[BNC-grads-list] PUSPM seminar this Friday, Birck 2001, 11:30 a.m.

[Deborah S Starewich]

> Dear PUSPM community,
>
> There will be a PUSPM seminar this Friday, September 11th, in Birck  
> 2001 given
> by Michael Bolen on "Graphene formation mechanisms on 4H-SiC."   
> Pizza will be
> provided at 11:30 a.m., the talk will begin at 12:00 and end by 1:00  
> p.m..  See
> the below abstract for more details on the talk.  I hope to see you  
> there.
>
> Ryan Wagner
> PUSPM student coordinator
>
>
> Abstract:
>
> Research on graphene has exploded in the past few years given the  
> profound
> possibilities it possesses to revolutionize the semiconductor  
> industry. There
> are many techniques being explored to create a reproducible and  
> uniform graphene
> layer for electronic devices, one of which is through the thermal  
> decomposition
> of silicon carbide. The creation of graphite through this method has  
> been known
> for over 30 years, but the formation mechanisms at the microscopic  
> level have
> not been thoroughly explored. In this talk, graphene formation on  
> both the Si-
> and C-face of 4H-SiC is explored primarily through the use of atomic  
> force
> microscopy (AFM). A hot-walled chemical vapor deposition system is  
> used to vary
> the graphene synthesizing conditions and the resultant morphologies  
> are measured
> ex-situ. Small changes in growth conditions are found to cause severe
> morphological changes to each polar surface which are captured  
> through scanning
> probe microscopy. Height and phase data gathered from AFM depict how  
> graphene
> spreads over the 4H-SiC surface. Data from scanning tunneling  
> microscopy is used
> to confirm the presence of graphene and corroborate the AFM data.
>




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