Learning Objective:To provide an understanding of the semiconductor devices that are in general use today and the basic tools necessary to learn about new devices
Description:A relatively broad, moderate depth coverage of semiconductor devices and related topics; semiconductor fundamentals required in the operational analysis of solid state devices; the devices then treated are the pn junction diode, the bipolar junction transistor, and the metal-oxide-semiconductor capacitor and field effect transistor.
Topics Covered:: Relatively broad, moderate depth coverage of semiconductor devices and related topics; Semiconductor fundamentals required in the operational analysis of solid state devices; PN junction diode; Bipolar junction transistor; Metal-oxide-semiconductor capacitor; Field effect transistor.
Prerequisites:Classical physics, electrostatics, modern physics, transistor and diode IV characteristics.
Applied / Theory:30 / 70
Homework:Approximately 12 problem sets during the semester. These will not be graded, but will be credited for submission.
Exams:Five midterm exams and 1 final exam.
Textbooks:Official textbook information is now listed in the Schedule of Classes. NOTE: Textbook information is subject to be changed at any time at the discretion of the faculty member. If you have questions or concerns please contact the academic department.
Tentative--Required--R. F. Pierret, "Advanced Semiconductor Fundamentals," Addison-Wesley, 2nd, ISBN:978013061792 Semiconductor Fundamentals, 2nd edition, Robert Pierret, Addison Wesley, ISBN: 9780201543933