ADEPT-m

The BETA release of ADEPT-m (MatLab compatible toolbox) is available by request (grayj@purdue.edu) as of 6/23/2017 to those agreeing to provide constructive feedback. Receiving comments/suggestions for different device structures will be a great asset as I work towards fixing bugs and making enhancements.

Current Features (partial list):

• 1D
• steady-state simulation
• small-signal steady-state simulation
• transient simulation
• user customizable analyses (I-V, Solar Cell, EQE, C-V, ...)
• can handle multiple illumination sources incident from both top and bottom
• multiple dopant species
• constant/graded/erfc/Gaussian dopant profiles
• radiative, Auger, SHR, SLT, and amphoteric recombination
• discrete/distributed/multiple recombination centers
• exponential band tails (charge and recombination)
• graded band structure (Eg, Nc, Nv, chi)
• option for both Boltzmann and Fermi-Dirac statistics
• documentation (incomplete - still under development)

Future Enhancements (partial list):

• Octave compatibility
• 2D and perhaps 3D
• "frozen potential" simulation
• default models for specific semiconductor materials (Si, GaAs, etc.)
• band gap narrowing
• photon recycling
• automatic temperature dependence of material parameters (Eg, Nc, Nv, etc.)
• GUI
• better documentation and more examples