ECE60600 - Solid-State DevicesFall 2015
Days/Time: TTh / TBD
Credit Hours: 3
To provide an understanding of the semiconductor devices that are in general use today and the basic tools necessary to learn about new devices.
A relatively broad, moderate depth coverage of semiconductor devices and related topics; semiconductor fundamentals required in the operational analysis of solid state devices; the devices then treated are the pn junction diode, the bipolar junction transistor, and the metal-oxide-semiconductor capacitor and field effect transistor.
Relatively broad, moderate depth coverage of semiconductor devices and related topics; Semiconductor fundamentals required in the operational analysis of solid state devices; PN junction diode; Bipolar junction transistor; Metal-oxide-semiconductor capacitor; Field effect transistor.
Classical physics, electrostatics, modern physics, transistor and diode IV characteristics.
Approximately 12 problem sets during the semester.
Two one-hour exams and one two-hour final exam.
Official textbook information is now listed in the Schedule of Classes. NOTE: Textbook information is subject to be changed at any time at the discretion of the faculty member. If you have questions or concerns please contact the academic department.
Required--R. F. Pierret, "Advanced Semiconductor Fundamentals," Addison-Wesley, 1987, ISBN 0-201-05338-1. S. M. Sze, "Physics of Semiconductor Devices," Wiley Interscience, 2nd ed., 1981, ISBN 0-471-05661-8.
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