"A high-current InP-channel triple heterojunction tunnel transistor design "
Proceedings of the 75th Device Research Conference (DRC), University of Notre Dame (Indiana, USA) from June 25-28, 2017;doi:10.1109/DRC.2017.79994372017Not Cited Yet
0
0
"NEMO5: realistic and efficient NEGF simulations of GaN light-emitting diodes"
Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 1009813 (February 22, 2017);doi:10.1117/12.22562362017Not Cited Yet
0
0
"NEMO5: Predicting MoS2 Heterojunctions"
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);doi: 10.1109/SISPAD.2016.76051872016Not Cited Yet
0
0
"A Tunnel FET Design for High-Current, 120 mV Operation"
2016 IEEE International Electron Devices Meeting, December 3-7, 2016, San Francisco, CA;doi:10.1109/IEDM.2016.78385112016Not Cited Yet
0
0
"Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors"
Device Research Conference (DRC), June, 2016, Newark, Delaware, USA;doi:10.1109/DRC.2016.75484242016Not Cited Yet
0
0
"Mode space tight binding model for ultra-fast simulations of III-V nanowire MOSFETs and heterojunction TFETs"
International Workshop on Computational Electronics (IWCE 2015) September 2, 2015 West Lafayette, Indiana USA, Page(s): 1 - 3;doi:10.1109/IWCE.2015.73019342015Not Cited Yet
0
0
"NEMO5: Why must we treat topological insulator nanowires atomically?"
IWCE, September 2, 2015 West Lafayette, Indiana USA2015Not Cited Yet
0
0
"Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors"
2014 IEEE Silicon Nanoelectronics Workshop (SNW), 8-9 June 2014, Honolulu, HI, Page(s): 1 - 2;doi:10.1109/SNW.2014.73486062014Not Cited Yet
0
0
"Quantum Transport in NEMO5: Algorithm Improvements and High Performance Implementation"
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, Japan, September 9-11, 2014, Page(s): 361 - 364;doi:10.1109/SISPAD.2014.69316382014Not Cited Yet
0
0
"Tight Binding analysis of Si/GaAs UTBs with subatomic resolution"
17th International Workshop on Computational Electronics (IWCE), Paris, France, 20142014Not Cited Yet
0
0
"Atomistic Tight Binding Simulations with Real Space Basis Functions: Optical Properties of Quantum Wells and Dots"
IWCE 2014, June 3-6, Paris, France2014Not Cited Yet
0
0
"Thermal transport in topological insulator nanowires"
Techon Sept 10-11, 2013. Austin2013Not Cited Yet
0
0
"Topological insulator states in a broken-gap GaN/InN/GaN system heterojunction"
International Conference on Nitride Semiconductors. Aug 25 -30, 2013. Washington D.C2013Not Cited Yet
0
0
"Atomistic Simulation on Gate-recessed InAs/GaSb TFETs and Performance Benchmark"
Device Research Conference (DRC),Page(s): 145 - 146, June 2013, Notre Dame, IN, USA;doi: 10.1109/DRC.2013.66338352013Not Cited Yet
0
0
"Scaling Effect on Specific Contact Resistivity in Nanoscale Metal-Semiconductor Contacts"
Device Research Conference (DRC), University of Notre Dame, IN, June 23-26, 2013, Page(s): 125 - 126, and International Workshop on Computational Electronics (IWCE), Nara, Japan, June 4-7, 2013;doi: 10.1109/DRC.2013.66338252013Not Cited Yet
0
0
"Nonequilibrium Green’s function method: Algorithm for regular and irregular leads"
16th International Workshop on Computational Electronics, Nara, Japan June 4-7, 20132013Not Cited Yet
0
0
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
IEEE SISPAD 2012, pg: 388-391, International Conference on Simulation of Semiconductor Processes and Devices, Denver, CO, Sept. 201220120
1
"The Nanoelectronic Modeling Tool NEMO 5: Capabilities, Validation, and Application to Sb-Heterostructures"
proceedings of the IEEE Device Research Conference (DRC), June 20-22 2011;doi:10.1109/DRC.2011.599440420110
1
"Tunability of the critical width of a 2D Topological Insulator"
Presented at MRS Fall Meeting 2011, SYMPOSIUM L, Boston, MA2011Not Cited Yet
0
0
"Contact Modeling and Analysis of InAs HEMT Transistors"
IEEE proceedings of IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2011), Oct. 18-21, 2011 at The Shilla Jeju, Korea2011Cited by 1 / 26 Downloads
26
1
"Rough interfaces in THz quantum cascade lasers"
International Workshop for Computational Electronics, Publication Year: 2010 , Page(s): 1 - 4, Pisa, Italy;doi:10.1109/IWCE.2010.567798620100
1
Conferences (69)
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Institute of Science and Technology (KIST), Seoul, July 9 2018, Host. Dr. Kwang-Reol Lee20180
0
"nanoHUB.org – always “on”"
4th Workshop on Supercomputing for Computational Bio/Nano/Materials Science, Korea Institute of Science Technology Information (KISTI), Daejeon, Korea, July 10-11, 201820180
0
"NEMO5: Multi-Scale, Multi-Physics, Atomistic Modeling of Superlattice LEDs and Global Impact on nanoHUB.org"
19th International Symposium on the Physics of Semiconductors and Applications (ISPSA 2018), Jeju, Korea, July 1- 5, 201820180
0
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, July 6 2018, Host Prof. Mincheol Shin20180
0
"NEMO5: Multi-Scale, Multi-Physics, Atomistic Modeling of Non-Equilibrium Processes in Nanometer-Scaled Compound Materials For Active Devices and Global Impact on nanoHUB.org"
Collaborative Conference on Materials Research (CCMR) 2018, 25 - 29 June 2018, Incheon/Seoul, South Korea20180
0
"Electron-only explicit screening quantum transport model for semiconductor nanodevices"
International Conference on Simulation of Semiconductor Processes and Devices, September 24-26, 2018, Austin, TX20180
0
"NEMO5: A Parallelized Multi-Scale and Multi-Physics Nanodevices Simulation Software"
Presentation at SIAM Conference on Computational Science and Engineering, Atlanta, GA, February 27-March 3, 201720170
0
"NEMO5: realistic and efficient NEGF simulations of GaN light-emitting diodes"
Invited talk, SPIE Photonics West OPTO 2017 (Physics and Simulation of Optoelectronic Devices XXV conference), January 30 – February 2, San Francisco, CA20170
0
"Non-local scattering with a new recursive nonequilibrium green´s function method"
International Workshop on Computational Nanotechnology (IWCN), Leeds, United Kingdom, 5-9 June, 2017 20170
0
"New insights into III-Nitride LED designs through quantitative modeling"
E-MRS ICNS 12 Meeting, symposium B : Optical devices, Congress Center in Strasbourg (France), July 24-28, 201720170
0
"Assessment of Si/SiGe PMOS Schottky contacts through atomistic tight binding simulations: Can we achieve the 10−9Ω·cm? target?"
2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO), Pittsburgh, PA, July 25-28, 201720170
0
"A high-current InP-channel triple heterojunction tunnel transistor design"
75th Device Research Conference (DRC), University of Notre Dame (Indiana, USA) from June 25-28, 201720170
0
"Nanoelectronic Modeling on Blue Waters with NEMO5"
Presentation at Blue Waters Symposium 2017, Sunriver, OR, May 16-19, 201720170
0
"Stark effect in the photoluminescence of transition metal dichalcogenide structures"
International Workshop on Computational Nanotechnology (IWCN), Leeds, United Kingdom, 5-9 June, 2017 20170
0
"Non-equilibrium Green's function method: Band tail formation in non-local polar optical phonon scattering"
International Workshop on Computational Nanotechnology (IWCN), Leeds, United Kingdom, 5-9 June, 2017 20170
0
"Multi-scale nonequilibrium green's function method for LEDs: Balance of thermalization and tunneling"
International Workshop on Computational Nanotechnology (IWCN), Leeds, United Kingdom, 5-9 June, 2017 20170
0
"Nonequilibrium Green's function method: Performance prediction of band-to-band tunneling devices in electron-only representation"
International Workshop on Computational Nanotechnology (IWCN), Leeds, United Kingdom, 5-9 June, 2017 20170
0
"Post-Moore Nanoscale Logic Devices"
ALCF Aurora Early Science Program, 201620160
0
"Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors"
Device Research Conference (DRC), June, 2016, Newark, Delaware, USA20160
0
"NEMO5: Predicting MoS2 Heterojunctions"
International Conference on Simulation of Semiconductor Processes and Devices 2016, Nuremberg, Germany, September 6-820160
0
"MPI + hStreams in NEMO5: Partitioning Xeon Phi"
Presentation at the Intel Xeon Phi User Group 2016 Annual Meeting, Chicago, IL20160
0
"NEMO5, Xeon Phi and hStreams: Physics of Ultrascaled 2D Nanotransistors"
Poster session presented at SC ’16 the International Conference for High Performance Computing, Networking, Storage and Analysis, Salt Lake City, UT, 201620160
0
"A Tunnel FET Design for High-Current, 120 mV Operation"
IEEE International Electron Devices Meeting, December 3-7, 2016, San Francisco20160
0
"Multi-Scale, Multi-Physics NEGF Quantum Transport for Nitride LEDs"
16th International Conference on Numerical Simulation of Optoelectronic Devices, July 11-15, 2016, Sydney, Australia20160
0
"Development of the NEMO Tool Suite From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Arizona State, Electrical Engineering Advanced Semiconductor Device Class, Host: Prof. Dragica Vasileska, April 20, 201520150
0
"NEMO5: Why must we treat topological insulator nanowires atomically?"
International Workshop on Computational Electronics (IWCE 2015) September 2, 2015 West Lafayette, Indiana USA20150
0
"Transferable tight binding model for strained group IV and III-V heterostructure"
International Workshop on Computational Electronics (IWCE), West lafayette, USA, 201520150
0
"Topological Insulator Modeling within Atomistic Nanoelectronic Modeling"
NEMO Representations, Workshop on the modeling of Topological Insulators and Majorana Systems, Delft Technical University, Sept 22-23, 201420140
0
"Transport properties of 2D material transistors"
17th International Workshop on Computational Electronics (IWCE), Paris, France, 201420140
0
"Transport Properties of 2D Material Transistors"
TECHON 2014, October 1-3, 2014, Santa Clara, CA20140
0
"Atomistic Simulation of Steep Subthreshold Slope Bi-layer MoS2 Transistors"
Poster Session, 2014 IEEE Silicon Nanoelectronics Workshop, Hilton Hawaiian Village, Honolulu, HI USA June 8-9, 201420140
0
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
Synopsys, Oct 18, 2013, Host: Dr. Victor Moroz20130
0
"Development of the NEMO Tool Suite From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Embedded tutorial on FinFET: A Multifaceted Perspective for CAD Engineers , International Conference on Computer Aided Design, Nov 18-21, 2013, San Jose, CA20130
0
"Taking Nanoelectronics to the Next Level Through NEMO and nanoHUB.org"
CMSI International Symposium 2013: Extending the power of computational materials sciences with K-computer, Tokyo, Japan, Oct 21 -22, 2013 20130
0
"Tight-Binding Modeling of Intermediate Valence Compound SmSe for Piezoelectronic Devices"
16th International Workshop on Computational Electronics (IWCE), June 2013, Nara, Japan20130
0
"Nonequilibrium Green’s function method: Algorithm for regular and irregular leads "
TECHCON, Sep 8-11 September, 2013, Austin, TX20130
0
"Atomistic Modeling of CBRAM Switching Behavior"
2013 FAME (Function Accelerated nanoMaterial Engineering) Annual Review, poster presentation, Oct. 15 & 16, 2013, Los Angeles, CA20130
0
"Spin-dependent Peltier effect in 3D topological insulators"
Accepted for presentation at 2013 APS March meeting, Baltimore MD20130
0
"What is different below 10 nm?"
Invited presentation at the NNIN Symposium on Frontiers in Nanoscale Transistors and Electronics, Santa Barbara, CA, February 6, 2012.20120
0
"Electric tuning of topological insulator states and their surface scattering"
APS March Meeting 2012, Boston, US20120
0
"Indirect Pumping THz InGaAs/InAlAs Quantum-Cascade Lasers with Coupled-Well Injectors grown by MOVPE"
Presented at the International Quantum Cascade Laser School and Workshop 201220120
0
"Atomistic simulation of electronic and transport properties of topological insulator based devices"
TECHCON, September 10-11 2012, Austin TX20120
0
"Geometric effects on surface states in topological insulator Bi_{2}Te_{3 } nanowire"
APS March Meeting 2012, Boston, US20120
0
"Atomistic Simulation of current-voltage characteristics of topological insulator Bi2Te3 ultra-thin bodies"
TECHCON, September 10-11 2012, Austin, TX20120
0
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool"
SISPAD 2012, International Conference on Simulation of Semiconductor Processes and Devices, Denver, CO, Sept. 201220120
0
"Quantum Transport in Tunneling Field Effect Transistors"
MIND review, student poster, South Bend, IN, Aug. 201220120
0
"Atomistic Simulation of GaSb/InAs Tunneling Field Effect Transistor"
TECHCON ,September 10-11 2012, Austin TX20120
0
"Geometric effects on surface states of Bismuth Telluride nanowires"
submitted to APS March Meeting, Feb 27 - Mar 2 2012, Boston, MA20120
0
"Design of high-current L-valley GaAs/AlAs0:56Sb0:44/InP (111) ultra-thin-body nMOSFETs"
International Conference on Indium Phosphide and Related Materials, University of California at Santa Barbara, Aug 27-30 201220120
0
"Modelling of Ge/InGaAs FinFETs"
MSD Annual Review , MIT (Boston) MA, May 1-2 201220120
0
"MOSFETs near end of the roadmap "
MSD Annual Review , MIT (Boston) MA, May 1-2 2012 20120
0
"Generation of Empirical Tight Binding Parameters from ab-initio simulations"
IWCE 2012, May 21-22, 2012, University of Wisconsin - Madison20120
0
"Efficient solution algorithm of non-equilibrium Green's functions in atomistic tight binding representation"
IWCE 2012, May 21-22, 2012, University of Wisconsin - Madison20120
0
"From Atoms to Devices: NEMO5"
Focus Center Research Program (FCRP) Proposers’ Conference, Dallas, TX May, 2012. 20120
0
"Contact-to-channel Resistance Modeling in HEMT Devices"
MSD review May 2012, Boston. 20120
0
"Double Gate Ge p-FinFET Performance: Dependence on Orientation, Strain and Fin Width Thickness"
TECHCON 2012, Austin TX,Sept 10-11 201220120
0
"Geometric effects on surface states of 3D-TI Bismuth Telluride quantum wells"
APS March Meeting,Feb 27th - March 2nd, 201220120
0
"Quantum Transport in GaSb/InAs Nanowire TFET with Semiclassical Charge Density"
IWCE 2012, May 21-22, 2012, University of Wisconsin - Madison20120
0
"Full band electron band structure calculation with empirical tight binding for topological insulators and broken gap devices"
IWCE 2012, May 21-22, 2012, University of Wisconsin - Madison20120
0
"The Nanoelectronic Modeling Tool NEMO 5: Capabilities, Validation, and Application to Advanced Transistor Structures"
MSD/FENA Teleseminar Series, Dec. 15 2011.20110
0
"High Performance Computational Nanotechnology for Research and Education on nanoHUB.org"
TeraGrid Conference, July 18-22, 2011, Salt Lake City.20110
0
"The Nanoelectronic Modeling Tool NEMO5: Capabilities, Validation, and Application to Sb-Heterostructures"
Device Research Conference (DRC) 2011, Santa Barbara CA20110
0
"Topological Insulator Application: All-Electrical Switching of Conductance"
Presented at MRS Fall Meeting 2011, Boston, MA20110
0
"Atomistic Quantum Transport Modeling in Band-to-band Tunneling Transistors"
MIND review, student poster, South Bend, IN, Aug. 201120110
0
"Tunability of the critical width of a 2D Topological Insulator"
Presented at MRS Fall Meeting 2011, SYMPOSIUM L, Boston, MA20110
0
"Contact Modeling and Analysis of InAs HEMT Transistors"
IEEE proceedings of IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2011), Oct. 18-21, 2011 at The Shilla Jeju, Korea20110
0
"Terahertz quantum cascade lasers: Conceptual design improvements"
Nanoelectronic Devices for Defense and Security Conference, Aug 29 to Sept. 1, 2011.20110
0
"Conceptual design improvements for terahertz quantum cascade lasers needed for molecule detection"
Nanoelectronic Devices for Defense & Security (NANO-DDS) conference. August 3120110
0
"Non-equilibrium Green"
International Workshop for Computational Electronics, October 27th-29th, Pisa, Italy (2010)20100
0
Others (3)
"Advanced Quantum Device Simulation using NEMO5"
Semiconductor Research Corporation Review, Santa Barbara, CA, April 8 - 11, 201320130
0
"Quantum Transport in Tunneling Field Effect Transistors"
Nanoelectronic Research Initiative (NRI) review, MIND center (Midwest Institute for Nanoelectronics Discovery), Notre Dame, Aug. 15, 201220120
0
"Advanced Simulations of Nanoelectronic Devices with NEMO5"
Semiconductor Research Corporation Review, Santa Barbara, Ca, April, 201220120
0