%0 Generic %D 2005 %T Bandstructure and Orientation Effects in Si and Ge Nanowire FETs %A Wang, Jing %A Rahman, Anisur %A Klimeck, Gerhard %A Lundstrom, Mark %Z 2005 IEEE International Electron Devices Meeting, Washington, DC, December 5 - 7, 2005. (One of 27 accepted out 120 submitted Modeling and Simulation abstracts).