%0 Generic %D 2014 %T Atomistic Tight-binding Modeling of III-Nitride Materials and Field Effect Transistors %A Sharmin, Saima %A Ilatikhameneh, Hesameddin %A Tan, Yaohua %A Novakovic, Bozidar %A Ameen, Tarek %A Lyons, J. %A Walle, C. %A Li, Wenjun %A Fay, Patrick %A Rahman, Rajib %A Klimeck, Gerhard %Z 2014 LEAST (Center for Low Energy Systems Technology) Annual Review, August 12 - 14, 2014 , University of Notre Dame.