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Publications

Journal Papers | Invited Conference Papers | Conference Proceedings Papers | Patents

 

Journal

2014

Book Chapter: “Simulation of Thermal and Electrical Transport in Nanotube and Nanowire Composites”, S. Kumar, M. A. Alam and J. Y. Murthy, Springer, 2014  (Book Title: “Numerical Modeling of Materials Under Extreme Conditions”).

 “Stability-Constraints Define the Minimum Sub-threshold Swing of a Negative Capacitance Field Effect Transistor", A. Jain and M. A. Alam, IEEE TED, 2014 (Accepted).

“Non-Faradaic Impedance Characterization of an Evaporating Droplet for Microfluidic and Biosensing Applications”, P. Dak, A. Ebrahimi and M. A. Alam, Lab on a Chip 2014 (Accepted).

“Nanostructured Electrodes Improve the Fill Factor of Organic Photovoltaics”, J. H. Beck, B. Ray, R. R. Grote, R. M. Osgood, C. T. Black, M. A. Alam and I. Kymissis, IEEE JPV, 2014. PDF

 “Correlation of built-in potential and IV crossover in thin film solar cells”, J. Moore, S. Dongaonkar, R. V. Chavali, M. A. Alam and M. Lundstorm, IEEE JPV, 2014 (Accepted).

 “Enhanced light trapping in solar cells with a meta-mirror following Generalized Snell’s Law”, M. R. Khan, X. Wang, P. Bermel, and M. A. Alam, Optical Express, 2014 (Accepted).

“Correlated Non-Ideal Effects of Dark and Light I-V Characteristics in a-Si/c-Si Heterojunction Solar Cells”, R. V. Chavali, J. Wilcox, B. Ray, J. L. Gray and M. A. Alam, IEEE JPV 2014 (Accepted).

“From Process to Modules: End-to-End Modeling of CSS-Deposited CdTe Solar Cells”, E. S. Mungan, Y. Wang, S. Dongaonkar, D. R. Ely, E. Garcia and M. A. Alam, IEEE JPV 2014 (Accepted).

 “Effective Nanometer Airgap of NEMS Devices using Negative Capacitance of Ferroelectric Materials”, M. Masuduzzaman, and M. Alam, 2014 (Submitted).

 “Observation and Control of Hot Atom Damage in Ferroelectric Devices”, M. Masuduzzaman, D. Varghese, J. Rodriguez, S. Krishnan, and M. Alam, 2014 (Submitted).

“Implications of Electrical Cross-Talk at High Density Aligned-Array of Single-Wall Carbon Nanotubes”, M. A. Wahab and M. A. Alam, 2014 (Submitted).

“Electrodeposition of InSb branched Nanowires: Controlled Growth with Structurally Tailored Properties’, Suprem R. Das, Cem Akatay, Asaduzzaman Mohammad, Mohammad Ryyan Khan, Kosuke Maeda, Russell S. Deacon, Koji Ishibashi, Yong P Chen, Timothy D. Sands, Muhammad A. Alam, and David B. Janes, ACS Nano, 2013. (Submitted).

“Multi-Probe Characterization of Inversion Charge for Parameterization of HIT™ Cells”, R. V. Chavali, S. Arora, B. Mohan, P. Nair, J. Gray and M. A. Alam, PVSC 2014 (Accepted).

 “Origin and Implication of Hot Carrier Degradation of Gate-all-around III-IV MOSFETs”, S. H. Shin, M.A. Wahab, M. Si, J.J Gu, P.D. Ye, M. Masuduzzaman, and M.A. Alam, Proc. of International Reliability Physics Symposium (IRPS), 2014. (Accepted)

“Electrical breakdown in polymers for BEOL applications: dielectric heating and humidity effects”, S. Palit and M. A. Alam, Proc. of International Reliability Physics Symposium (IRPS), 2014. (Accepted)

“Electrical breakdown in polymers for BEOL applications: dielectric heating and humidity effects”, S. Palit and M. A. Alam, Proc. of International Reliability Physics Symposium (IRPS), 2014. (Accepted)

“Critical Binding Energy of Exciton-Limited Transport of Organic Solar Cells”, R. Khan and M. A. Alam, DRC 2014 (Submitted).

“Electrostatic Cross-Talk to Define the Density Limit of Aligned-Array Phase-Change-Memory with Carbon Nanotube Electrodes”, M. A. Wahab and M. A. Alam, DRC 2014 (Submitted).

"Recent Advances in Nanobiosensors", Invited Talk, M. A. Alam, Device Research Conference, June, 2014.

"Emerging Issues of Reliability Physics", Invited Talk, M. A. Alam, M. Masuduzzaman, A. Jain, and S. Palit, IEEE Reliability Symposium, Idaho State, April 19,  2014.

“How to break the “Fundamental” Limits of Nanobiosensing”, M. A. Alam, NanobioNode Invited Lecture at UIUC, April 7, 2014. Video

"The elegant complexity of a simple capacitor", Invited Talk, M. A. Alam, M. Masuduzzaman, A. Jain, and S. Palit, , Texas Instruments, March 27, 2014.

"Is there any exiton (bottleneck) in an exciton solar cell: The cannonical experiments revisited", Invited Talk, American Physical Society, March 4, 2014

"Sequencing a Genome by a Torrent of Ions: How a Old-pH meter got its grove back", Invited Talk, M. A. Alam and J. Go., Dept. of Physics, Feb. 28, Purdue, 2014. Video

“Grain boundary initiated DC breakdown of Ferroelectric films and push-pull failures of series connected capacitors”, Invited Talk, D. Varghese, J. Rodriguez, S. Krishnan, M. A. Alam, Electronic Materials and Applications, January 22-24, Orlando, Florida.

2013

Book Chapter: “Physics of Nonlinear MEMS Biosensors”, A. Jain and M. A. Alam, Springer, 2013. PDF

“The Future Scalability of pH-Based Genome Sequencers: A Theoretical Perspective”, J. Go and M. A. Alam, Journal of Applied Physics, 2013. PDF

“Nanotextured Superhydrophobic Electrodes enable Detection of attomolar-scale DNA concentration within a Droplet by non-Faradaic Impedance Spectroscopy" A. Ebrahimi, P. Dak, E. Salm, S. Dash, S. Garimella, R. Bashir, and M. Alam, Lab on a Chip, DOI: 10.1039/C3LC50517K, 2013.  PDF

“A Compact Analytical Formulation For Current Transients In Electrochemical Systems,” P. R. Nair And M. A. Alam, The Analyst,  138(2):525-38. doi: 10.1039/c2an35346f, 2013.  PDF

“Ultra-localized Thermal Reactions in Sub-Nanoliter Droplets-in-Air,” E. Salm, C. D. Guevara, P. Dak, B. Dorvel, B. Reddy, M. A. Alam, and R. Bashir, Proc. of National Academy of Sciences, DOI:10.1073/pnas.1219639110,2013. PDF

 “Prospects of Hysteresis-Free Abrupt Switching (0mV/dec) in Landau Switches”, A. Jain and M. A. Alam, IEEE Transaction on Electron Devices, 60 (12), pp. 4269-4276, 2013. PDF

“Universal Resonant and Pull-in Characteristics of Tunable-Gap Electromechanical Actuators”, A. Jain and M. A. Alam, IEEE Transactions on Electron Devices, 60(12), pp. 4240-4247, 2013. PDF

“Fundamental Limits of Subthreshold Slopes in Negative Capacitor Switches” A. Jain and M. A. Alam, 2013. (Submitted).

“Extending and Tuning the Travel Range of Microelectromechanical Actuators using Reconfigurable Nanostructured Electrodes”, A. Jain and M. A. Alam, IEEE/ASME Journal of Microelectromechanical Systems, 2013. PDF

“Universal Scaling and Intrinsic Classification of Electromechanical Switches,  S. Palit, A. Jain, and M. A. Alam, Journal of Applied Physics, 2013. PDF.

Performance and Variability Studies of InGaAs Gate-all-around Nanowire MOSFETs”, N. Conrad, S. Shin, J. Gu, M. Si, H. Wu, M. Masuduzzaman, M. A. Alam, P. Ye, IEEE Transactions on Device and Materials Reliability, 2013. PDF

 “A Comparative Study of Different Physics Based NBTI Models,”, S. Mahapatra, N. Goel, S. Desai, S. Gupta, B. Jose, S. Mukhopadhyay, K. Joshi, A. Jain, A. E. Islam, and M. A. Alam, IEEE Trans. Electron. Devices, 60 (3),  pp. 901-916, 2013. PDF

 “Role of Atomic Variability in Dielectric Charging: A First Principles-based Multi-scale Modeling Study”, R. P. Vedula, S. Palit, M. A. Alam, and A. Strachan, Physical Review B,  vol. 88 (20), pp. 2052042013. PDF

 “Using Nanoscale Thermocapillary Flow to Create Arrays of Purely Semiconducting Single Walled Carbon Nanotubes”, S. Hun Jin, S. N. Dunham,  J. Song, X. Xie, J. Kim, C. Lu, A. Islam, J. Kim, F. Du, J. R. Felts, Y. Li, F. Xiong, M. A. Wahab, M. Menon, E. Cho1, K. L. Grosse, E. Pop, M. A. Alam, W. P. King, Y. Huang, J. A. Rogers,  Nature Nanotechnology, 2013.  PDF.

“Electrostatic Dimension of Aligned Array Carbon Nanotube Field Effect Transistors,” A. Wahab, S.-H. Jin, A.E. Islam, Jaeseong Kim, J. Kim, Woon-Hong Yeo, D. Lee, H. Chung, J. Rogers, M. A. Alam, ACS Nano, 2013. PDF

“Co-percolating Graphene-Wrapped Silver Nanowire Network for High Performance, Highly Stable, Transparent Conducting Electrodes”,  R. Chen, S. Das, C. Jeong, M. R. Khan, D. Janes, and M. A. Alam,  Advanced Functional Materials, 2013. PDF

“Prospects of Layer-Split Tandem Cells for High-Efficiency OPV”,  R. Khan, B. Ray, and M. A. Alam, Special Issue of Solar Energy Materials and Solar Cells, Sept. 2013.  PDF

“Fundamentals of PV Efficiency Interpreted by a Two-Level Model”, M. A. Alam and M. R. Khan, American Journal of Physics, 2013. PDF

“Modeling the Effects of Na Incorporation on CIGS Solar Cells”, S. Baytok, X. Wang, and M. A. Alam, Journal of PV, 2013. PDF  PRESENTATION

“Geometrical Design of Thin Film PV Module for Improved Shade Tolerance and Performance”, S. Dongaonkar and M. A. Alam,  Progress in Photovoltaics: Research and Applications, 2013. PDF arXiv:1303.4604 

“Performance and Reliability Implications of Two Dimensional Shading in Monolithic Thin Film Photovoltaic Modules”, S. Dongaonkar, C. Deline, and M. A. Alam,  IEEE Journal of Photovoltaics, 2013. PDF  arXiv:1303.4445

“In-Line Post-Process Scribing for Reducing Cell to Module Efficiency Gap in Monolithic Thin-Film Photovoltaics”, S. Dongaonkar and M. A. Alam,  IEEE Journal of Photovoltaics, 2013. PDF  

“The Essence and Efficiency Limits of Bulk-Heterostructure Organic Solar Cells: A Polymer-to-Panel Perspective,” J. Mat. Research. Invited Feature Article, 2013. PDF

“Modeling the Effects of Na Incorporation on CIGS Solar Cells,” S. Mungan, X. Wang, and M. A. Alam, IEEE Journal of Photovoltaics, 3(1), p. 451, 2013. PDF

“Design of GaAs Solar Cells Operating Close to the Shockley-Queisser Limit”, X. Wang, M. R. Khan, J. Gray, M. Alam, and M. Lundstrom, IEEE J. Photovoltaics, 99, 1-8, 2013. PDF

 “Universal Statistics of Parasitic Shunt Formation in Solar Cells and Its Implications for Cell-Module Efficiency Gap”, S. Dongaonkar, S. Loser, E. J. Sheets, K. Zaunbrecher, R. Agrawal, T. Mark, and M. A. Alam, Energy and Environmental Sciences, 10.1039/C3EE24167J, 2013. PDF

“Proposal of Exponentially Sensitive Stress Based Sensor Using Flexture-FET”, A. Jain and  M. A. Alam, Proc. of Nanomechanical Sensing Workshop, Stanford, 2013. PDF

 “Hot Atom Damage (HAD) Limited TDDB Lifetime of Ferroelectric Memories”, M. Masuduzzaman, M.A. Alam, Proc. of International Electron Device Meeting (IEDM), pp 21.4.1, 2013. PDF

 “Impact of nanowire variability on Performance and Reliability of Gate-all-around III-V MOSFETs”, S. H. Shin, M. Masuduzzaman, J.J Gu, M. A. Wahab, N. Conrad, M. Si, P.D. Ye, and M.A. Alam, Proc. of International Electron Device Meeting (IEDM), pp. 7.5.1, 2013. PDF

“Extended-gate biosensors achieve fluid stability with no loss in charge sensitivity”, P. Dak, P. Nair, J. Go and M. A. Alam, DRC 2013. PDF

“Role of Charged Defects on Organic Solar Cell Performance: Prospect of Heterojunction-Free Device Design”, B. Ray and M. Alam, Proc. of 37th IEEE Photovoltaic Specialists Conference (PVSC), June 16-21, 2013. PDF

 “Intrinsic Reliability of Solar Cells”, M. A. Alam and Mile Fife,  Tutorial Presentation, Proc. of 37th IEEE Photovoltaic Specialists Conference (PVSC), June 16-21, 2013. PDF     

“Reliability Physics of Solar Cells”, M. A. Alam, IRPS Tutorial, 2013. PDF

"Bridging the Gap: Modeling the Variation due to Grain Size Distribution in CdTe Solar Cells," E. S. Mungan, S. Dongaonkar and M. A. Alam,  Proc. of 37th IEEE Photovoltaic Specialists Conference (PVSC), June 16-21, 2013. PDF

”Estimation of Random Pyramid Texturing Density via Capacitance-Voltage Measurement in c-Si Solar Cells” , X. Wang and M. A. Alam, Proc. of 37th IEEE Photovoltaic Specialists Conference (PVSC), June 16-21, 2013. PDF

 “Reducing the Cell to Module Efficiency Gap in Thin Film PV using In-line Post-Process Scribing Isolation”, S. Dongaonkar and M. A. Alam, Proc. of 37th IEEE Photovoltaic Specialists Conference (PVSC), June 16-21, 2013. PDF

 “A Diagnostic Tool for Analyzing the Current-Voltage Characteristics in a-Si/c-Si Heterojunction Solar Cells”, R. V. K. Chavali, John R. Wilcox, B. Ray, J. L. Gray and M. A. Alam, Proc. of 37th IEEE Photovoltaic Specialists Conference (PVSC), June 16-21, 2013. PDF

 

2012

Book Chapter: “Flexible Electronics”, M. A. Alam and S. Kumar, Encyclopedia of Nanotechnology, Springer, 2012. PDF

Book Chapter: “Simulation of Electrical and Thermal Transport in Nanotube and Nanowire Composites”, S. Kumar, M. A. Alam, and J. Murthy, in an upcoming book on Advanced Structured Materials, DOI: 10.1007/8611_2011_61, Springer-Verlag Berlin Heidelberg, 2012. PDF

“The Flexure-FET Biosensor to Break the Fundamental Sensitivity Limits of Nanobiosensors using Nonlinear ElectroMechanical”, A. Jain, P. Nair, and M. A. Alam, Proc. of National Academy of Sciences, 2012. PDF

“Theory of Signal and Noise in Double Gated Nanoscale Electronic pH Sensing”, J. Go, P. Nair, and M. A. Alam, Journal of Applied Physics, 112(3), 034516, 2012. PDF

“Fabrication of High-k Hafnium Oxide Based Silicon Nanowires for Sensitive Detection of Small Nucleic Acid Oligomers”,  Brian Dorvel, B. Reddy, J. Go, M. A. Alam, and R. Bashir, ACS Nano, 6(7),  6150,  2012.  PDF

“Coupled Heterogeneous Nanowire-Nanoplate Planar Transistor Sensors for Giant (>10V/pH) Nernst Response",  J. Go, P. Nair, B. Reddy, B. Dorvel, R. Bashir,  and M. A. Alam, ACS Nano, 2012.  PDF

 “A Physics-based Predictive Modeling Framework for Dielectric Charging and Creep in REF MEMS Capacitive Switches and Varactors”, A. Jain, S. Palit, and M. A. Alam, J. of Microelectromechanical Systems, 21(2), 2012. PDF

 “The Origin of Broad Distribution of Breakdown Times in Polycrystalline Thin Film Dielectrics,” M. Masuduzzaman, S. Xie, J. Chung, D. Varghese, J. Rodriguez, S. Krishnan, and M. A. Alam, Applied Physics Letters, 101, 153511, 2012. PDF

 “Theory of charging and charge transport in 'intermediate' thickness dielectrics and its implications for characterization and reliability",  S. Palit and M. A. Alam, Journal of Applied Physics, 111, 054112, 2012.  PDF

“Probing Bulk Defect Energy Bands Using Generalized Charge Pumping Method”, M. Masuduzzaman, B. Wier, and M. A. Alam, Journal of Applied Physics, 111(7), 074501,  2012.  PDF

“On the Threshold of Hierarchal Percolating Systems,” J. Li, B. Ray, M. Alam, and M. Ostling, Physical Review E, 2012.  PDF

 “Geometry Optimization of Capacitorless Triple Gate FINFET 1T-DRAM using GIDL Current”, S. Chabukswar, G. Guisi, F. Crupi, G. Iannaccone, N Collaert, and M. A. Alam, Electron Device Letters (submitted), 2012. PDF

 “Sources Of Hysteresis In CNT-FET Transistors And Their Elimination Via Methylsiloxane Encapsulants And Optimized Growth Procedures” S-.H. Jin, A. E. Islam, T.-I. Kim, J.-H. Kim, M. Alam, And J. Rogers, Adv. Functional Mater. 2012.  PDF

 “Electroluminescence in Aligned Arrays of Single-Wall Carbon Nanotubes with Asymmetric Contacts”, X. Xie, A. E. Islam, M. A. Wahab, Y. Lina, X. Ho, M. A. Alam, and J. A. Rogers, ACS Nano, DOI: 10.1021/nn3025496, 2012. PDF

 “Wavelength-Dependent Absorption in Structurally Tailored Randomly Branched Vertical Arrays of InSb Nanowires,” A. Mohammad, S. Das, M. R. Khan, M. A. Alam and D. Janes, Nanoletters, 12(12), pp 6112-6118 2012. PDF

 “Self-assembly of Single Dielectric Nanoparticle Layers and Integration in Polymer-based Solar Cells,” J. E. Allen, B. Ray, M. Ryyan Khan, K. G. Yager, M. A. Alam and C.T. Black, Applied Physics Letters, 101, 063105, 2012. PDF

 “Random vs. Regularized OPV: Limits of Performance Gain of Organic Bulk Heterojunction Solar Cells by Morphology Engineering,” B. Ray and M. A. Alam,  Solar Energy Materials and Solar Cells, 2012. PDF

“Can Morphology Tailoring Improve the Open Circuit Voltage of Organic Solar Cell”, B. Ray, M. S. Lundstrom, and M. A. Alam,  Applied Physics Letters, 100, 013307, 2012. PDF

"Nano-structured Electrode for Organic Solar Cells: Analysis and Design Fundamentals", B. Ray, R. Khan, M. A. Alam, IEEE J. of Photovoltaics, 2012.  PDF

“Achieving Fill Factor Above 80% in Organic Solar Cells by Charged Interface,” B. Ray and M. A. Alam, IEEE J. of Photovoltaics, 2012. PDF

 “Stable Solution Operation Of VLS Grown N±P-N+ Silicon NW Field Effect Transistor,” W. Hu, X. Zhong, J. Go, S. Dean, S. Eichfeld, J. Redwing, C. Keating, M. A. Alam, And T. Mayers, 2012. PDF (Submitted).

 “Device Technology Breakthroughs of 2011: A Personal Take”, M. A. Alam, Year End Tutorial Review at IRPS, 2012.

 “A Generalized Theory of Electro-Mechanical Resonators with Fractal Electrodes”, A. Jain and M. A. Alam, Proc. ASME International Design Engineering Technical Conference (IDETC), 2012. PDF

 “Electro-mechanical Reliability of NEMFET”,  A. Jain and M. Alam, International Reliability Physics Symposium, 2012. PDF

"In Search of a Better MEMS Switch”, M. A. Alam and A. Jain, Qualcomm MEMS Technology Seminar Series, San Jose, CA, Feb. 3, 2012,

MEMS as a Landau Switch”,  M. A. Alam, UC Berkeley Solid State Seminar Series, Berkeley, CA,  Feb. 3, 2012.  PRESENTATION

“Intrinsic Correlation between PBTI and TDDB Degradations in nMOS HK/MG Dielectrics”, J. Yang, M. Masuduzzaman, K. Joshi, S. Mahapatra, M. Alam, IRPS 2012. (Accepted)

“A non-obtrusive technique to characterize dielectric charging in RF-MEMS capacitive switches”,  S. Palit and M. Alam, Proc. of IRPS, pp. 3F.3.1.-3F.3.6,  2012.  PDF

“A Comprehensive and Critical Re-assessment of 2-Stage Energy Level NBTI Model”, Shashank Gupta, Binoy Jose, Kaustubh Joshi, Ankit Jain#, Muhammad  Ashraful Alam#, and Souvik Mahapatra*, IRPS, 2012. PDF

“Genome Sequencing by a Torrent of Ions: How the old pH-meter got its groove back”, M. A. Alam and J. H. Go, Invited Talk at the Conference on Nanotechnology, Nanoactuation, and Nanobiosensors, UIUC, Aug. 7, 2012.

 “End-to-end Modeling for Variability and Reliability Analysis of Thin Film PV”,  S. Dongaonkar and M. Alam, International Reliability Physics Symposium, 2012. PDF

 “A Device Physics Perspective on Recent Efficiency Gains in GaAs Thin Film Solar Cells”, M. Lundstrom, X. Wang, and M. Alam, Workshop on Frontiers of Excellence in Photovoltaic Science and Technology, Jan. 15-17, 2012.

“Intrinsic Variability and Reliability of Thin Film Solar Cells”, Keynote Presentation, International Conference on the Developments in Renewable Energy Technology [ICDRET], Bangladesh, Jan 5-7, 2012.

 “Approaching the Shockley-Queisser Limit in GaAs Solar Cells”,  X. Wang, M. R. Khan, M. A. Alam, and M. Lundstrom, Photovoltaic Specialist Conference,  2012.

 “Band Alignment Limitations and Light-Soaking Effects in CZTSSe and CZTGeSS”, C. Hages, J. Moore, S. Dongaonkar, M.A. Alam, M. Lundstrom, and R. Agrawal, Photovoltaic Specialist Conference, 2012.

“Modeling the Effects of Na Incorporation on CIGS Solar Cells”, Elif S. Mungan, Xufeng Wang and Muhammad A. Alam, Photovoltaic Specialist Conference,  2012.

“Shade tolerant design of Thin Film Solar Cells”, Sourabh Dongaonkar and Muhammad A. Alam, Photovoltaic Specialist Conference, 2012. PDF

“Achieving Fill factor exceeding 80% by Interface Engineering”, Biswajit Ray and Muhammad Alam, Photovoltaic Specialist Conference 2012.

“Reverse stress metastability of shunt current in CIGS solar cells”, S. Dongaonkar, E. Sheets, R. Agrawal and M. A Alam, Photovoltaic Specialist Conference, 2012. PDF

 

2011

 “Modeling and Simulation in Photovoltaics Research, Development, and Manufacturing”, M. S. Lundstrom, M. A. Alam, and R. H. Havemann, Future of Photovoltaics, Dec. 2011. (Accepted).

“Prospects of Nanowire-Doped Polycrystalline Graphene Films for an Untratransparent, High Conductive Electrode”, C. Jeong, P. Nair, M. Khan, M. Lundstrom, and M. Alam, Nanoletters, DOI: 10.1021/nl203041n, 2011. PDF

“The Origin and Consequences of Push-Pull Breakdown in Series Connected Dielectrics”, M. Masuduzzaman, D. Varghese, H. Guo, S. Kirshnan, and M. A. Alam, Applied Physics Letters, 99, 263506, 2011. PDF

 “Self-Consistent Electro-Thermal Analysis of Nanotube Network Transistors”, S. Kumar, N. Pimparkar, J. M. Murthy, and M. A. Alam, Journal of Applied Physics, 109, 014315, 2011. PDF

“Diameter-dependent analytical model for light spot movement in carbon nanotube array transistors,” T.M. Abdolkader and M. A. Alam, Applied Physics Letters, 98, 1, 2011. PDF

“Strategies for Dynamic Soft-Landing in Capacitive Microelectromechanical Switches”, A. Jain, P. Nair, and M. Alam, 98, 234104, 2011. PDF

“An Elementary Model for Performance and Reliability of RF-MEMS Capacitive Switches and Varactors”, A. Jain, S. Palit, and M. Alam, Journal of MEMS, 2011.  PDF

“Physics and Statistics of  Non-ohmic Shunt Conduction and Metastability in Amorphous Silicon p-i-n Solar Cells”, S. Dongaonkar, Karthik Y., S. Mahapatra, and M. Alam, IEEE J. of Photovoltaics,  1(2), 111-117, 2011. PDF

“Markov-Chain Formulation of Reaction-Diffusion Model and Its Implications for Statistical Distribution of Interface Defects in Nanoscale Transistors”, A. E. Islam and M. A. Alam, J. of Computational Electronics,  2011.  PDF

“A Compact Physics Model for Morphology Induced Intrinsic Degradation in Polymer based Bulk Heterojection Solar Cells”, B. Ray and M. A. Alam, Applied Physics Letters, 99, 033303, 2011. PDF (Also selected for the July 2011 issue of APL: Organics Electronics and Photonics)

Annealing Dependent Performance of Organic Bulk-Heterojunction Solar Cells:  A Theoretical Perspective”, B. Ray, P. Nair, and M. Alam, Solar Energy Materials and Solar Cells, doi:10.1016/j.solmat.2011.07.0062011. PDF

“Silicon Field Effect Transistors as Dual-Use Sensor-Heater Hybrids”, B. Reddy, O. Elibol, P. Nair,  B. Dorvel, F, Butler, Z. Ahsan, D. Bergstrom, M. Alam, and R. Bashir,  Analytical Chemistry, dx.doi.org/10.1021/ac102566f, 2011. PDF.

“High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing”, B. Reddy, B. Dorvel, J. Go, P. Nair, O. Elibol, C. Credo, J. Daniels, E. Chow, X. Su, M. Varma, M. Alam, and R. Bashir,  Biomedical Microdevices, DOI 10.1007/s10544-010-9497-z, 2011. PDF.

 “Essential Aspects of Negative Bias Temperature Instability” (Invited Paper), A. E.  Islam, S. Mahapatra, S. Deora, and V.D. Maheta, and M. A. Alam, 219the ECS Meeting, vol. 35(4), 2011. In Silicon Nitride, Silicon Dioxide, and Emergining Dielectrics, Editor: R. Sah. PDF. Audio

“The Physics of Nanonet Fabrics and Its Application in Electronic, Optoelectronics, Biosensing, Energy Storage, and MEMS Applications”, (Invited Tutorial Paper) M. A. Alam, S. Kumar, N. Pimparkar, P. Nair, J. Go. And A. Jain, 219the ECS Meeting, vol. 35(3), pp. 55-65, 2011. PDF.

 “Many Faces of Modern MOSFET – The Physics of More Than Moore Technologies,” Invited Tutorial at the ESSDERC Conference, Helsinki, 2011.

"Intrinsic Correlation between PBTI and TDDB Degradation in nMOS HK/MG Dielectrics", J. Yang, M. Masuduzzaman, K. Joshi, S. Mukhopadhyay, J.F. Kang, S. Mahapatra, and M. A. Alam, 2011. (Accepted).

“Numerical Studies on Randomly Distributed Gold Nanonet Structures”, J. Fang, L. Prokopeva, M. A. Alam, V. Shalaev, and A. Kildishev”, Applied Computational Electromagnetic Society Conference, 2012. (Submitted).

"Failure Increase Under Combined NBTI and PBTI Effects in High-k CMOS Circuits", J. Velamala, J. Yang, K. Sutaria, V. Ravi, M. A. Alam, and Y. Cao, 2011. (submitted).

"Optimum  Morphology and Performance Gains of Organic Solar Cells", B. Ray and M. Alam, in Organic Photovoltaics: Interfaces and Morphology,  37th Photovoltaic Specialists Conference, 2011. PDF Audio

“Reflection and Transmission Properties of Thin Branched InSb NW Arrays Formed by Electrodeposition " Asaduzzaman Mohammad, Suprem  Das, Mohammad Khan, Muhammad Alam, David Janes, Electronic Materials Conference, 2011.

"A Physical Model for Non-ohmic Shunt Conduction and Metastability in Amorphous Silicon p-i-n Solar Cells",  S. Dongaonkar, S. Mahapatra, Karthik Y, and M. A. Alam, in Amorphous, Nano, and Film Si: Novel concepts and Fundamental Physics of thin silicon films and devices, 37th Photovoltaic Specialists Conferences, 2011. Audio

 “A Critical Reevaluation of the Usefulness of RD Framework in Predicting NBTI Stress and Recovery”, S. Mahapatra, A.E. Islam, S. Deora, V. Maheta, K. Joshi, A. Jain, and M. A. Alam, Proc.  International Reliability Physics Symposium, pp. 614-623, 2011. PDF Audio

“SILC-Based Reassignment of Trapping and Trap Generation Regimes of Positive Bias Temperature Instability”, J.Q. Yang, M. Masuduzzaman, J. F. Kang, and M. A. Alam, Proc.  International Reliability Physics Symposium, 2011. PDF

“Experimental Identification of Unique Oxide Defect Regions by Characteristic Response of Charge Pumping,” M. Masuduzzaman1, Ahmad Islam1, Robin Degraeve2, Moonju Cho2, Mohammed Zahid2, M.A. Alam1 Proc.  International Reliability Physics Symposium, pp. 207-212, 2011. PDF

“Reliability-Aware Design of Integrated Circuits”, M. A. Alam, Proc.  International Reliability Physics Symposium, pp. 353-363, 2011. PDF

“The Physics of Shadow Degradation in Thin Film Solar Cell,” S. Dongaonkar, Karthik Y., S. Mahapatra, and M. Alam, Proc. International Reliability Physics Symposium, pp. 557-561, 2011. PDF

 “Identification, Characterization and Implications of Shadow Degradation in Thin Film Solar Cells,”, S. Dongaonkar, Y. Karthik, D. Wang, M. Frei, S. Mahapatra, and M. A. Alam,  IRPS Proc.  2011, pp. 5E.4.1 – 5E.4.5. PDF

 

2010

 “Theory of Selectivity of Label-Free Nanobiosensors: A Geometro-Physical Perspective”, P.R. Nair and M.A. Alam, Journal of Applied Physics, vol. 107, pp. 064701, 2010. PDF

“Scaling Properties in Transistors that Use Aligned Arrays of Single Wall Carbon Nanotubes”, X. Ho, L. Ye, S. Rotkin, Q. Cao, S. Unarunotai, S. Salamat, M. A. Alam, J. Rogers, Nano Letters, 10(2), pp. 499-503, 2010. PDF

“Kinetic Response of Surfaces defined by Finite Fractals”, P. Nair and M.A. Alam, Fractals, 2010. PDF

“On-State Hot Carrier Degradation in Drain Extended NMOS Transistors”, D. Varghese, P. Moens, M. A. Alam, IEEE Trans. on Electron Devices, 57(10), pp. 2704-2710, 2010. PDF

 “Bipolar Mode Operation and Scalability of Double Gate Capacitorless 1T DRAM Cells”, G. Guisi, M. A. Alam, F. Crupi, and S. Pierro, IEEE Trans. Electron Devices, vol. 57(8), 1743-1750, 2010.  PDF

 “On the Nature of Anomalous Shunt Leakage in Amorphous Silicon p-i-n Solar Cells”, S. Dongaonkar, D. Wang, M. Frei, S. Mahapatra, and M. Alam, IEEE Electron Device Letters, 2010. PDF

“Detection Limits of Magnetic Biobarcode Sensors and the Phase Space of Nanobiosensing”, P.R. Nair and M.A. Alam, Analyst, 2010. PDF

“Universality of non-ohmic Shunt Leakage in Thin Film Solar Cells”, S. Dongaonkar, J. Servaites, G. Ford, S. Loser, J. Moore, R. Gelfand, H. Mohensi, H. Hillhouse, R. Agrawal, M. Ratner, T. Marks, M. Lundstrom, and M. Alam. Journal of Applied Physics, 108, 124509, 2010. PDF

Extraction of Interface Trap States of MOS Devices on Alternative High-Mobility Substrates from the Low Frequency Gate C-V Characteristics”,  Md. M. Satter, D. Varghese, A. E. Islam, M. A. Alam, and Anisul Haque, Solid State Electronics, 2010. (Accepted).

“Beating the Nernst Limit of 59 mV/dec by Double Gated Nano-Scale Field-Effect Transistors and Its Applications to Ultra-Sensitive DNA Biosensors”, J.-H. Go, P. Nair, B. Reddy, R. Bashir, M. Alam, International Electron Device Meeting, 2010.

“Morphology Dependent Short Circuit Current In Bulk Heterojunction Solar Cell”,  Biswajit Ray, Pradeep R. Nair, And M. A. Alam, IEEE Photovoltaic Specialists Conference, pp. 85-89, June, 2010. PDF

"A Multi-Probe Correlated Bulk Defect Characterization Scheme For Ultra-Thin High-Κ Dielectric",  M. Masuduzzaman, A. E. Islam, And M. A. Alam, Proc. Of International Reliability Physics Symposium, 2010. PDF

“Performance Improvement of Polymer Based Solar Cell by Ordered Nano-morphology”, Biswajit Ray, Mohammad Ryyan Khan, and Muhammad A.  Alam, University Government Industry Micro/nano Symposium, June, 2010.

 

"Effect of fluid gate on the electrostatics of ISFET-based pH sensors", J. Go and M.A. Alam, University Government Industry Micro/nano (UGIM) Symposium, 2010.

 

"Towards a universal model for hot carrier degradation in DMOS transistors”, Proc. Of International Symposium on Power Semiconductor Devices and IC’s (ISPSD), Paper 3-2, 2010.

 

A Theoretical Study of Negative Bias Temperature Instability in p-type NEMFET", * Ankit Jain*, A. E. Islam, and M. A. Alam, /University/Government/Industry Micro-Nano Symposium (UGIM), 2010. PDF

 

 

2009

“Isolation of NBTI Stress Generated Interface Trap and Hole Trapping Components in PNO p-MOSFETs”, S. Mahapatra, V.D. Maheta, A. E. Islam, M.A. Alam, Trans. On Electron Devices, vol. 56(2), pp. 236-242, 2009.

“Localized Heating on Silicon Field Effect Transistors: Device Fabrication and Temperature Measurements in Fluid”, O.H. Elibol, B. Reddy Jr., P.R. Nair, B. Dorvel, F. Butler, Z. Ahsan, D. E. Bergstrom, M.A. Alam, R. Bashir, Lab On a Chip, 9, pp. 2789-2795, 2009. PDF

“Device Considerations for Development of Conductance based Sensors”, K. Lee, P.R. Nair, A. Scott, M. A. Alam, and D. Janes, Journal of Applied Physics, 105, pp. 102046, 2009. PDF

“Statistical Interpretation of Femto-Molar Detection”, J. Go and M.A. Alam, Applied Physics Letters, 95(3), p. 033110, 2009. 

 “A Common Framework of NBTI Generation and Recovery in Plasma Nitrided SiON p-MOSFETs”, S. Doera, V.D. Maheta, A.E. Islam, M.A. Alam, and S. Mahapatra, IEEE Electron Device Letters, 30(9), pp. 978-980, 2009. PDF

"Material Dependence of Negative Bias Temperature Instability (NBTI) Stress and Recovery in SiON p-MOSFETs," S. Mahapatra, V. D. Maheta, S. Deora, E. N. Kumar, S. Purawat, C. Olsen, K. Ahmed, A. E. Islam and M. A. Alam, (Invited), Journal of Electrochemical Society, pp. 243-263, 2009. PDF

“Theory and Practice of ‘Striping’ for Improved On/Off Ratioin Carbon Nanotube Thin Film Transistors”, N. Pimparkar, Q. Cao, J. Rogers, M.A. Alam, Nano Research, vol. 2(2), pp. 167-175, 2009.

“Charge-Pumping as a Monitor of OFF-state TDDB in Asymmetrically Stressed Transistors”, D. Varghese and M. Alam, IEEE Electron Device Letters, 39(9), pp. 972-974, 2009. PDF

"Physics and Mechanisms of Dielectric Trap Profiling by Multi-Frequency Charge Pumping (MFCP) Method",  M. Masuduzzaman, A. E. Islam, and M. A. Alam, Proc. of International Reliability Physics Symposium, 2009, pp. 13-20. PDF

 

“Efficient Multi-scale Self-consistent simulation of planar Schottky-Barrier Carbon Nanotube Field-Effect Transistors and arrays”, Tarek M. Abdolkader, Muhammad A. Alam, University Government Micro/Nano Symposium, 2010

 

“Modeling and Optimization of Polymer based Bulk Heterojunction (BH) Solar cell”, B. Ray, P.R. Nair, R. E. García, M. Alam, International Electron Devices Meeting (IEDM), Baltimore, USA, Dec 2009. PDF

 

"A novel model for (percolating) nanonet chemical sensors for microarray-based E-nose applications", J. Go, V.V. Sysoev, A. Kolmakov, N. Pimparkar and M.A. Alam, IEDM, 2009.

 

"On the Reliability of and Self-Compensation in Strained Transistors," M. A. Alam and A. E. Islam, International Conference on Solid State Devices and Materials (SSDM) 2009, session B-9-1. PDF

 

"On The Differences Between Ultra-fast NBTI Experiments and Reaction-Diffusion Theory," A. E. Islam, S. Mahapatra, S. Deora, V. D. Maheta, and M. A. Alam, International Electron Devices Meeting (IEDM)  2009, pp. 733 PDF

 

"Self-Optimizing Defect Generation for Advanced CMOS Substrates," A. E. Islam and M. A. Alam, International Integrated Reliability Workshop (IIRW) 2009, pp. 97-101. PDF

 

2008

“Medium Scale Carbon Nanotube Thin Film Integrated Circuits on Flexible Plastic Substrates”, Q. Cao, H.-S. Kim, N. Pimparkar, J.P. Kulkarni, C. Wang, M. Shim, K. Roy, M.A. Alam, J. Rogers, vol. 454(24), pp. 495-500, 2008.

 “On the Possibility of Degradation-Free Field Effect Transistors,” A. E. Islam, and M. A. Alam, Applied Physics Letter, 92, 173504, 2008. PDF

“ “Optimization of Gate Leakage and NBTI for Plasma-Nitrided Gate Oxides by Numerical and Analytical Models,” A. E. Islam, G. Gupta, K. Ahmed, S. Mahapatra and M. A. Alam, IEEE Transaction on Electron Devices, 55(5), pp. 1143-1152, May 2008. PDF

“Screening-limited Response of Nanobiosensors”, P. Nair and M. Alam, Nanoletters, vol. 8(5), pp. 1281-1285, 2008. PDF

“Electrical Detection of Biological Interaction between TAT Peptide and TAR RNA via GaAs Junction Field Effect Transistors,” Kangho Lee, Pradeep R Nair, Muhammad A. Alam, and David B. Janes,  Journal of Applied Physics, 103(11), pp. 114510-114510-7, 2008.

“Defect generation in p-MOSFETs Under Negative Bias Stress: An Experimental Perspective,” (Invited) S. Mahapatra and M. A. Alam, IEEE Transaction on Material and Reliability, March 2008. PDF

“A Bottom-up Redefinition for Mobility and  the Effect of Poor Tube-Tube Contact on the Performance of CNT Nanoelectronics,” N. Pimparkar and M. Alam, IEEE Electron Device Letters, Accepted, 2008.

 “Exploring the Capability of Multi-Frequency Charge Pumping in Resolving Location and Energy Levels of Traps Within Dielectric”, Muhammad Masudduzzaman, A. E. Islam, and M. A. Alam, Transaction on Electron Devices, vol. 55(12), pp. 3421-3431, 2008. PDF

“Theory of Breakdown Position Determination by Voltage- and Current Ratio Methods”.  M. A. Alam, D. Varghese and B. Kaczer, Transaction on Electron Devices, vol. 55(11), pp. 3150-3158, 2008. PDF

 “Reliability- and Process Variation Aware Design of Integrated Circuits, (Invited) M. A. Alam, Microelectronics Reliability, 48, pp. 1114-1122,  2008.

“Percolation Effects on the Thermal Conductivity of 3D Nanotube Composites”, S. Kumar, M. Alam, J. Murthy, Proc. of ASME International Mechanical Engineering Congress and Exposition, 2008.

 

2007

“Limits of Performance Gain of Aligned CNT over Randomized Network: Theoretical Predictions and Experimental Validation,” N. Pimparkar, C. Kocabas, S. J. Kang, J. Rogers and M. A. Alam, Electron Device Letters, July 2007. PDF

“Dimensionally Frustrated Diffusion Towards a Fractal Aborber,” P. Nair and M. Alam, Physical Review Letters,  Dec. 2007. PDF

“Design Considerations of Nanowire Biosensors”, P. Nair and M. Alam, IEEE Transaction on Electron Devices, Dec. 2007. PDF

“Simulation of Carbon Nanotube FETs including Hot-Phonon and Self-Heating Effects,” Sayed Hasan, M. A. Alam and M. S. Lundstrom, IEEE Transaction on Electron Devices, Special Issue on Modeling and Simulation, 54(9), pp. 2352-2361, 2207. . PDF  

“Scaling Limits of Double-Gate and Surround Gate Z-RAM Cells,” N. Butt and M. A. Alam, , IEEE Transaction on Electron Devices, Special Issue on Modeling and Simulation, 54(9), pp. 2255-2262, 2007. PDF

“Soft Error Trends and New Physical Model for Ionizing Dose Effects in Double Gate Z-RAM Cell,” N. Butt and M. A. Alam, IEEE Trans. on Nuclear Science, 2007. PDF

“Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation,” (Invited paper) A. E. Islam, H. Kufluoglu, D. Varghese, S. Mahapatra, and M. A. Alam, IEEE Transaction on Electron Devices, Special Issue on Modeling and Simulation, 54(9), pp. 2143-2154, 2007. PDF

“Off state Degradation in Drain Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown,” D. Varghese, H. Kufluoglu, V. Reddy, H. Shichijo, S. Krishnan and M. A. Alam, IEEE Trans. Electron Devices, 54(10), pp. 2669-2678,  2007. PDF

“Experimental and Theoretical Studies of Transport through Large Scale, Partially Aligned Arrays of Single Walled Carbon Nanotubes in Thin Film Type Transistors”,  C. Kocabas, N. Pimparkar, O. Yesilyurt , M. A. Alam and J.A. Rogers, Nanoletters, Web Release Date: 30-Mar-2007; DOI: 10.1021/nl062907m, 2007. PDF

“High Performance Electronics Based on Dense, Perfectly Aligned Arrays of Single Walled Carbon Nanotubes”,  Seong Jun Kang, Coskun Kocabas, Taner Ozel, Moonsub Shim, Ninad Pimparkar, Muhammad A. Alam, Slava Rotkin John A. Rogers, Nature Nanotechnology, Published online: 25 March 2007 | doi:10.1038/nnano.2007.77. PDF   

“Current-Voltage Characteristics of Long-Channel Nanobundle Thin-Film Transistors: A Bottom-Up Perspective”, N. Pimparkar, Q. Cao, S. Kumar, J. Murthy, J. Rogers, and M. Alam, Electron Devices Letters, 28(2), pp. 157-160, Jan. 2007. PDF

“A Generalized Reaction-Diffusion Model With Explicit H-H2 Dynamics for Negative Bias Temperature Instability Degradation” H. Kufluoglu and M. Alam, IEEE Trans. Electron Devices, vol.54(5), pp.1101-1107, 2007. PDF

“Impact of Negative Bias Temperature Instability in Nano-Scale SRAM Array: Modeling and Analysis,” K. Kang, K. Roy, H. Kufluoglu and M. A. Alam, IEEE Transactions on Computer-Aided Design of Integrated Circuits and System, vol. 26, no. 10, October 2007, pp. 1770-1781. [PDF]

“N-type Field-effect Transistors using Multiple Mg-doped ZnO Nanorods”,  Sanghyun Ju, Jianye Li, Ninad Pimparkar , Muhammad A. Alam, R.P.H. Chang and David B. Janes, IEEE Transaction on Nanotechnology,  2007.  PDF

“Effect of Percolation on Thermal Transport in Nanotube Composites,” S. Kumar, M. Alam, and J. Murthy, Applied Physics Letters, 90, 104105, 2007. PDF

 “Critical Analysis of short-term negative bias temperature instability measurements: Explaining the effect of time-zero delay for On-the-Fly Measurements”, A. E. Islam, H. Kufluoglu, D. Varghese, M. Alam, Applied Physics Letter, 90,  083505, 2007. PDF

 “Sub-Bandgap Impact Ionization and Excitation in Carbon Nanotube Transistors" , J. Guo, M. Alam, and Y. Ouyang, Journal of Applied Physics, 2007.  PDF

“Performance Assessment of Sub-Percolating  Nanobundle Network Thin Film Transistors by an Analytical Model” by N. Pimparkar, J. Guo, and M.A. Alam, Transaction on Electron Devices,  54(4), 2007. PDF

“Negative Bias Temperature Instability: Estimation and Design for Improved Reliability of Nanoscale Circuits,” B. C. Paul, K. Kang, H. Kufluoglu, M. A. Alam, K. Roy,  IEEE Transactions on Computer-Aided Design of Integrated Circuits and System, 26(4), 743-751,  April 2007. PDF

“Computational Model for Transport in Nanotube-Based Composites with Applications to Flexible Electronics”, S. Kumar, J. Murthy, and M. Alam, Journal of Heat Transfer, 129, pp. 500-508, 2007. PDF

“Electrical and Thermal Transport in Thin-Film Nanotube Composites with Applications to Macroelectronics”, S. Kumar, M. Alam, and J. Murthy, Journal of Nanomanufacturing, 2007 (Accepted).

 

 

 2006

 

“Theory of Nanocomposite Network Transistors”, (Invited paper) M. Alam, N. Pimparkar, S. Kumar, J. Murthy, MRS Bulletin, 31(6), 923, 2006. PDF

 

“Performance limits of Nano-Biosensors”, P. R. Nair and M. A. Alam, Applied Physics Letters, 88,  233120, 2006 PDF (Also profiled in Virtual Journal of Nanoscale Science and Technology and Virtual Journal of Biological Physics Research: Both publishers of Selected Papers from all other print journal).

 

“Anomalous Resonance in a Nanomechanical Biosensor”,  A. Gupta, P. Nair, D. Akin, M. Ladishch, S. Broyles, M. Alam, and R. Bashir, Proc. of National Academy of Sciences, 103(36), 13362, 2006 .  PDF

 

"Theoretical Investigation on Photoconductivity of Single Intrinsic Carbon Nanotubes", Y.-K. Yoon, M. Alam, J. Guo, Applied Physics Letters, 88, 133111, 2006. PDF

 

"Performance of  Carbon Nanotube-Dispersed Thin-Film Transistors," S. Kumar, G. B. Blanchet, M. S. Hybertsen, J. Y. Murthy, and M. A. Alam, Applied Physics Letters, 89, 143501, 2006. PDF

 

"Theory of Transfer Characteristics of Nanotube Network Transistors," S. Kumar, N. Pimparkar, J. Y. Murthy, and M. A. Alam, Applied Physics Letters, 88, 123505, 2006. PDF

 

“A Comprehensive Model for PMOS NBTI Degradation: Recent Progress”, (Invited paper) M. Alam, H. Kufluoglu, D. Varghese, S. Mahapatra, Microelectronics Reliability, 47(6), 2007. pp. 853-862, Dec. 2006. PDF

 

“A Theory of Interface Trap Induced NBTI Degradation for Reduced Cross-section MOSFETs,” H. Kufluoglu and M. A. Alam,  IEEE Transaction on Electron Devices, 53(5), 1120-1130, 2006. PDF

 

 

 2005

 

”Percolating Conduction in Finite Nanotube Networks”, S. Kumar, J. Murthy, and M. Alam, Physical Review Letters, 95(6), 066802, 2005. PDF

 

 “High-Frequency Performance Projections for Ballistic Carbon Nanotube Transistors”, S. Hasan, S. Salahuddin, M. Vaidyanathan, and M. A. Alam, IEEE Trans. on Nanotechnology, 6, p. 2007, 2005. PDF

 

“Macroelectronics: Perspective on Technology and Applications” (Invited paper) R. H. Reuss, B. R. Chalamala, A. Moussessian, M. G. Kane, A. Kumar, D. C. Zhang, J. A. Rogers, M. Hatalis, D. Temple, G. Moddel, B. J. Eliasson, M. J. Estes, J. Kunz, E. Handy, E. S. Harmon, D. B. Salzman, J. M. Woodall, M. Ashraf Alam, J. Murthi, S. C. Jacobson, M. Olivier, D. Markus, P. M. Cambell, and Eric Snow, Proceedings of IEEE, Special Issue on Flexible Electronics, 93(7), pp. 1239-1256, 2005. PDF

 

“Carrier Transport and Light-Spot Movement in Carbon-Nanotube Infrared Emitters”, J. Guo and M. Alam,  Applied Physics Letters, 86, 023105,  2005. PDF

 

 “Negative bias temperature instability in CMOS devices”, (Invited paper) S. Mahapatra, M. A. Alam, P. Bharath Kumar, T. R. Dalei, D. Varghese and D. Saha, Microelectronics Engineering, Special issue on INFOS, 80, 114-121, 2005. PDF

 

 “Hole Energy Dependent Interface Trap Generation in MOSFET Si/SiO2 Interface”, D. Varghese, S. Mahapatra and M. A. Alam, IEEE Electron Device Letters, 26(8), 572-574, 2005. PDF

 

''Impact of NBTI on the Temporal Performance Degradation of Digital Circuits,'' B. C. Paul, K. Kang, H. Kufluoglu, M. A. Alam and K. Roy, IEEE Electron Device Letters, 26(8), pp. 560-562, 2005. PDF

 

“Gate Dielectric Breakdown in the Time-Scale of ESD Breakdown,” (Introductory Invited Paper),  B. Weir, C. Leung, P. Silverman, and M. Alam, Microelectronics Reliability, 45, pp. 427-436, 2005. PDF

 

“Comment on “Analysis of Hydroxyl Group Controlled Atomic Layer Deposition of Hafnium Oxide From Hafnium Tetracloride and Water”, M. Alam and M. Green,  Journal of Applied Physics, 98, 016101, 2005. PDF

 

 “A Computational Model of NBTI and Hot Carrier Injection Time-Exponents for MOSFET Reliability,  H. Kufluoglu and M. A. Alam, Journal of Computational Electronics, 3(3), pp.165-169, 2005. PDF
 
 

 2004

 

“DNA Mediated Fluctuations in Ionic Current through Silicon Oxide Nano-Channels”, R. Bashir, H. Chang, F. Kosari, G. Andreakakis, M. A. Alam, G. Vasmatzis,  Nano Letters,  4(8), pp. 1551-1556, 2004.

 

 “A Comprehensive Model of PMOS Negative Bias Temperature Degradation,” (Invited paper) M. A. Alam and S. Mahapatra,  Special issue of Microelectronics Reliability, volume 45, number 1, pp. 71-81, 2004. PDF

 

 "Investigation and Modeling of Bulk and Interface Trap Generation During Negative Bias Temperature Instability in PMOSFETS,"  M. A. Alam and S. Mahapatra, IEEE Trans. on Electron Devices , 51(9), pp. 1371-1379, 2004. PDF

 

 

 1995-2003

 

“A Mathematical Description of  Atomic Layer Deposition, and its Application to the Nucleation and Growth of High-k Gate Dielectrics,”  M. A. Alam and M. L. Green,  Journal of Applied Physics,  vol. 94(5),  pp. 3403-3413, 2003.

 

 “Uncorrelated Breakdown of Silicon Integrated Circuits,”   M. A. Alam, R. K. Smith, B. E. Weir, and P. J. Silverman, Nature,  6914,  p. 378,  2002.

 

“A Future of Function or Failure?”  M. A. Alam, Bonnie E. Weir, and P. Silverman,  IEEE Circuits and Devices - The Electronics and Photonics Magazine ( Invited paper ), 18(2),  pp. 42-48, 2002.

 

“SILC as a Measure of Trap Generation and Predictor of TBD in Ultrathin Oxides”,  M. A. Alam, IEEE Transaction on Electron Devices, 49 (2),  pp. 226-231, 2002.

 

“A Study of Soft and Hard Breakdown (part I): The Statistical Model,”  M. A. Alam, B. E. Weir, and P. J. Silverman,  IEEE Transaction on Electron Devices, 49 (2),  pp. 232-238, 2002.

 

“A Study of Soft and Hard Breakdown (part II): Principles of Area, Thickness, and Voltage Scaling,” M. A. Alam, B. E. Weir, and P. J. Silverman, IEEE Transaction on Electron Devices, 49 (2), pp. 239-246, 2002.

 

“Photo-emission Study of Zr- and Hf- Silicates for use as High-k Oxides: role of second neighbors and interface charge,  R. L. Opila, G. D. Wilk, M. A. Alam,  Applied Physics Letters, 81 (10),  pp. 1788-90,  2002.

 

“Role of Carrier Capture in Microscopic Simulation of Multi-Quantum-Well Semiconductor Laser Diodes,” M. S. Hybertsen, B. Witzigmann, M. A. Alam, and R. K. Smith, Journal of Computational Electronics, 1: pp. 113-118, 2002.

 

 “A Computational Model for Oxide Breakdown - Theory and Experiment,” M. A. Alam, B. E. Weir, J. D. Bude, P. Silverman, and A. Ghetti,  (Invited paper),  Microelectronics Engineering, pp. 137-147, 2001.

 

“Soft Breakdown at All Positions Along the NMOSFET Channel,  B. E. Weir, M. A. Alam, P. J.   Silverman, Microelectronics Engineering, 59 (1-4), pp. 17-23, 2001.

 

“Gate Oxide Reliability Projection to the Sub-2nm Regime,”  B. E. Weir, M. A. Alam, J. D. Bude, P. J. Silverman, A. Ghetti, F. Baumann, P. Diodato, D. Monroe, T. Sorsch, G. Timp, Y. Ma, M. M. Brown, A. Hamad, D. Hwang, P. Mason,  Semiconductor Science and Technology, 15, pp. 455-461, 2000.

 

“Ultra-thin Gate Oxide Reliability Projections,”  B. E. Weir, M. A. Alam, P.J. Silverman, F. Baumann, D. Monroe, J. D. Bude, G. L. Timp, A. Hamad, Y. Ma, M. M. Brown, D. Hwang, T.W. Sorsch, A. Ghetti,  and  G. D. Wilk, Solid State Electronics,  46 (3), pp. 321-328, 2000.

 

“Anode Hole Generation Mechanisms,” (Invited paper) A. Ghetti,  M. A. Alam, and J.  Bude,   Microelectronics Reliability, 41(9), pp. 1347-1354, 2001.

 

“Simulation of Semiconductor Quantum Well Lasers,  M.  A. Alam, M. Hybertsen, R. K. Smith, G. A. Baraff,  Special issue of IEEE Transaction of Electron Devices (Invited paper),   47 (10), pp. 1917-1925, 2000.

 

“Multi-Wavelength DFB Laser Array with Integrated Spot Size Converters,” L. J. P. Ketelsen, J. Grenko, S. Sputz, M. Focht, J. Vandenberg, J. E. Johnson, C. Reynolds, J. Geary, J. Levkoff, K. Glogovsky, D. Stampone, S. N. G. Chu, F. Walters, J.  Lentz, M. A. Alam, R. People, M. S. Hybertsen, R. Leibenguth, G. Przybylek, L. Zhang,  Journal of Quantum Electronics, 36(6), pp. 641-648, 2000.

 

“Monolithically Integrated Semiconductor Optical Amplifer and Electro-Absorption Modulator with Dual Waveguide Spot-size Converter,”  J. Johnson, L. Ketelsen, J. Grenko, S. Sputz, J. Wandenberg, M. Focht, C. Reynolds, R. People and  M. Alam,   Selected Topics in Quantum Electronics, 6(1), pp. 19-25, 2000.

 

“Modeling of Photoluminescence in the Multi-Quantum Well Laser Heterostructures,” A. Grinberg, M. A. Alam, S.K. Sputz,  IEEE J. of Quantum Electronics, 35(1), pp. 84-92, 1999.

 

“Role of p-doping Profile and Regrowth on the Static Characteristics of 1.3 um MQW InGaAsP-InP Lasers: Experiment  and Modeling,”   G.L. Belenky,  C.L. Reynolds,  D.V. Donetsky,  G.E. Shtengel, M.S. Hybertsen, M. A. Alam,  G. A. Baraff, R.K.  Smith, R. F. Kazarinov, J. Winn,  L.E. Smith, Journal of Quantum Electronics, 35(10),  pp. 1515-1520, 1999.

 

“Simulation and Characterization  of Selective Area MOCVD Process,”  M. A. Alam, R. People, S.K. Sputz, D. Lang, J.E. Johnson, S. Chu, T. Perbell, M. Hybertsen, J. Vandenberg, K. Evans-Lutterodt, E. Isaacs, L. Gruezke, M. Marcus,  Applied Physics Letters, 74, p. 1617,  1999.

 

 “Synchrotron X-Ray Micro-Diffraction Diagnostics of Multilayer Optoelectronic Devices,  Z-H. Coi, E. Isaacs, K. Evans-Lutterodt, J. Grevko, R. Blew, S. Sputz, J. M.  Vandenberg, R. People, M. Alam, M. Hybertsen, L. Ketelsen, Applied Physics Letters, 75, p. 100, 1999.

 

 “Effect of Carrier Transport on the L-I Characteristics of Quantum Well Lasers in the presence of Spatial Hole Burning,”  M. A. Alam,   IEEE J. of Quantum Electronics, 33, pp. 1018-1024, 1997.

 

“Effects of Carrier Heating on Laser Dynamics – A Monte Carlo Study,” M.  A. Alam and M.S. Lundstrom,  IEEE Journal of Quantum Electronics, 33, pp. 2209-2220, 1997.

 

 “A Two Dimensional Simulation of Organic Transistors,'' M. A. Alam,  A. Dodabalapur, and M. Pinto,  Transaction on Electron Devices Special Issue on Organic and Polymeric Devices,  44. pp. 1332-1337, 1997.

 

“Influence of Quasi-Ballistic Base Transport on the  Small Signal Y-Parameters of Si Bipolar Transistors,”  M. A. Alam, M. Schroter, Mark S. Lundstrom, IEEE Electron  Device Letters, 17 (4), pp. 184-186, 1996.

 

“A Transition Matrix Approach for Monte Carlo Simulation of Coupled Electron/Phonon/Photon Dynamics,  M. A. Alam and M.S.  Lundstrom,  Applied Physics Letters, 67 (4), pp. 512-514, 1995.

 

“ A Small Signal, One flux Model for Short Base Transport,”  M.  A. Alam, S. Tanaka, and M.S. Lundstrom, Solid State Electronics, 38, pp. 177-182, 1995.

 

 

 1990-1995

 

 “Simple Analysis of Carrier Transport and Build-Up in Separate Confinement Heterostructure Quantum Well Lasers,” M. A. Alam and M.S. Lundstrom, IEEE Photonics Technology Letters, 6 (12), pp. 1418-1420, 1994.

 

“Simulation of AlGaAs/GaAs HBTs by Scattering Matrix Solution to the Boltzmann Equation,  M. A. Alam and M.S. Lundstrom, Semiconductor Science and Technology, 9, pp. 862-864, 1994.

 

“Scattering Matrix Formulation of Electron Transport in Compound Semiconductor Devices,  M. A. Alam and M.S. Lundstrom, Solid State Electronics, 37 (8), pp. 1509-1520, 1994.

 

“A Critical Examination of the Assumptions Underlying Macroscopic Transport Equations for Silicon devices,”   M.A. Stettler, M.A. Alam and M. Lundstrom,,  IEEE Transaction on Electron Devices, 40 (4), pp. 733-740, 1993.

 

“ Formulation of Boltzmann Equation in terms of Scattering Matrices,”  M. A. Alam,  M.A. Stettler and M.S. Lundstrom,  Solid State Electronics, 36, pp. 263-271, 1993.

 

“ Spectral Flux Method to Solve Boltzmann Equation,”  M.A. Alam, M.A. Stettler and M.S. Lundstrom,  Journal of Applied Physics, 73 (10), pp. 4998-5003, 1993.

 

“A Self-consistent Analysis in presence of Phase-randomizing Processes for Double-barrier Structures,”  M. A. Alam, R.A. Morrisey and A.N. Khondker, Journal of  Applied  Physics, 71, pp. 3077-3090, (1992).

 

“On Density of States, Electron Transport Mechanisms and Chemical Potentials in Mesoscopic system,”  A.N. Khondker and M. A. Alam,  Physical Review B15, 45, pp. 8516-8525, 1992.

 

“Influence  of Phase-breaking processes on Shot Noise in Resonant Tunneling Devices,” M. A. Alam and A.N. Khondker, IEEE Transaction on Electron Devices, 39, pp. 2184-2186, 1992.

 

“Are there extra scattering mechanism in the Well of a resonant-tunneling diode?” R. A. Morrisey, M. A. Alam  and A.N. Khondker, Physica B, 182, pp 61-63, 1992.

 

“Landauer-Buttiker Conductance Formulas in Presence of Inelastic Scattering,  A.N. Khondker and M. A. Alam,  Physical Review B15, 44, pp. 5444-5452, 1991.

 

“Application of Quantum Mechanical Wave Impedance in the Solution of Schroedinger's Equation in Quantum  Well,”  S.M.F. Kabir, M.R. Khan, M. A. Alam, Solid State Electronics, 34, pp. 1466-1468, 1991.

 

“An Efficient Self-consistent Model for Resonant Tunneling Structures,  M. A. Alam and A.N. Khondker,  Journal of  Applied Physics, 68, pp. 6501-6503, 1990.

 

Invited Conference Presentations

2010

 

           “Reliability Aware Circuit Design”, Invited Tutorial Lecture at International Electron Device Meeting as a part of the course on “Reliability and Yield in Advanced Integrated Technologies, Dec. 15, 2010.

 

          “Regarding the Universality of Negative Bias Temperature Instability”, International Integrated Reliability Workshop, Lake Tahoe, Oct. 17,  2010.  

 

          “Untangling the Essence of Bulk Heterostructure Organic Solar Cells,: Why Complex need not be Complicated”,  Molecular Foundry Symposium on ‘Organic Photovoltaics: Experimental and Theory’, Berkeley, California, Oct. 1, 2010.

 

“Transport in Random Materials”, IEEE Distinguished Lecture at KTH Royal Institute of Technology, Sweden, Sept. 23, 2010.

 

“Modeling and Simulation of Photovoltaic Technology”, Silicon Valley Distinguished Lecture, San Jose, California, Aug. 24, 2010.

 

“Three Easy Pieces of Nanobiosensing” , Invited Lecture at the Summer Institute on Biosensing and Bioactuation, University of Illinois at Urbana Champaign,  July. 22, 2010.

 

“On Randomness and Variability of Electronic Devices”, Intel-NCN Summer School, Dalian Technological University, Dalian, China, June 1-5, 2010.

 

“Intrinsic Reliability of Thin Film Solar Cells”,  Invited presentation at International Reliability Physics Symposium, May, 2010.

 

“Theory of Organic Solar Cells and its Implications for Solar Cell Design”,  Keynote Presentation, IEEE International Conference on Microelectronics, University of Nis, Serbia, May 17, 2010.

 

           “The Future of Microelectronics is … Macroelectronics”,  IEEE Distinguished Lecture, Idaho State University, April 08, 2010.

 

“Reliability Aware Circuits”,  IEEE Distinguished Lecture, Micron, Boise, Idaho, April 08, 2010.

 

“Physical Principles and Phase Space of Nanobiosensors”,  Invited talk at American Physical Society March Meeting, Oregon, March 15, 2010.

 

“The Physics and Technology of Nanonet Electronics”, Condensed Matter Seminar, Physics Department, Purdue University, April 23, 2010.

 

          

 2009

 

            “Nanonet Electronics” , IEEE Distinguished Lecture, Marquette University,  Jan. 27, 2009.

       

            “On the Physics of Biosensing”, Nanoelectronic Devices for Defense and Security (Nano-DDS) Conference, Sept. 2009.

 

             “Nanotube Thin Films for Electronic Applications”, MRS Spring Meeting, Boston, 2009.

 

 

2008

 

“Physics and Technology of Nanonet Electronics”, Columbia University, July, 2008.

 

“How ‘form defines function’ in third generation Photovoltaics”,  Joint India-US Workshop on Scalable Nanomaterials for Enhanced Energy Transport, Conversion and Efficiency, 2008.

 

“Scaling Limits of Biosensors,” Plenary Presentation, IEEE Conference on Ultimate Integration in Silicon, Udine, Italy. 2008.

 

“Physical Principles of Nanonet Electronics,” Keynote Presentation, 5-th Annual Conference on Foundation of Nanoscience (FNANO08),  Snowbird, Utah, April 23,  2008.

 

“Nanobiosensors in Nanomedicine”,  International Conference on Nanotechnology : Opportunities and Challenges, Saudi Arabia, June 2008.

 

“Reliability Aware Design of Future Electronics,” Plenary Presentation, European Symposium on Reliability of Electron Devices, Maastricht, Netherlands, Sept.  2008

 

“Nanonet Electronics,” IEEE Distinguished Lecture, Rutgers University, April, 2008.

 

“The Future of Biosensors,” IEEE Distinguished Lecture, Ball State University, April, 2008.

 

 2007

 

           “Physics of Nanobiosensors”,  P. Nair and M. Alam, Nano DDS, Washington DC, June 18-20, 2007.

 

“Physics of Nanonet Electronics”, IEEE Distinguished Lecture, University of Texas at Arlington, Nov. 8, 2007.

 

“Computational Modeling: An Industrial Engineer’s Perspective”, Excellence in Computer Simulation, UC Berkeley, Nov. 6, 2007.

 

“Theory of Pick-up Transistors and Its Potential to Transform Macroelectronics and Biosensing”, IEEE New-Jersey Section presentation, May 7, 2007.

 

“Performance Limits of Nano-composie Transistors and Nanobio-Sensor”, M. Alam, N. Pimparkar, S. Kumar, P. Nair, J. Murthy, 65th International Device Research Conference, Notre Dame, June 18-20, 2007.

 

“Nano for Bio?”, M. Alam, 65th Device Research Conference Rump Session, Notre Dame, June 18-20, 2007.

 

“Theory of Pick-up Transistors and Its Potential to Transform Macroelectronics and Biosensing”, IEEE New-Jersey Section presentation, May 7, 2007.

 

“Simulation of Nanobiosensors”, M. A. Alam and P. Nair, IEEE-Nano, Hong-Kong, Aug. 2-5,  2007.

 

“Scaling Limits of Nanoelectromechanical Sensors”, M. Alam, P. Nair, and R. Bashir, International Workshop on Nanomechanical Sensors, Montreal, May 27-30, 2007.

 

“ Percolation and Fractal Geometry: How Spatial Inhomogeneity is Reshaping Modern Semiconductor Devices”, M. Alam and N. Pimparkar, S. Kumar, J. Murthy, Device Research Conference, Notre Dame, Indiana,  June 20-22,   2007.

 

“Frontiers and Future of Computational Microelectronics: Perspective of a Device Physicist”, M. Alam, Electron Device Society Distinguished Lecture, Engineers’ Institute of Bangladesh, Dhaka, Bangladesh, July 20, 2007.

 

“Reliability-Aware VLSI Circuit Design”, M. Alam, Invited Tutorial at the 14th International Conference on Physical and Failure Analysis of Integrated Circuits, Bangalore, India, July 11-13, 2007.

 

“Iddq as a Probe into the Dynamics of Time-Dependent Degradation”, M. Alam, K. Kang, and K. Roy, 14th International Conference on Physical and Failure Analysis of Integrated Circuits, Bangalore, India,  July 11-13, 2007.

 

“Theory and Performance of Nanocomposite Sensors  M. Alam and N. Pimparkar,” Microwave Theory and Techniques Conference, Hawaii, June 20-22,  2007 (Tutorial).

 

 

2006

 

“Performance of Nanocomposite Transistors”, M. Alam, Army Research Organization Conference on “Tools for Nanomanufacturing”, West Lafayette, IN, Oct. 2-4, 2006.

 

“A Computational Study of Carbon Nanotube Optoelectronic Devices” Y. Yoon, Y. Ouyang, M. Alam, and J. Guo, Optics East,  Boston, MA,  Oct. 1-4, 2006.

 

“Nanocomposite Transitors: A Novel Technology for Macroelectronic Applications”, M. Alam, Columbia University ECE Lecture Series, Sept. 9, 2006.

 

“Performance Limits and Design Considerations of Nanobio Sensors,” M. Alam and P. Nair, 208 ECS Meeting: Symposium on Bioelectronics, Biointerfaces, and Biomedical Interfaces, Cancun, Mexico, Oct. 29-Nov. 3, 2006.

 

“Performance Limits of Nanobio Sensors”, M. Alam and P. Nair, The 2nd Meeting of American Academy of Nanomedicine, National Academy of Sciences, Washington, Sept. 9-10, 2006.

 

“Geometry of Diffusion defines Performance of Nanobio Sensor”, M. Alam and P. Nair, 4th Annual Molecular Conduction and Sensors Workshop, Charlottesville,  July 26-28, 2006.

 

“Geometry of Diffusion and Performance Limits of Nanobiosensors”, M. Alam and P. Nair, Nanotechnology 501 Lecture Series, Purdue University, Nov. 2006. ( http://www.nanohub.org/resources/2048/)

 

“Reliability Physics and NBTI Degradation”,  M. Alam, Applied Material Distinguished Lecture Series, Aug. 21, San Jose, CA, 2006.

 

 “Negative Bias Temperature Instability: A Comprehensive Analysis of a Complex Phenomena,” M. A. Alam, IEEE International Reliability Physics Symposium, Dallas, TX, April 4-6, 2006.

 

“A Simple view of NBTI Degradation,  M. Alam, 11th International Workshop on Computational Electronics, TU Vienna, Austria,  May 25-27, 2006.

 

"Negative Bias Temperature Instability: Physics, Projections, and Reliability Implications", M. Alam, Workshop on Gate stack Technology and Physics, Tokyo, Japan, Feb. (2006).

 

“NBTI Reliability: Measurement and Modeling”, M. Alam,  Reliability Topical Research Conference, Austin, TX, Oct. 23-26, 2006.

 

 “A Review of New Characterization Methodologies for TDDB and NBTI’, M. A. Alam, 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, 2006.

 

 

2005

 

 “Negative Bias Temperature Instability,  M. A. Alam, International Reliability Physics Symposium, Dallas, TX, April, 2005.

 

"Elementary Considerations in Reliability Physics: How a simple model  illuminates the mechanics of NBTI degradation, resolves a 40-year old puzzle, and establishes protocol for lifetime extrapolation”, M. Alam, Semiconductor Interface Specialist Conference, Virginia, Dec. (2005).

 

“The long and Short of Pick-up Transistors ” , M. Alam, N. Pimparkar, S. Kumar, and J. Murthy, International Semiconductor Device Research Society, Maryland, Dec. 2005.

 

"Negative Bias Temperature Instability: Theory and Modeling ", M. Alam, International Reliability Physics Symposium, San Jose, CA,  April, 2005.

 

“On Reliability of Microelectronic Devices: An Introductory Lecture on Negative Bias Temperature Instability”, M. Alam, Nanotechnology 501 Lecture Series, Purdue University, Oct. 2005. ( http://www.nanohub.org/resources/193/)

 

“Simulation of Electronic Detection of DNA”, P. R. Nair and M. A. Alam, Workshop on Electronic Detection of Bio-molecules, Virgina, 2005.

 

 “Elementary Consideration of NBTI Degradation,” M. Alam, IRPS Tutorial, April 5-10, San Francisco, CA (2005).

 

 “On Reliable Circuits and Systems: How Reliability Considerations Are Reshaping Oxide Scaling, Device Geometry, and VLSI Algorithm,” M. Alam, H. Kuflouglu, B. Paul, K. Kang, and K. Roy, ICICDT Meeting,  Austin, Texas, (2005).

 

 

2000-2004

 

 “Mechanism of Negative Bias Temperature Instability in CMOS Devices: Degradation, Recovery, and Impact of Nitrogen,” S. Mahapatra, M. Alam, P. Bharath Kumar, T. R. Dalei, and S. Saha, IEDM Meeting, San Francisco, CA (2004).

 

“Current Status of Modeling of NBTI Phenomenon,” M. Alam, IRPS Year End Review, April 2-4, Phoenix,  Arizona (2004).

 

 “The Physics of Soft Breakdown and its Implication for Integrated Circuits,”  M. Alam, B. Weir, P. Silverman, and K. Smith, International Reliability Physics Symposium,  April 2-4, Dallas, Texas (2003).

 

“Prospects of Using Thin Oxidies  for Silicon Nanotransistor,”  M. A. Alam, B. E. Weir, and P.J. Silverman,  International Workshop on Gate Insulators,  Jan. 20-22, Tokyo,  Japan (2002).

 

“Low -Voltage Gate Dielectric Reliability,”  B. Weir, M. Alam, P. Silverman, and Y. Ma,   The Ninth International Symposium on Silicon Materials, Science, and Technology,  May 20-23,  Philadelphia, PA,  (2002).  

 

“Microscopic Simulation of Multi-Quantum Well Semiconductor Diode Lasers,” M. S. Hybertsen, B. Witzig,man,  M. A. Alam, and R. K. Smith,  8th International Workshop on Computational Electronics, Beakman Institute, University of Illinois, Urbana-Champaign, IL, Oct. 15-18,  (2001).

 

 “A Computational Model for Oxide Breakdown - Theory and Experiments,”  M. A. Alam, B. Weir, J. Bude, P. Silverman, and A. Ghetti,  12-th Biennial INFOS Conference, June 20-23, Udine, Italy  (2001) 

 

 “A Computational Study of Oxide Reliability,”  M. A. Alam, B. Weir, and P. Silverman,  31st IEEE Semiconductor Interface Specialists Conference, San Diago, California, Dec. 7-9, (2000).

 

 “Physics and Prospects of sub-2nm Oxides,”  M. A. Alam, B. Weir, P. Silverman, J. Bude, A. Ghetti, Y. Ma,  M. Brown, D. Hwang, and A. Hamad,   4-th International Symposium on the Physics and Chemistry of SiO2 and Si-SiO2 interfaces, May 15-18, Toronto, Canada,  (2000).

 

“Ultra-thin Oxide Reliability Projections and Alternate Dielectrics,”  B. Weir, G. Wilk, M. Alam, P. Silverman, F. Baumann,  C. Monroe, A. Ghetti, J. Bude, G. Timp, A. Hamad, Y. Ma, M. Brown, D. Hwang, T. Sorsch, A. Ghetti,  1st European Workshop on Ultimate Integration of Silicon,  Grenoble, France, Jan. 20-21, (2000).

 

 

1993-1999

 

 “Gate Oxides in 50nm Devices:  Thickness Uniformity Improves Projected Reliability,”  B. Weir, M. Alam, P. Silverman, A. Hamad, F. Baumann, G. Timp, A. Ghetti, Y. Ma, M. Brown, and T. Sorsch,  IEEE International Electron Devices Meeting, Dec. 2-4, Washington, DC (1999).

 

 “Future ULSI Devices with 1.5-2.5nm Gate Oxides,”  B Weir, P. Silverman, M. Alam, J. Bude, D. Monroe, N. Zhao, A. Hamad, F. Li, Y. Ma,  M. Brown, D. Muller, A. Ghetti, F. Baumann, Y. Kim, T. Sorsch, and G. Timp,  1st International Workshop on Dielectric Thin Films for  Future ULSI Devices:  Science and Technology, Tokyo, Japan, October (1999).

 

 “Soft Breakdown in Ultra-Thin Oxides,”  B. Weir, P. Silverman, G. Alers, D. Monroe, M. Alam, T. Sorsch, M. Green, G. Timp,Y. Ma, M. Frei, C. T. Liu, J. Bude, and K. Krisch,  Materials Research Society, San Francisco, CA, June (1999).

 

 “Strategies of Surface Preparation for Ultra Thin Gate Dielectrics,” J. Rosamilia, J. Sapjeta, T. Boone, M. Alam, F. Baumann, R. Masaitis, S. Moccio, D. Muller, P. Silverman, T. Sorsch, G. Timp, B. Weir, Y. Chen, J. Liu, Y. Ma, S. Kuchne, R. Myricks, B. DeSelms, G. Higashi, J. Corbacho, P. Dominguez, M. Rodriguez, B. Chung, G. Marshall, and C. Pearce, Presentation at the Symposium of Cleaning Technology in Semiconductor Mfg., Honolulu, HI, October (1999).

 

“Process Simulation of Selective Area MOCVD Growth for Optoelectronic Integrated Circuits,” M. A. Alam, R. People, and M. S. Hybertsen,  SPIE-1999 Photonics West Meeting:  Physics and Simulation of Optoelectronic Devices, Jan. 23-29, San Jose, CA (1999).

 

“Role of doping profile on semicnonductor laser performance: simulation and experiment,” M. Hybertsen, M. Alam,  G. Baraff, K. Smith, G. Belenky, D. Dotensky, G. Shtengel, C. Reynolds, R. Kazarinov, 18-th CLEO Conference, Boston,  MA (1999). 

 

“Critical Microscopic Processes in Semiconductor Lasers,” M. A. Alam, M. Hybertsen, G. Baraff, and R. K. Smith,  MRS Fall Meeting, Symposium B:  Computational Approaches to Predicting Optical Properties of Materials,  Boston, MA 11/29-12/2/99

 

“Comprehensive Simulation of Planar Selective Area Growth Process and Nonplanar Epitaxy Using a 3D Vapor Phase Model,  M. A. Alam,  Presented at the 9th Bienneial Workshop on Organometallic Vapor Phase Epitaxy,  Florida, May, (1999).

 

 “Bandgap-Engineered Optical Interconnects Using Selective Area Growth MOCVD Process,  M. A. Alam, R. People, S.K. Sputz, D. Lang, J.E. Johnson, S. Chu,  T. Perbell, M. Hybertsen, J. Vandenberg, K. Evans-Lutterodt,  E. Isaacs, L. Gruezke, and M. Marcus.   40-th Electronic Materials Conference (EMC), Charlotsville, Virgnia,  July (1998).

 

“Fabrication and Modeling of Optical Interconnects Using Selective Area Growth Metalorganic CVD,”   R. People, M. A. Alam, M. S. Hybertsen, S. Sputz, E. Isaacs, K. Evans-Lutterodt,  J.  Vandenberg, T. Siegrist, T. Pernel, D. V. Lang, S. N. G. Chu, J. E. Johnson, L. Ketelsen  Presentation at the Department of Physics, Howard University, (October 1998).

 

“Wavelength Stability, Performance, and Future Trends forElectroabsorption Modulated Sources,”  L. Ketelsen, J. Grenko, S. Sputz, E. Issacs, J. Vandenberg, J. Johnson, S.G. Chu, M. Hybertsen, K. Evan-Lutterodt, R. Hartman, M. Geva, R. Glew, C. Pinzone, L. Cheng, P. Parayanthal, R. People, and M. A. Alam , 16-th CLEO Conference, San Diego, CA (Feb, 1998).

 

“Simulation of Quantum Well Lasers,”  M. A. Alam, R. K. Smith, M. S. Hybertsen, G. A. Baraff, and M. R. Pinto,  SPIE  Conference on Physics and Simulation of Optoelectronic Devices,  Feb. 4-10, San Jose, CA (1997).

 

“Comprehensive Simulation of Semiconductor Lasers,” M. A. Alam, R.K. Smith, M.S. Hybertsen, G.A. Baraff, and M.R. Pinto,  24-th International Conference on Compound Semiconductors (ICCS),  Sept. 10-12, San Diago, CA (1997).

 

“Numerical Aspects of Quantum Well Laser Simulation,”  M. A. Alam, R. K. Smith, M. S. Hybertsen, G. A. Baraff, and M. R. Pinto,  Presentation at the International Workshop on Computational Electronics, Notre Dame, Indiana, May. 20-24, (1997).  

 

“Transport and Hot Carrier Dynamics for Semiconductor Lasers,  M. A. Alam,  presented at the University of Connecticut Center for Optoelectronics, May 10, (1997).

 

“Predictive Simulation for Nanoscale Silicon Technology,  M. R. Pinto, M. A. Alam, and J. D. Bude.  VLSI Symposium, Taiwan (1996).

 

“Numerical Study of Hot-phonon Effects in Quantum Well Lasers,” M. A. Alam and M. S. Lundstrom, presented at the SPIE Conference on Physics and Simulation of Optoelectronic Devices,  San Jose, CA, Feb. 4-10, (1995).

 

“A Transition Matrix Study of Laser Dynamics,” M. A. Alam and M.S. Lundstrom, presented at the International Workshop  on Computational Electronics, Portland, Oregon, May 17-21 (1994).

 

“Scattering Matrix Approach to Device Simulation,''  M.A. Alam and M.S. Lundstrom,  International Semiconductor Device Research Symposium (ISDRS),  Dec. 2-4, (1993).

 

Publications in Conference Proceedings

2009

 

 

 

 

2008

“Device Optimization for Organic Photovoltaics with CNT Networks as Transparent Electrode,” N. Pimparkar, M. Chowala, M. Alam, IEEE Photovoltaics Specialist Conference, Aug. 2008. PDF

“Surface Passivation Issues for Nanoplate Sensors,” Brian R. Dorvel, Oguz H. Elibol, Bobby Reddy, Jr., Pradeep R. Nair, Muhammad A. Alam, Rashid Bashir, Proc. of American Chemical Soceity, 2009.

“Mobility Degradation Due to Interface Traps in Plasma Oxinitride PMOS Devices”, A. E. Islam, V. D. Maheta, H. Das, S. Mahapatra, and M. A. Alam, Proc. of International Reliability Physics Symposium, Apr 2008, pp. 87-96.   PDF      Breeze Presentation

“Separation method of hole trapping and interface trap generation and their roles in NBTI Reaction-Diffusion model”, J. H. Lee, W. H. Wu, A. E. Islam, M. A. Alam and A. S. Oates, Proc. of International Reliability Physics Symposium, Apr 2008, pp. 745-746. PDF

“Single Event Upsets in Floating Gate Memory Cells,” N. Z. Butt, and M. A. Alam, Proc. of International Reliability Physics Symposium, Apr 2008, pp. 547-555. PDF

“A Comprehensive Analysis of Off-State Stress in Drain Extended PMOS Transistors: Theory and Characterization of Parametric Degradation and Dielectric Failure,” D. Varghese, V. Reddy, H. Shichijo, D. Mosher, S. Krishnan, and M. A. Alam, Proc. of International Reliability Physics Symposium, Apr 2008, pp. 566-574. PDF

 

2007

 

“A Bottom-up Redifinition for Mobility and Effect of Poor Tube-Tube Contact on Performance of CNT-TFT" N. Pimparkar and M. Alam, Device Research Conference, South Bend, June 18-20, 2007. PDF

 

Estimation of Statistical Variation in Temporal NBTI Degradation and its Impact in Lifetime Circuit Performance,”, K. Kang, S. P. Park,M. A. Alam, and K. Roy, Proc. of 2007 International Conference on Computer Aided Design (ICCCAD), (Finalists for the IEEE/ACM William J. McCalla ICCAD Best Paper Award), Nov. 2007. PDF

 

“Interface Damage as a Predictor for Gate Dielectric Breakdown during Off-State Stress of Drain Extended NMOS Transistors,” D. Varghese, H. Kufluoglu, V. Reddy, S. Krishnan, M. Alam, International Electron Devices Meeting (IEDM), Washington DC, USA, Dec 2007. PDF

 

“Theory and Practice of Ultra-fast Measurements for NBTI Degradation: Challenges and Opportunities”, A.E. Islam, E. N. Kumar, H. Das, S. Purawat, V. Maheta, H. Aono, E. Murakami, S. Mahapatra, and M.A. Alam, International Electron Devices Meeting (IEDM), Washington DC, USA, Dec 2007. PDF

 

“Multi-probe Two-Dimensional Mapping of Off-State Degradation in DeNMOS Transistors: How and Why Interface Damage Predicts Gate Dielectric Breakdown,” D. Varghese, H. Kufluoglu, V. Reddy, H. Shichijo, D. Mosher, S. Krishnan, M. Alam, International Electron Devices Meeting (IEDM), Washington DC, USA, Dec 2007. PDF

 

 “Material Dependence of NBTI Physical Mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A Comprehensive Study by Ultra-Fast On-The-Fly (UF-OTF) IDLIN Technique,” E. N. Kumar, V. D. Maheta, S. Purawat, A. E. Islam, C. Olsen, K. Ahmed, M. A. Alam and S. Mahapatra,  International Electron Devices Meeting (IEDM), Washington DC, USA, Dec 2007.  PDF

 

 “Characterization and Estimation of Circuit Reliability Degradation under NBTI using On-Line Iddq Measurement,” K. Kang, K. Kim, A. E. Islam, M. Alam, and K. Roy, Design Automation Conference, June 2007, pp. 358-363 (Nominated for best paper Award). PDF

 

“Estimation of NBTI Degradation Using On-Chip Iddq Measurement,” K. Kang, M. Alam, K. Roy, Proceedings of International Reliability Physics Symposium, April 2007, pp. 10-16. PDF

 

“Selective Heating Characterization of Nanoplate Devices for Sensing Applications,” “O.H. Elibol, B. Reddy, Jr. , P.R. Nair, M.A. Alam ,D.E. Bergstrom and R. Bashir, NSTI Nanotech Conference, Santa Clara, CA, May 20-24,  2007.

 

 “On The Physical Mechanism of NBTI In Silicon Oxynitride P-MOSFETs: Can Differences In Insulator Processing Conditions Resolve The Interface Trap Generation vs. Hole Trapping Controversy?—S. Mahapatra, K. Ahmed, D. Varghese, A.E. Islam, G. Gupta, L. Madhav, D. Saha, and M.A. Alam, Proceedings of International Reliability Physics Symposium, paper 1.1, 2007.  PDF

 

“Prediction of Five-fold Increase in Current Gain of Optimally Aligned CNT Network over Random Networks”, Ninad Pimparkar, Coskun Kocabas, Seong Jun Kang, John Rogers and Muhammad Ashraful Alam, Proc. of MRS Spring Meeting, 2007.  PDF

 

 

2006

 

“A Computational Study of Carbon Nanotube Optoelectronic Devices” Y. Yoon, Y. Ouyang, M. Alam, and J. Guo, Proc. Optics East,  p. 1-12,  2006.

 

“Simulation of Carbon Nanotube FETs Including Hot-Phonon and Self-Heating Effects  S. Hasan, M. Alam, M. Lundstrom, IEDM Technical Digest, paper 31.4, 2006. PDF

 

 “Gate Leakage vs. NBTI for Plasma Nitrided Oxides: Characterization, Physical Principles and Optimization”, A. E. Islam, G. Gupta, S. Mahapatra, A. T. Krishnan, K. Ahmed, F. Nouri, and M. A. Alam, IEDM Tech. Digest, pp. 12.4.1, December 2006. PDF

 

“Universality of Off-Degradation in Drain Extended NMOS Transistors”, D. Varghese, H. Kufluoglu, V. Reddy, H. Shichijo, S. Krishnan, and M. Alam . IEDM Technical Digest, paper. 29.3, 2006. PDF

 

“Scaling Limits of 1T-OC DRAM Cells,  N. Butt and M. Alam, Proc. of SIDPAD, 2006.

 

"Theoretical Model for Nanobundle Network Transistors," N. Pimparkar, J. Guo, M. A. Alam, Proc. of NSTI Nanotechnology Conference, May 7-11, 2006, Boston, MA, 2006. PDF

 

 “Temporal Parametric Yield Model of Nano-Scale SRAM Array under Negative Bias Temperature Instability," K. Kang, H. Kufluoglu, M. A. Alam and K. Roy, Proc. of SRC Student Symposium, 2006.

 

  “Temporal Performance Degradation under NBTI: Estimation and Design for Improved Reliability of Nanoscale Circuits,“ . B. Paul, K. Kang, H. Kufluoglu, M. A. Alam and K. Roy, Proc. of Design Automation and Test in Europe, pp. 780-785, March 2006. PDF

 

 “A Review of New Characterization Methodologies for TDDB and NBTI”, M. A. Alam,  Proc. of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, 2006.

 

 “Efficient Transistor-Level Sizing Technique under Temporal Performance Degradation due to NBTI,” K. Kang, H. Kufluoglu, M. A. Alam and K. Roy, Proc. of IEEE International Conference on Computer Design, October 2006, pp. 216-221. PDF

 

 

2005

 

“Thermal Transport in Nanotube Composites for Large-Area Macroelectronics,” Kumar S., Murthy, J., and Alam, M. A,  Proceedings of NHTC, ASME Summer Heat Transfer conference, July 17-22, 2005, San Francisco, California, USA.

 

 “Simulation of Electronic Detection of DNA using Si-NW sensors,” P. R. Nair and M. A. Alam, Proc. of Electronic Recognition of Bio-Molecules-2, 2005.

 

"Performance Assessment of Sub-Percolating Nanobundle Network Transistors by an Analytical Model," N. Pimparkar, J. Guo, and M. A. Alam, IEDM Tech. Digest, vol. 21.5, pp. 541, 2005. PDF

 

On The Dispersive versus Arrhenius Temperature Activation of NBTI Time Evolution in Plasma Nitrided Gate Oxides: Measurements, Theory, and Implications,  D. Varghese, D. Saha, S. Mahapatra, K. Ahmed, F. Nouri and M. Alam, Proceeding of International Electron Device Meeting, 2005. PDF

 

"On Quasi-Saturation of Negative Bias Temperature Degradation," Proc. of 208th Meeting of The Electrochemical Society (ECS),  M. A. Alam and H. Kufluoglu,  October, 2005. PDF

 

 “On Reliable Circuits and Systems: How Reliability Considerations Are Reshaping Oxide Scaling, Device Geometry, and VLSI Algorithm,”  M. A. Alam, H. Kufluoglu, B. Paul, K. Kang and K. Roy,  Proceedings of ICICDT, 2005. PDF

 

 “Computational Modeling of Negative Bias Temperature Instability for Reliability-Aware VLSI Design,“ H. Kufluoglu, M. A. Alam, B. C. Paul, K. Kang, K. Roy Semiconductor Research Corporation (SRC) TECHCON Meeting, October 2005. PDF

 

 “Theory of Current-Ratio Method for Oxide Reliability: Proposal and Validation of a New Class of Two-Dimensional Breakdown-Spot Characterization Techniques,” M. Alam, D. Monroe, B. Weir, and P. Silverman, Proceedings of International Electron Device Meeting, 2005. PDF

 

 

2004

 

“Simulation of Thermal Transport in Nano-wire Composites for Macro-Electronics Applications,” Kumar S., Murthy, J., and Alam, M. A., Proceedings of Integrated Nanosystems, ASME Conference, , Pasadena, California, USA, September 22-24, 2004.

 

“Monte-Carlo Simulation of Carbon Nanotube Devices”, S. Hasan J. Guo, M. Vaidyanathan, M. A. Alam, and M. Lundstrom,  Proc. of International Workshop on Computational Electronics, West Lafayette, IN, Oct. 25-27, 2004.

 

“A Geometrical Unification of The Theories of NBTI and HCI Time-Exponents and Its Implications for Ultra-scaled Planar and Surround-Gate Geometries,” H. Kufluoglu and M. A. Alam,  IEEE International Electron Devices Meeting Proceedings, pp. 113-116, December 2004. PDF

 

 “A Unified Modeling of NBTI and Hot Carrier Injection for MOSFET Reliability,” H. Kufluoglu and M. A. Alam, IEEE International Workshop on Computational Electronics-10 Extended Abstracts, pp. 28-29, 2004.  PDF

 

 “Mechanism of Negative Bias Temperature Instability in CMOS Devices: Degradation, Recovery, and Impact of Nitrogen,” S. Mahapatra, M. Alam, P. Bharath Kumar, T. R. Dalei, and S. Saha, Proc. of  IEDM, 2004.

 

 “Gate dielectric breakdown: a focus on ESD protection,” B. E. Weir, C.-C. Leung, P. J. Silverman, and M. Alam,  Proc. of IRPS, pp. 399-404, 2004.

 

 “Methodology for accurate assessment of soft-broken gate oxide leakage and the reliability of VLSI circuits,” P. M. Mason, A. J. La Duca, C. H. Holder, D. K. Hwang, and M. Alam,  Proc. of IRPS, pp. 430-434, 2004.

 

 

2003

 

“A Phenomenological Theory of Correlated Multiple Soft Breakdown Events in Ultrathin Gate Dielectrics  (Best Paper Award)”, M. Alam and R. K. Smith, Proc. of International Reliability Physics Symposium, pp. 406-411, 2003. PDF

 

 “A Critical Examination of the Mechanics of Dynamic NBTI for PMOSFETs ,   M. A. Alam,  IEDM Technical Meeting, pp. 345-348, (2003).

 

“A New Observation of Bias-Temperature Instability in Thin Gate Oxide p-MOSFETs,  S. Mahapatra, P. B.  Kumar, and M. A. Alam,   IEDM Technical Meeting, pp. 337-340, (200

 

“A New Model for Atomic Layer Deposition, and its Application to the Nucleation and Growth of HfO2 Gate Dielectric Layers,  M. A. Alam and M. L. Green, Proc. of the ALD Conference, Extended Abstract No. 3.2,  (2003).

 

 

1999-2002

 

“Effect of 2nd nearest-neighbors and interface charge on core level shifts in Zr, Hf-Silicates,”  G.W. Wilk, M. A. Alam,  B.W. Busch, and R.L. Opila,  Proc. 33rd IEEE Semiconductor Interface Specialists Conference,  paper 2.2 (2002).

 

“Statistically Independent Soft-Breakdowns Redefine Oxide Reliability Specifications,”  M. A. Alam, R.K. Smith, B.E. Weir, and P.J. Silverman, IEDM Technical Digest, pp. 151-154, (2002). PDF

 

“A Predictive Reliability Model for PMOS Bias Temperature Degradation,  S. Mahapatra and M.A. Alam, IEDM Technical Digest, pp. 505-508,  (2002).

 

 “Prospects of Using Thin oxides  for Silicon Nanotransistors,”  M. A. Alam, B. E. Weir, and P.J. Silverman, in Proc. International Workshop on Gate Insulators,  pp. 30-34,  (2002). 

 

 “Low Voltage Gate Dielectric Reliability,”  B. Weir, M. Alam, P. Silverman, and Y. Ma,  in ECS Proc. of the ninth international symposium on silicon materials, science, and technology, eds. H.R. Huff, L. Fabry, S. Kishino,  vol. 2, pp. 465-474,  (2002).  

 

“A Mathematical Description of ALD HfO2 Nucleation and Growth Behavior,  M. A. Alam and M. L. Green, and W. Vandervorst,  SEMATECH Meeting on advanced gate dielectrics, Oct. 16, (2002).

 

“A New Analytical Model for High Frequency MOSFET Noise,  S. Donati, F. Bonani, G. Ghione, M. A. Alam, Proceeding of   the Circuits and System Conference, pp. 389-392, (2001).

 

“Can an Accurate Anode Hole Injection Model Resolve the E vs. 1/E controversy ?” [Outstanding Paper Award] M. A. Alam, Jeff Bude, and A. Ghetti,  Proceedings of International Reliability Physics Symposium, pp. 21-26,  (2000).

 

 “Physics and Prospects of sub-2nm Oxides,” M. A. Alam, B. Weir, P. Silverman, J. Bude, A. Ghetti, Y. Ma,  M. Brown, D. Hwang, and A. Hamad,  Proceedings of 4-th International Symposium on the Physics and Chemistry of SiO2 and Si-SiO2 interfaces,  pp. 365-373,  (2000).

 

 “The Statistical Distribution of Percolation Resistance as a Probe into the Mechanics of Ultra-Thin Oxide Breakdown,”  M. A. Alam, B. Weir, P. Silverman, Y. Ma, D. Hwang,  IEDM Technical Digest,  pp. 529-532, (2000).

 

“Native and Stress-Induced Traps in SiO2 Films,”   A. Ghetti, M. Alam, J. Bude, E. Sangiorgi, G. Timp, G. Weber,  Proceedings of 4th Symposium on the Physics and Chemistry of SiO2 and the SiO2 Interface,  p. 419,  (2000).

 

“Critical Microscopic Processes in Semiconductor Lasers,” M. A. Alam, M. Hybertsen, G. Baraff, and R. K. Smith,  in Proceedings of MRS Fall Meeting,  vol. 579, “The Optical Properties of Materials,” Eds. E.L. Shirley, J.R. Chelikowsky, S. G. Louie, and G. Martinez (Warrendata, MRS, 2000)  pp. 181-192.

 

“Simulation of Carrier Dynamics in Multi-Quantum Well Lasers,”  M. Hybertsen, M.A. Alam, G. Baraff, R. Smith, G. Shtengel, C. Reynolds, G. Belenky, in Physics and Simulation of Optoelectronic Devices VIII  SPIE Proceedings, vol. 3944, pp. 486-491, (2000).

 

“Automatic Generation of Equivalent Circuits from Device Simulation,”  A. Pacelli, M. Alam, M. Mastrapasqua, and S. Luryi, Conference on Modeling an Simulation of Microsystems, San Diego, CA, March 27-29, (2000).

 

“Spot-Size-Converted 1.3mm Directly-Modulated Fabry-Perot and DistributedFeedback Lasers Suitable for Passive Alignment and 2.5 Gb/s Operation at 85C,”   C. Klotzkin, J. Eng, G. Ford,Erick Michel, S. Alexander,M. Alam, M. Hybertsen, L. Ketelsen, J. Freund, D. Stampone, L. Reynolds,  IEDM Proceedings, (2000).

 

“ Ultra-thin Oxide Reliability Projections and Alternate Dielectrics,”  B. Weir, G. Wilk, M. Alam, and P. Silverman,  Proceedings of the 1st European Workshop on Ultimate Integration of  Silicon,  p. 65,  (2000). 

 

“Gate Oxides in 50nm Devices:  Thickness Uniformity Improves Projected Reliability,”  B. E. Weir, P. J. Silverman, M.  A. Alam, A. Hamad, F. D. Baumann, G. Timp, A. Ghetti, Y. Ma, M. Brown, and T. Sorsch,  IEDM Technical Digest ,  pp. 437-440, (1999).

 

“Explanation of Soft and Hard Breakdown and its Consequences for Area-Scaling,”  M. A. Alam, B. E. Weir, J. D. Bude, P. J. Silverman, D.  Monroe,  IEDM Technical Digest, pp. 449-452,  (1999).

 

“An Anode Hole Injection Percolation Model for Oxide Breakdown - The Doom's Day Scenario Revisited,”  M. A. Alam, J. Bude, B. Weir, P. Silverman, A. Ghetti, D. Monroe, K. Cheung, and S. Moccio, IEDM Technical Digest,  pp. 715-718,  (1999).

 

“Analysis of trap-assisted conduction mechanism through silicon dioxide films using quantum yield,”  A. Ghetti, M. A. Alam, J. Bude, D. Monroe, E. Sangiorgi, and H. Vaidya,  IEDM Technical Digest, pp. 723-726,   (1999).

 

“Process Simulation of Selective Area MOCVD Growth for Optoelectronic Integrated Circuits,” M. A. Alam, R. People, and M. S. Hybertsen,  SPIE Proceedings on Physics and Simulation of Optoelectronic Devices, vol. 3625,  pp. 440-447, (1999).

 

“Role of p-doping Profile in InGaAsP Multi-Quantum Well Lasers:  Comparison of Simulation and Experiment,”  M. Hybertsen, M. A. Alam, G. Shtengel, G. Belenky, C. Reynolds, R. K. Smith, G.  Baraff, R. Kazarinov, J. Wynn, L. E. Smith,   SPIE Conference Proceedings, vol. 3625, p. 524, (1999).

 

“Role of Doping Profile on Semiconductor Laser Performance: simulation and  experiment,”  Hybertsen, M.S.; Alam, M.A.; Baraff, G.A.; Smith, R.K.; Belenky, G.L.; Donetsky, D.V.; Shtengel, G.E.; Reynolds, C.L., Jr.; Kazarinov, R.F.  in Proc. of Conference on Lasers and Electro-Optics,  pp. 309 –310, 1999.

 

“Microscopic Simulation of Optical Gain in Multi Quantum Well Lasers,”   M. Hybertsen, M. Alam, G. Baraff, K. Smith, G. Schtengel, C. Reynolds, R. Kazarnov, G. Belinky,   in Proc. IEEE Lasers and Electro-Optics Society 12th Annual Meeting, vol. 2, pp. 657-658 (1999).

 

 

1991-1998

 

“Trap-Assisted Tunneling as a mechanism of Degradation  and Noise in 2-5 nm Oxides,”  G. A. Alers, B. E. Weir, M. A. Alam, G. L. Timp, T. W. Sorsch,   International Reliability Physics Symposium,  pp. 76-79,  (1998).

 

“Role of Non-equilibrium Carrier Distribution in Multi-Quantum Well Lasers,”  M. A. Alam, M. S. Hybertsen, G. Baraff, A. Grinberg, R. K. Smith,  Proceedings of International Conference on Compound Semiconductors, p. 193,   (1998)

 

 “Microscopic Simulation of High Speed InGaAsP Lasers,”  M. A. Alam, M. S. Hybertsen, R. K. Smith, G. Shtengel, and G. Baraff,  Presented at the 16-th International Conference on Semiconductor Lasers (ICSL), Nara, Japan, Oct, (1998).

 

“Design Considerations of Optical Interconnects Based on Selective Area MOCVD Process,  M. A. Alam, R. People, S.K. Sputz, D. Lang, J.E. Johnson, S. Chu,  T. Perbell, M. Hybertsen, J. Vandenberg, K. Evans-Lutterodt,  E. Isaacs, L. Gruezke, and M. Marcus.  Presented at the 16-th  International Conference on Semiconductor  Lasers (ICSL), Nara, Japan, Oct, (1998).

 

“Physics-Based RF Noise Modeling of  Submicron MOSFETs,”   S. Donati, M. A. Alam, K. Krisch, S. Martin, M. Pinto, H. Vuong,  IEDM Technical Digest, pp. 81-84,  (1998).

 

“Ultra-Thin Gate Dielectrics: They Break Down, but do they Fail?”   B. E.  Weir, P.  J. Silverman, M. A. Alam, D. Monroe, G. A. Alers, T. Sorsch,  G. Timp, F. Baumann, C.T. Liu, Y. Ma, and D. Hwang, IEDM Technical Digest,  pp. 73-76,  (1997).

 

“Assessment of Quantum Yield Experiments via Full Band Monte Carlo Simulations,”   A. Ghetti, M. A. Alam, J. Bude, and F. Venturi,,  IEDM Technical Digest, pp. 873-876,  (1997).

 

 “Simulation of Quantum Well Lasers,”  M. A. Alam, R.K. Smith, M.S. Hybertsen, G.A. Baraff, and M.R. Pinto,  SPIE  Conference Proceedings on Physics and Simulation of Optoelectronic Devices,  vol. 2994,  p. 709, (1997).

 

 “Numerical Methods for Semiconductor Laser Simulation,  R. K. Smith, M. A. Alam, M. S. Hybertsen, and G. Baraff,  in Proc. of International Workshop on Computational Electronics,  p. 433, (1997).

 

“Comprehensive Simulation of Semiconductor Lasers,” M. A. Alam, M. S. Hybertsen,  G. Baraff, R. K. S mith, M. Pinto,  in Proc. of the 24-th International Conference on Compound Semiconductors,  pp. 625-630,  (1997).

 

“Microscopic Treatment of Heterolayer Transport,''  M. A. Alam and M. S. Lundstrom, presented at the SPIE conference on Optoelectronic Systems and Lasers, Jan. 22-28, (1994).

 

“Entropy flow in a Mesoscopic Conductor and the Entropy of Erasure,”  P. Bagwell and M. A. Alam, in  Proceedings of Physics and Computation: PhysComp '92, D. Matzke, editor, IEEE Computer Society Press, Los Alamitos, Calif., Proceedings pp. 271-275, (1993).

 

 “Simulation of Compound Semiconductor Devices,  M. A. Alam and M. S. Lundstrom,  presented at the Hot Electron Conference, England, May (1993).

 

 “Memory Efficient Scattering Matrix Device Simulation By Decomposing the Effects of Carrier Scattering and Field Acceleration,”  M. A. Stettler, M. A. Alam, M. S. Lundstrom,  Proceedings of International Workshop on VLSI Process and Device Modeling,  pp. 44–45, (1993).

 

   “Mathematical Aspects of Scattering Matrix Approach,”   M. A. Alam, M.A. Stettler and M.S. Lundstrom,  Proceedings of the International Workshop on Computational  Electronics, pp 127-130, (1992).

 

 “A Critical Assessment of Hydrodynamic Transport Model using the Scattering Matrix Approach,'' M. A.   Stettler,  M. A. Alam, and M.S. Lundstrom,  Proceedings of  the NUPAD Conference,  pp. 97-102,  (1992).

 

  “A Monte Carlo simulation Study of Electronic Transport in Dissipative Structures,''  A. N. Khondker and M. A. Alam,  Proceedings of IEEE-Cornell Conference on Advanced Concepts  in High Speed Semiconductor Devices and Circuits, pp. 160-169, (1991).

 

TOP

Patents

"Thin Film Photovoltaic Panels and Repair Methods", S. Dongaonkar and Muhammad A. Alam,  USPTO Application Number 13/761914

"Shade Tolerant Module Design for Thin Film Photovoltaics", S. Dongaonkar and Muhammad A. Alam, USPTO Application Number 61/644,653

“Novel Approaches for Dynamic Soft-Landing in Capacitive MEMS Switches,” A. Jain, M. A. Alam, P. Nair, Filed on June 2011.

 “NEM-FET Based Biosensor for the Detection of Charged/Non-charged Biomolecules,” A. Jain, P. Nair,  M. A. Alam, Filed on Dec. 2011 (Application No. 61/590,084)

 “Medium Scale Carbon Nanotube Thin Film Integrated Circuits on Flexible Plastic Substrate,” J. Rogers, C. Qing,  M. A. Alam, N. Pimparkar, Filed on Dec. 2010.

 “DNA Sequencing and Amplifcation Systems Using Nanoscale Field Effect Sensor Arrays,” R. Bashir, M. A. Alam, D. Akin, O. Eibol, B. Reddy, D. Bergstrom, Y. Liu, Filed on Oct. 2008.

"Process for Fabricating An Optical Waveguide," M. A. Alam, R. People, and M. S. Hybertsen. US Patent Granted on 07/17/2001, Patent Number 6261857.

“Nanowires”, R. Bashir, O. Elibol, D. Bergstrom, M. Alam, Filed 60/762735,  January, 2006.

“Predictive applications for devices with thin dielectric regions” M. Alam, P. Mason, R. Kent Smith, Granted on 06/12/2007, Patent Number 7230812.

"Design and Process of Fabricating Ultra-Short Optical Interconnects," M. A. Alam, J. Sheridan-Eng, and M. S. Hybertsen, July, (1999).

"Design of Monolithic Multiple Wavelength VCSELs for WDM applications," M. A. Alam, M. S. Hybertsen Nov., (1999).

"Design and Process of Fabricating Collector-up Heterojunction Bipolar Transistors, " M. A. Alam, H. Gossman, and P. Ye, Oct. (2002).

TOP 

Thesis

Haldun Kufluoglu, “MOSFET Degradation Due to Negative Bias Temperature Instability and Hot Carrier Injection and Their Implications for Reliability Aware VLSI Desgin” ,2007. PDF

Satish Kumar, 2007.

Kunhyuk Kang, 2007.

Sayeed Hasan, 2006.

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