Jun Huang

Mode space simulation of nitride heterojunction tunneling FETs

Mode space simulation of nitride heterojunction tunneling FETs J. Z. Huang, H. Ilatikhameneh, T. Ameen, S. Sharmin, M. Povolotskyi, G. Klimeck, and R. Rahman

Objective:

  • GaN-InN-GaN heterojunction nanowire tunneling FET design and optimization.

Problem:

  • Nanowire structures are numerically too intensive to simulate with NEGF/QTBM approach

Approach:

  • Tight binding mode space approach*

Results:

  • Mode space basis generated for InN and GaN nanowires upto (8nm)2 cross section
  • Ballistic performance obtained and device structure optimized