[BNC-all] Defense exam: Sambit Palit, May 30th, 10:00AM, BRK 1001
Sambit Palit
spalit at purdue.edu
Thu May 29 11:39:42 EDT 2014
Dear all,
I invite you for some free food, snacks and coffee on the occasion of my
final defense examination.
The details are as given below.
Regards,
Sambit
Date: Friday, May 30th
Time: 10:00 AM
Location: Birck 1001
Title: Charging and Breakdown in Amorphous Dielectrics: Phenomenological
Modeling Approach and Applications
Abstract:
Amorphous dielectrics of different thicknesses (nm to mm) are used in
various applications. Low temperature processing/deposition of amorphous
thin-film dielectrics often result in defect-states or electronic traps.
These traps are responsible for increased leakage currents and bulk
charge trapping in many associated applications. Additional defects may
be generated during regular usage, leading to electrical breakdown.
Increased leakage currents, charge trapping and defect
generation/breakdown are important and pervasive reliability concerns in
amorphous dielectrics.
We first explore the issue of charge accumulation and leakage in
amorphous dielectrics. Historically, charge transport in amorphous
dielectrics has been presumed, depending on the dielectric thickness,
to be either bulk dominated (Frenkel-Poole (FP) emission) or contact
dominated (Fowler-Nordheim tunneling). We develop a comprehensive
dielectric charging modeling framework which solves for the transient
and steady state charge accumulation and leakage currents in an
amorphous dielectric, and show that for intermediate thickness
dielectrics, the conventional assumption of FP dominated current
transport is incorrect, and may lead to false extraction of dielectric
parameters. We propose an improved dielectric characterization
methodology based on an analytical approximation of our model. Coupled
with ab-initio computed defect levels, the dielectric charging model
explains measured leakage currents more accurately with lesser empiricism.
We study RF-MEMS capacitive switches as one of the target applications
of intermediate thickness amorphous dielectrics. To achieve faster
analysis and design of RF-MEMS switches in particular, and
electro-mechanical actuators in general, we propose a set of fundamental
scaling relationships which are independent of specific physical
dimensions and material properties; the scaling relationships provide an
intrinsic classification of all electro-mechanical actuators. However,
RF-MEMS capacitive switches are plagued by the reliability issue of
temporal shifts of actuation voltages due to dielectric charge
accumulation, often resulting in failure due to membrane stiction. Using
the dielectric charging model, we show that in spite of unpredictable
roughness of deposited dielectrics, there are predictable shifts in
actuation voltages due to dielectric charging in RF-MEMS switches. We
also propose a novel non-obtrusive, non-contact, fully electronic
resonance based technique to characterize charging driven actuation
shifts in RF-MEMS switches which overcomes limitations in
conventionally used methods.
Finally, we look into the issue of defect generation and breakdown in
thick polymer dielectrics. Polymer materials often face premature
electrical breakdown due to high electric fields and frequencies, and
exposure to ambient humidity conditions. Using a field-driven correlated
defect generation model, coupled with a model for temperature rise due
to dielectric heating at AC stresses, we explain measured trends in
time-to-breakdown and breakdown electric fields in polymer materials.
Using dielectric heating we are able to explain the observed lifetime
and dielectric strength reduction with increasing dielectric
thicknesses. Performing lifetime measurements after exposure to
controlled humidity conditions, we find that moisture ingress into a
polymer material reduces activation barriers for chain breakage and
increases dielectric heating.
Overall, this thesis develops a comprehensive framework of dielectric
charging, leakage and degradation of insulators of different thicknesses
that have broad applications in multiple technologies.
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