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Advanced VLSI Devices


Credit Hours:


Start Date:

August 24, 2020

Learning Objective:


This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. Review of metal oxide semiconductor (MOS) fundamentals along with key process and circuit concepts. Short channel effects in sub-micron channel length metal oxide semiconductor field-effect transistors (MOSFETs) including device scaling considerations. Device physics and technology issues for sub-100 nm (nanoscale) MOSFETs. Limits of silicon device technology and key issues in the continuing miniaturization of devices. Alternative device structures to replace bulk MOSFET. Computer simulation employed throughout the course to examine device issues and prototype new device technologies.

Topics Covered:


ECE 606

Applied / Theory:

90 / 10

Web Address:

Web Content:

Syllabus, homework assignments and solutions.


Weekly (25% of grade), accepted via email (email TBA).


None required.


One midterm exam (35% of grade) and one final exam (40% of grade).


Textbook Required: Yuan Taur & Tak Kning, "Fundamentals of Modern VLSI Devices", 2nd Ed, ISBN: 978-0-521-832946. Disclaimer: final textbook listings are available in April for fall and summer semesters. Please visit the Listing of Textbooks by College or School for the most up-to-date information.

Computer Requirements:

ProEd minimum computer requirements.

ProEd Minimum Requirements:


Tuition & Fees: