Evan Wilson

High-k Dielectric Modeling

Problem:

  • As transistor dimensions shrink, fraction of channel atoms gets larger, surface chemistry have increasing impact on channel characteristics.
  • Dielectrics are not typically simulated explicitly in transistor simulation

Approach:

  • Parameterize dielectrics by fitting to DFT targets.
  • Use non-orthogonal tight-binding model to simulate crystalline, disordered oxides.