%0 Generic %D 2016 %T A Tunnel FET Design for High-Current, 120 mV Operation %A Long, Pengyu %A Huang, Jun %A Povolotskyi, Michael %A Verreck, Devin %A Charles, James %A Kubis, Tillmann C %A Klimeck, Gerhard %A Rodwell, Mark %A Calhoun, B. %Z IEEE International Electron Devices Meeting, December 3-7, 2016, San Francisco