%0 Journal Article %J IEEE Electron Device Letters %D 2016 %T Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene %A Chen, Fan %A Ilatikhameneh, Hesameddin %A Ameen, Tarek %A Klimeck, Gerhard %A Rahman, Rajib %Z IEEE Electron Device Letters, Volume: 38, Issue: 1, Jan. 2017, Pages: 130 - 133;doi: 10.1109/LED.2016.2627538