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ECE60600 - Solid-State Devices

Fall 2015

Days/Time: TTh / TBD
Credit Hours: 3

Learning Objective:
To provide an understanding of the semiconductor devices that are in general use today and the basic tools necessary to learn about new devices.

Description:
A relatively broad, moderate depth coverage of semiconductor devices and related topics; semiconductor fundamentals required in the operational analysis of solid state devices; the devices then treated are the pn junction diode, the bipolar junction transistor, and the metal-oxide-semiconductor capacitor and field effect transistor.

Topics Covered:
Relatively broad, moderate depth coverage of semiconductor devices and related topics; Semiconductor fundamentals required in the operational analysis of solid state devices; PN junction diode; Bipolar junction transistor; Metal-oxide-semiconductor capacitor; Field effect transistor.

Prerequisites:
Classical physics, electrostatics, modern physics, transistor and diode IV characteristics.

Applied/Theory: 30/70

Homework:
Approximately 12 problem sets during the semester.

Projects:
None.

Exams:
Two one-hour exams and one two-hour final exam.

Textbooks:
Required--R. F. Pierret, "Advanced Semiconductor Fundamentals," Addison-Wesley, 1987, ISBN 0-201-05338-1. S. M. Sze, "Physics of Semiconductor Devices," Wiley Interscience, 2nd ed., 1981, ISBN 0-471-05661-8.

Computer Requirements:
ProEd minimum computer requirements.

ProEd Minimum Requirements: view

Tuition & Fees: view

Other Requirements:
None.

T. B. D.
Phone
None
Email
proed@purdue.edu
Office
Campus
Building
Address
West Lafayette, IN 47907