Mehdi Salmani

On the Scaling Issues and Solutions for Double Gate MOSFETs

On the Scaling Issues and Solutions for Double Gate MOSFETs M. Salmani-Jelodar, S. Kim, K. Ng & G. Klimeck

Objective:

  • Analysis of the issues at the end of ITRS roadmap (2026).
  • Finding potential solution.

Approach:

  • Full-band (tight binding) NEGF.
    • To capture confinement effects on band structure .
    • To capture source/drain tunneling accurately for short devices.
  • Series resistance by post-processing.
  • Rigorous electron-phonon scattering (for few cases).

Results:

  • Silicon can be used for next 15 years.
  • Source to drain tunneling is very important in UTB with length less than 5 nm (Fig. top left).
  • Carrier mass is not a material property anymore. It depends on material, geometry, confinement, orientation and strain.



 

Powerpoint slide as pdf, or as image below.