Han-Wei Hsiao

Han-Wei Hsiao's Biography

Han-Wei Hsiao earned his Bachelor’s degree in Earth Sciences with minor in Physics from National Taiwan Normal University, Taiwan, in 2016. He received a Master’s degree in Photonics and Optoelectronics from National Taiwan University, Taiwan, in 2018. Han-Wei explored several research fields in his early career, including the quantum Hall effect in twodimensional materials and the role of atomic hydrogen in the Saturnian system. During his Master, he built a self-consistent quantum transport simulator under non-equilibrium Green’s function (NEGF) formalism and applied it to study the characteristics of nanoscale transistors (e.g. GAA FET, FinFET, and TFET).

In 2019, Han-Wei joined Prof. Klimeck’s research group at Purdue University and started pursuing his Ph.D. degree in Electrical and Computer Engineering. His research interests mainly lie in novel electronic devices beyond Moore’s law, development of advanced methodologies or algorithms for investigating new physics in nanostructures, and spin transport in condensed matter systems. He is also interested in developing comprehensive scientific simulation tool with user-friendly interface to make cutting-edge research more accessible.

Han-Wei is currently conducting a research project on AlGaN/GaN HEMT simulation. He constructed a self-consistent electro-mechanical system based on Sentaurus Device TCAD to study the inverse piezoelectric effect. Simultaneously, he is also involved in NEMO Nanowire project, which is developing a brand new nanoHUB simulation tool powered by NEMO5 for nanowire field-effect transistors.