Jun Huang

Scalable GaSb/InAs Tunnel FETs With Non-Uniform Body Thickness

Scalable GaSb/InAs Tunnel FETs With Non-Uniform Body Thickness* J. Z. Huang, P. Long, M. Povolotskyi, G. Klimeck, and M. J.W. Rodwell

Problem:

  • GaSb/InAs heterojunction TFETs are NOT scalable because of large tunneling leakage originating from the small band gap and small effective masses of the InAs channel

Objective:

  • To have a scalable design

Approach:

Non-uniform body thickness design

  • thin InAs channel -> a large band gap and large effective masses -> small leakage at OFF state
  • a low tunnel barrier and small tunnel effective masses -> large tunnel probability at ON state/li>

Results/Impact:

  • @Lg=15nm, VDD=0.3V and IOFF=1nA/um, ION=284uA/um, an order of magnitude larger than the uniform case (25uA/um).
  • Scalable to sub-10nm channel length



 
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