Journals (11)
"Two-electron states of a group V donor in silicon from atomistic full configuration interaction"
Phys. Rev. B 97, 195301 – Published 2 May 2018;doi: 10.1103/PhysRevB.97.1953012018Not Cited Yet
"Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision"
Nature Nanotechnology 11, 763–768 (2016);doi:10.1038/nnano.2016.832016Not Cited Yet
"Strain and electric field control of hyperfine interactions for donor spin qubits in silicon"
PHYSICAL REVIEW B 91, 245209 (2015), Published 25 June 2015;doi:10.1103/PhysRevB.91.2452092015
"Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory"
Journal of Physics: Condensed Matter, 27 (2015) 154207 (7pp);doi:10.1088/0953-8984/27/15/1542072015
"The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties"
IOP Nanotechnology, Volume 23, Number 16, Published 2 April 2012;doi:10.1088/0957-4484/23/16/1652022012
"Experimental and Theoretical Study of Polarization-Dependent Optical Transitions in InAs Quantum Dots at Telecommunication-Wavelengths (1300-1500 nm)"
Journal of Applied Physics 83 19 pags 104510, 26 May 2011 ;doi:10.1063/1.35871672011Cited by 21 / 63 Downloads
"Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks"
Physical Review B 84, 115321, published September 23, 2011;doi: 10.1103/PhysRevB.84.1153212011Cited by 30 / 15 Downloads
"Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations"
Nanotechnology 22 (2011) 315709 (14pp);doi:10.1088/0957-4484/22/31/3157092011Cited by 18 / 26 Downloads
"Moving towards nano-TCAD through multi-million atom quantum dot simulations matching experimental data"
IEEE Transactions on Nanotechnology, Vol. 8, Issue: 3, Page(s): 330 - 344, May 2009;doi : 10.1109/TNANO.2008.20119002009Cited by 30 / 21 Downloads
"Multimillion Atom Simulations with NEMO 3-D"
Springer Encyclopedia for Complexity, pp 5745-5783, 2008, Published 2009;doi:10.1007/978-0-387-30440-3_3432008Cited by 10 / 130 Downloads
"Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part II - Applications"
IEEE Transactions on Electron Devices, Vol. 54, Issue 9, Page(s):2090 - 2099, Sept. 2007, (INVITED) Special Issue on Nanoelectronic Device Modeling;doi : 10.1109/TED.2007.9048772007Cited by 83 / 236 Downloads
Proceedings (6)
"Quantum Confined Stark Shift and Ground State Optical Transition Rate in [100] Laterally Biased InAs/GaAs Quantum Dots"
to appear in IEEE proceedings of the 13th International Workshop on Computational Electronics, Tsinghua University, Beijing, May 27-29 2009.Page(s):1-4;doi:10.1109/IWCE.2009.50911402009Cited by 3 / 275 Downloads
"Atomistic tight binding study of strain-reduced confinement potentials in identical and non-identical InAs/GaAs vertically stacked quantum dots"
8th IEEE Conference on Nanotechnology, 2008. NANO '08. Aug. 18-21 2008 Page(s):541-544;doi : 10.1109/NANO.2008.1612008
"Strain-Engineered Self Organized InAs/GaAs Quantum Dots for Long Wavelength (1.3-1.5um) Optical Applications"
Proceedings of ICPS 2008 (International Conference on the Physics of Semiconductors), Rio de Janeiro, Brazil, July 27-Aug 1, 2008.2008Not Cited Yet
"Atomistic Simulation of Non-Degeneracy and Optical Polarization Anisotropy in Pyramidal Quantum Dots"
proceedings of IEEE NEMs Jan 16-19, 2007, pgs. 937-942, Bangkok Thailand. oral presentation, 340 submission, 90% acceptance, 55% oral presentations.;doi : 10.1109/NEMS.2007.3521722007
"Symmetry Breaking and Fine Structure Splitting in Self-Assembled Zincblende Quantum Dots: Atomistic Simulations of Long-Range Strain and Piezoelectric Field"
proceedings of the 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, July 24-28 2006, AIP Conference Proceedings Volume 893, pg 849;doi: 10.1063/1.27301572006Not Cited Yet
"Strain and electronic structure interactions in realistically scaled quantum dot stacks"
proceedings of the 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, July 24-28 2006, AIP Conference Proceedings Volume 893, pg 849.;doi : 10.1063/1.27301562006
Conferences (21)
"Modeling exchange interaction in bulk and sub-surface donor pairs in silicon for two-qubit gates"
Poster Session, ARO Quantum computing program review, San Diego, Aug 10-12, 20152015
"Modeling exchange interaction in bulk and sub-surface donor pairs in silicon for two-qubit gates"
CQC2T Workshop at Kingscliff, New South Wales (NSW), Australia, February 18 - 20, 20152015
"Theoretical correlation between quantum dot composition and polarization properties"
International Conference on quantum Dots DOTS (QD2012), May 13-18 2012, Santa Fe, New Mexico, USA2012
"Polarization-resolved Optical Transitions from InAs QDs at Telecommunication Wave-lengths"
Quantum Dot Day Workshop January 10, 2011, University of Bristol, UK2011
"Wavelength engineered InAs quantum dots"
American Physical Society, March Meeting, March 15–19, 2010; Portland, Oregon (2010)2010
"NEMO 3-D and OMEN: Nanoelectronic modeling tools for advanced semiconductor device studies and their deployment on nanoHUB.org"
American Chemical Society meeting, Salt Lake City, Utah, 22-26 March 20092009
"Quantum Confined Stark Effect in Biased InAs/GaAs Quantum Dots"
13th International Workshop on Computational Electronics, Tsinghua University, Beijing, May 27-29 2009.2009
"Quantum confined stark effect in non-identical InAs/GaAs coupled quantum dots: Dependence on vertical electrical field"
American Physical Society, March Meeting, March 16-20, Pittsburgh, PA, 2009.2009
"Nano-Scale Carrier Transport on an atomistic basis using NEMO 3-D and OMEN"
Aspen Winter Conference on Unifying Themes in Condensed Matter, Jan. 12-16, 2009.2009
"Multi-Million Atom Simulations of Strain and Electronic Structure with NEMO 3-D"
Materials Science and Technology Conference and Exhibition (MS&T), Pittsburgh, October 5-9, 2008.2008
"Strain and Piezoelectric Effects on the Electronic Structure of Coupled InxGa1-xAs/GaAs Self-Assembled Quantum Dots"
American Physical Society, March Meeting 2008, March 10-14, 2008.2008
"Nanoelectronic Modeling using NEMO 3-D and OMEN and their Deployment on nanoHUB.org"
13th Advanced Heterostructures nad Nanostructures Workshop, Hapuna Beach, Hawaii, Dec. 7-12, 2008.2008
"Atomistic Tight Binding Study of Interband Light Transitions in Self-assembled InAs/GaAs Quantum Dots"
MRS Fall Meeting, Boston, Dec. 1-4, 2008.2008
"Atomistic tight binding study of strain-reduced confinement potentials in identical and non-identical InAs/GaAs vertically stacked quantum dots"
IEEE nano 2008, Arlington, TX, August 18-21, 2008;doi:10.1109/NANO.2008.1612008
"Strain-Engineered Self Organized InAs/GaAs Quantum Dots for Long Wavelength (1.3-1.5um) Optical Applications"
Proceedings of ICPS 2008 (International Conference on the Physics of Semiconductors), Rio de Janeiro, Brazil, July 27-Aug 1, 2008 (poster presentation).2008
"Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D and OMEN"
Nanoelectronics Days, Aachen, Germarny, May 13-16, 2008.2008
"Atomistic Simulation of Non-Degeneracy and Optical Polarization Anisotropy in Pyramidal Quantum Dots"
IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS), Jan 16-19, 2007, Bangkok Thailand. oral presentation, 340 submission, 90% acceptance, 55% oral presentations;doi:10.1109/NEMS.2007.3521722007
"Quantum Dot, Nanowire, ad Bandstructure Modeling and Deployment on nanoHUB.org"
International Topical Workshop "Tera- and Nano-Devices: Physics and Modeling", University of Aizu, Aizu-Wakamatsu, Japan in October 16-19, 2006.2006
"Symmetry Breaking and Fine Structure Splitting in Self-Assembled Zincblende Quantum Dots: Atomistic Simulations of Long-Range Strain and Piezoelectric Field"
28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, July 24-28 2006.2006
"Strain and electronic structure interactions in realistically scaled quantum dot stacks"
28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, July 24-28 2006.2006
"nanoHUB - nanoscience gateway to the TeraGrid"
Teragrid 2006, Indianapolis, IN June 12-15, 2006.2006