Jun Huang

High-Performance Complementary ІII-V TFETs With Strain Engineering

High-Performance Complementary ІII-V TFETs With Strain Engineering Jun Z. Huang, Yu Wang, Pengyu Long, Yaohua Tan, Michael Povolotskyi, and Gerhard Klimeck

Problem:

  • III-V TFETs have low ON current
  • III-V p-type TFETs are even worse

Objective:

  • Can strain improve III-V TFETs based on UTB structures?
  • Can strain also improve pTFETs?

Approach:

  • Eight-band k·p method with strain
  • Quantum transport with QTBM

Results/Impact:

  • Uniaxial compressive strain shrinks the band gap and reduces (increases) transport (transverse) effective mass
  • ON current of p-type InAs UTB TFETs is improved more than n-type.