Purdue Engineering Professional Education

logo header header
Toll-Free in U.S. (877) 598-4233
     Print
ECE61200 - Advanced VLSI Devices

Fall 2016

Days/Time: TTh / TBA
Credit Hours: 3

Learning Objective:
None

Description:
This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies. Review of metal oxide semiconductor (MOS) fundamentals along with key process and circuit concepts. Short channel effects in sub-micron channel length metal oxide semiconductor field-effect transistors (MOSFETs) including device scaling considerations. Device physics and technology issues for sub-100 nm (nanoscale) MOSFETs. Limits of silicon device technology and key issues in the continuing miniaturization of devices. Alternative device structures to replace bulk MOSFET. Computer simulation employed throughout the course to examine device issues and prototype new device technologies.

Topics Covered:
None

Prerequisites:
ECE 606

Applied/Theory: 90/10

Web Address:
http://www.itap.purdue.edu/learning/tools/blackboard/

Web Content:
Syllabus, homework assignments and solutions.

Homework:
Weekly (25% of grade), accepted via email (email TBA).

Projects:
None required.

Exams:
One midterm exam (35% of grade) and one final exam (40% of grade).

Textbooks:
Textbook Required: Yuan Taur & Tak Kning, "Fundamentals of Modern VLSI Devices", 2nd Ed, ISBN: 978-0-521-832946. Disclaimer: final textbook listings are available in April for fall and summer semesters. Please visit the Listing of Textbooks by College or School for the most up-to-date information.

Computer Requirements:
ProEd minimum computer requirements.

ProEd Minimum Requirements:
view

Tuition & Fees: view

Joerg Appenzeller
Phone
765-494-1076
Email
appenzeller@purdue.edu
Office
Purdue University
Birck Nanotechnology Center
1205 West State Street
West Lafayette, IN 47907-2057
Fax
765-496-8383
Instructor HomePage