[BNC-grads-list] Seminar by Dr. Adina Scott, Thurs. 11/6 at 10:30 am (BNC 1001)

[Laura Biedermann]

Hi all,

NSAC is hosting a seminar by Adina Scott this Thursday, 11/6 at 10:30  
am in Birck 1001.  Until she defended her thesis in September, Adina  
was a graduate student at Birck, working in Prof. Janes group.

Please come to her seminar Thursday morning on metal-molecule-silicon  
devices (MMS devices).  Adina will be speaking about the fabrication,  
characterization, and applications of MMS devices.

As a bonus, NSAC is providing cookies and tea.

Thank you,

NSAC
Nanotechnology Student Advisory Council


Metal-Molecule-Silicon Heterostructures

Thursday, November 6, 2008

Birck Nanotechnology Building, Room 1001

10:30 A.M.

Dr. Adina Scott

Electrical Engineering, Purdue University

Recently there has been significant interest in incorporating  
molecular elements into electronic devices for electronics, memory,  
and chemical/biological sensing applications. To date much of the work  
on this topic has utilized metal electrodes however using silicon (Si)  
presents physical and technological advantages. Molecules can be  
covalently bound to Si surfaces. Device properties can be tailored  
both by changing the surface chemistry and by doping the Si. Moreover,  
Si is technologically relevant for electronics applications. This  
study focuses on the development, characterization, and modeling of  
metal/molecule/Si (MMS) devices. Si surfaces have been functionalized  
with various organic species and the resulting molecular layers have  
been characterized using a variety of surface-analysis techniques. The  
structural and chemical properties of metallized molecular layers have  
been characterized using in-situ spectroscopic measurements. MMS  
devices with various molecular layers, Si doping types, and doping  
densities have been fabricated and electrically characterized using  
capacitance-voltage and temperature-dependent current-voltage  
measurements. A model has been developed in which MMS devices are  
described by a four-layer structure consisting of the metal, the  
molecular layer, the Si surface, and the Si bulk. Electronic transport  
is modulated by the molecular layer, which acts as a tunnel barrier  
with a transmission coefficient that depends on the molecular- 
electronic structure, and the Si surface, which can be accumulated or  
depleted depending on the device electrostatics. In the MMS devices  
developed and analyzed in the study, electronic transport is governed  
by the interplay between the molecular-electronic properties and Si  
bandstructure, enabling novel hybrid organic/semiconductor  
functionality.

Biography:

Adina Scott has been working with Prof. David Janes since 2003.  In  
September 2008, she defended her PhD thesis, “Metal/Molecule/Silicon  
Devices: Realizing Hybrid Semiconductor/Organic Functionality.” She  
has received numerous awards including a NSF Graduate Research  
Fellowship and a Purdue Doctoral Fellowship.  She received her BSE in  
Electrical Engineering and BA in Music from Case Western Reserve  
University in 2003.
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