Journals (4)
"An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation"
JOURNAL OF APPLIED PHYSICS 115, 123703 (2014), published online 25 March 2014;doi: 10.1063/1.486897720140
4
"An Environment-dependent Semi-Empirical Tight Binding Model Suitable for Electron Transport in Bulk Metals, Metal Alloys, Metallic Interfaces and Metallic Nanostructures II - Effect of Confinement and Homogeneous Strain on Cu Conductance"
J. Appl. Phys. 115, 123703 (2014);doi: 10.1063/1.48689772014Not Cited Yet
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"Efficient and realistic device modeling from atomic detail to the nanoscale"
Journal of Computational Electronics December 2013, Volume 12, Issue 4, pp 592-600;doi:10.1007/s10825-013-0509-020130
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"Role of surface orientation on ALD Al2O3/GaAs interface structure and Fermi level pinning: a DFT study"
Applied Physics Letters 99, 093508, Published 2 September 2011;doi:10.1063/1.36248972011Not Cited Yet
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Proceedings (5)
"Scaling Effect on Specific Contact Resistivity in Nanoscale Metal-Semiconductor Contacts"
Device Research Conference (DRC), University of Notre Dame, IN, June 23-26, 2013, Page(s): 125 - 126, and International Workshop on Computational Electronics (IWCE), Nara, Japan, June 4-7, 2013;doi: 10.1109/DRC.2013.66338252013Not Cited Yet
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"The Nanoelectronic Modeling Tool NEMO 5: Capabilities, Validation, and Application to Sb-Heterostructures"
proceedings of the IEEE Device Research Conference (DRC), June 20-22 2011;doi:10.1109/DRC.2011.599440420110
1
"Enhancement of thermoelectric efficiency by uniaxial tensile stress in n-type GaAs nanowires"
proceedings of IEEE nano conference, Portland, Aug, 2011.;doi:978-1-4577-1515-02011Not Cited Yet
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"III-V FET Channel Designs for High Current Densities and Thin Inversion Layers"
proceedings of Device Research Conference (DRC), 21-23 June 2010, pg. 149 - 152;doi:10.1109/DRC.2010.555188220100
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"First Principles Study of the Energetics of Ideal GaAs Surfaces and Adsorption of Al and O as a Function of Surface Oorientation"
41st IEEE Semiconductor Interface Specialists Conference, The Catamaran Hotel, San Diego, CA, December 2-4, 20102010Not Cited Yet
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Conferences (8)
"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Institute of Science and Technology (KIST), Seoul, July 9 2018, Host. Dr. Kwang-Reol Lee20180
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"NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool From Basic Physics to Real Devices and to Global Impact on nanoHUB.org"
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, July 6 2018, Host Prof. Mincheol Shin20180
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"Atomistic Modeling of CBRAM Switching Behavior"
2013 FAME (Function Accelerated nanoMaterial Engineering) Annual Review, poster presentation, Oct. 15 & 16, 2013, Los Angeles, CA20130
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"The Nanoelectronic Modeling Tool NEMO 5: Capabilities, Validation, and Application to Advanced Transistor Structures"
MSD/FENA Teleseminar Series, Dec. 15 2011.20110
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"The Nanoelectronic Modeling Tool NEMO5: Capabilities, Validation, and Application to Sb-Heterostructures"
Device Research Conference (DRC) 2011, Santa Barbara CA20110
0
"Enhancement of thermoelectric efficiency by uniaxial tensile stress in n-type GaAs nanowires"
2011 IEEE Nanotechnology Conference, Portland, Oregon, USA, Aug 15-18, 2011;doi:10.1109/NANO.2011.614452520110
0
"III-V FET Channel Designs for High Current Densities and Thin Inversion Layers"
Device Research Conference (DRC), 21-23 June 201020100
0
"First Principles Study of the Energetics of Ideal GaAs Surfaces and Adsorption of Al and O as a Function of Surface Oorientation"
41st IEEE Semiconductor Interface Specialists Conference, The Catamaran Hotel, San Diego, CA, December 2-4, 201020100
0