[BNC-all] MONDAY MEMO, 02.19.07

Deborah Starewich dstarewi at exchange.purdue.edu
Sat Feb 17 17:11:11 EST 2007


MONDAY MEMO, FEBRUARY 19, 2007
 
 
CONTENTS
 
1. Announcements
 
1.1: Lab Staff Availability Limited 02.19 to 02.22
1.2: EntrepreneurshipWeek USA; February 21-March 4, 2007
 
 
2. Faculty/Staff/Student Awards and Honors
 
NONE
 
 
3. Seminar Announcements
 
3.1: Wednesday, 02.21.07, 2:00 PM; EE 317: ³Toward Improving the Precision
of Nanoscale Force-Displacement Measurements² by Jason Clark, Assistant
Professor, School of Electrical and Computer Engineering, School of
Mechanical Engineering, Network of Computational Nanotechnology, Purdue
University
 
3.2: Thursday, 02.22.07, 10:30 AM; BRK 1001: ³Heteroepitaxy on Nanoscale
Substrates: Applications to Solid State Lightning and Vacuum Field
Emission,² by Parijat Pramil Deb, Purdue University
 
3.3: Thursday, 02.22.07, 10:30 AM; EE 317: ³The Semiconductor Industry¹s
Nanoelectronics Research Initiative: Motivation and Challenges,² by Jeff
Welser, Director, SRC Nanoeclectronics Research Initiative, IBM Almaden
Research Center
 
 
 
4. Workshops/Conferences
 
NONE
 
 
5. Job/Fellowship opportunities
 
NONE
 
 
****************
1. Announcements
****************
 
1.1: Lab Staff Availability, 02.19 to 02.22: John Weaver announced that ost
of the engineering staff will be on a benchmarking trip this week. Although
issues are not expected, a set of contingency plans has been put together.
Please keep the following items in mind during this period: 1) If you have
an equipment problem, please do not attempt to remedy it yourself.  Wait
until the appropriate staff member returns; 2) If you have a question that
requires an immediate answer, please contact Dima Zemlyanov. He will be
covering while others on the staff are gone; 3) Stocking and inventory
issues can be handled by Jan Summers (Mary Jo¹s phone: 61173) or Aaron
Riegle: 427-4859; 4) Facility issues are to be addressed to Kurt Stull:
41410.
 
1.2: EntrepreneurshipWeek USA; February 21-March 4, 2007. ³Try Big Ideas on
for Size²; What¹s your BIG idea? Take it on! Visit
http://www.entrepreneurshipweekusa.com/home-flash.asp for additional
information.
 
 
 
 
****************
2. Awards/Honors
****************
 
NONE
 
 
************************
3. Seminar Announcements
************************
 
3.2: Wednesday, 02.21.07, 2:00 PM; EE 317: ³Toward Improving the Precision
of Nanoscale Force-Displacement Measurements² by Jason Clark, Assistant
Professor, School of Electrical and Computer Engineering, School of
Mechanical Engineering, Network of Computational Nanotechnology, Purdue
University
 
Abstract
Nanotechnology has great potential for being used to create better
medicines, materials, and sensors. With increasing interest in
nanotechnology to improve the quality of our lives, there has been an
increasing use of nanoscience tools to measure force and displacement to
understand nanoscale phenomena. However, to better exploit the physical
attributes of nanoscale phenomena for engineered nanosystems, we must be
able to explore the phenomena much more precisely than can be done today.
For instance, the atomic force microscope (AFM), which was one of the tools
used to begin the nanotechnology revolution, is the force-deflection tool
that is most widely used by nanotechnologist today. It is used to measure
forces on the order of picoNewtons (similar to the force necessary to
rupture DNA) and it is used as a positioner to measure displacements on the
order of tenths of nanometers (similar to the size of atoms). However,
precise calibration of the AFM is difficult (only about 1% precision), and
it is not sensitive enough to measure more subtle nanoscale phenomena, e.g.
forces involved in protein folding. Currently, the more subtle nanoscale
phenomena are either beyond precise verification, or worse ­ beyond
discovery. In this seminar, I will discus how my group will use
microelectromechanical systems to 1) calibrate preexisting
force-displacement tools such as the AFM in bending and in torsion; and 2)
develop force-displacement tools that are several orders of magnitude more
precise and more sensitive than convention.
 
Bio
Prof. Clark received his Ph.D. in Applied Science from the University of
California at Berkeley, and his B.S. in physics from the California State
University at Hayward. His research concerns the design, modeling,
simulation, and verification of complex engineered systems. The overarching
goal is to develop system-level computer-aided engineering and metrology
tools to foster and accelerate advancement in tiny technologies for solving
societal-scale problems. Application areas include robotics, health, safety,
ecology, transportation, communication, etc.
 
 
3.2: Thursday, 02.22.07, 10:30 AM; BRK 1001: ³Heteroepitaxy on Nanoscale
Substrates: Applications to Solid State Lightning and Vacuum Field
Emission,² by Parijat Pramil Deb, Purdue University
 
Abstract 
Thin film heterostructures are limited by a maximum critical thickness
before introduction of extended defects. One- dimensional forms like
nanowires/nanorods, due to the possibility of lateral elastic relaxation,
can tolerate much larger lattice mismatch than their thin film counterparts.
In this talk, I shall describe some modeling work employing solution
thermodynamics and finite element analysis as a motivation to the
nanoheteroepitaxy approach to achieve a monolithic phosphor free white light
emitting diode (LED). A nanorod with a pointed tip morphology, will be shown
to be required for pushing the emission wavelengths from the InN-GaN system
to longer values (red). The talk will then proceed with the description of
the process developed to synthesize diameter controlled GaN pyramidal tipped
nanorods without the use of any catalysts. It will be shown that close
control over the diameter variation on the same substrate can be achieved by
a combination of the developed template based approach and optical
lithographic techniques. Due to the large surface area to volume ratio of
the synthesized nanorods, it is required to ascertain that the nanorods are
not devoid of charge carriers due to the surface depletion effect.
Electrical characterization results of the nanorods in the form of single
and multiple GaN nanorod Schottky and p-n junctions diodes employing
conductive atomic force microscopy will be presented. Finally,
cathodoluminescence spectra from InGaN nanorods will be used to show the
potential of the nanorod form to incorporate higher InN molefractions as
compared to thin film counterparts. Along with applications in solid-state
lighting, the pointed tip morphology of the nanorods, resulting in a very
high field enhancement factor, are contenders as field emitters. Coupled
with this, the incorporation of AlGaN on the nanorod tip helps to reduce the
effective surface work function resulting in a significant reduction in the
turn on field from AlGaN/GaN nanorod heterostructures. Such an approach
circumvents the doping problem of AlGaN, still utilizing its low electron
affinity property. Results from vacuum field emission experiments from
AlGaN/GaN nanorod heterostructures and their analysis will also be presented
in this talk.
 
Bio
Parijat Pramil Deb received his bachelors in "Metallurgical   Engineering"
from Pune Institue of Engineering and Technology   (formerly known as
Government College of Engineering, Pune), India.   Subsequently, I went for
the direct Ph.D proram in Dr. Tim Sands'   group starting Fall 2002. I have
been working on applications of nano- heteroepitaxy in solid state lighting.
I have received the Purdue   University Ross fellowship and also have been a
recepient of the  Applied Materials Inc. graduate fellowship for three
years. I plan to   graduate by April 2007 and will be joining Philips
Lumileds, San Jose   as a project leader in the technology transfer group
starting May 2007.    SPONSORED BY: Birck Nanotechnology Center, Bindley
Bioscience Center, Discovery   Park, The NASA Institute for Nanoelectronics
and Computing, The  Network for Computational Nanotechnology, VEECO, NCN
Student   Leadership Council, Department of Chemistry, Department of
Physics,  School of Chemical Engineering, School of Electrical and Computer
Engineering, School of Mechanical Engineering   3.3: Thursday, 02.22.07,
10:30 AM; EE 317: ³The Semiconductor Industry¹s Nanoelectronics Research
Initiative: Motivation and Challenges,² by Jeff Welser, Director, SRC
Nanoeclectronics Research Initiative, IBM Almaden Research Center  Abstract
For over 35 years, the ability to achieve increased performance per dollar
in microprocessor chips by scaling the dimensions of MOSFETs has been the
driving engine behind the global semiconductor industry. Exponentially
increasing power density due to leakage currents as well as active switching
energy to these nanoscale transistors is, however, limiting our ability to
reap benefits from continued scaling. We are now forced to trade-off
performance and density for reduced power consumption, and hhence the
fundamental physics of the CMOS transistor operation, rather than
fabrication capability, will eventually be the ultimate limit.  As the
ultimate limits to the scaling of CMOS technology are getting closer,
completely new approaches to emerging areas in electronics at the nanoscale
need to be explored. Recognizing this critical challenge, the
Nanoelectronics Research Initiative (NRI) was charted in 2005 by a
consortium of Semiconductor Industry Associate (SIA member compaies to
develop and administer a university-based program to address this issue.  In
this talk, the scaling challenges facing current CMOS technology will be
discussed, along with the ultimate limits for charge-switching based
devices. From this motivation, the current status of the NRI program will be
discussed, with an overview of the current research topics being
investigated at the NRI centers.  Jeff Welser, bio Dr. Welser received his
PhD in Electrical Engineering from Stanford University in 1995, and joined
IBM¹s Research Division at the TJ Watson Research Center. His graduate work
was focused on utilizing strained-Si and SiGe materials for FET devices.
Since joining IBM, Jeff has worked on and managed a variety of projects
involving novel devices. At IBM, Jeff has served as manager of the Novel
Silicon Dvice group at Watson, project manager for the high-performance CMOS
device design groups in the Microelectronics Division, director of
high-performance SOI and BEOL technology development, Director Next
Generation Technology Components. At the same time, he was the IBM
Management Committee Member for Sony, Toshiba, and AMD development
alliances. In 2006, Dr. Welser was named the Director of the Nanoelectronics
Research Initiative, on assignment to the Semiconductor Research Corporatio
(SRC), directing university-based research on future nanoscale logic devices
to replace the CMOS transistor in the 2020 timeframe. He is based at the IBM
Almaden Research Center in San Jose, CA.
 
************************
4. Workshops and Conferences
************************
 
NONE
 
 
************************
5. Fellowship/Job Opportunities
************************
 
NONE    


Deborah S. Starewich
Administrative Assistant to Timothy D. Sands, Director
Birck Nanotechnology Center
Purdue University

765-494-3509
dstarewi at ecn.purdue.edu

http://www.nano.purdue.edu/



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