[BNC-all] BNC E-news for the week of January 13th

[Anthrop, Heather L]

Final Exam
Missing Equipment
Seminar
XPS Workshop

Final Exam
Mohammed Imrul Hossain
Birck 1001 at 3:00 pm
Monday, January 13th

Intersubband Transitions in III-V Semiconductors for Novel Infrared Optoelectronic Devices

Intersubband transitions (ISBTs) in the conduction band (CB) of semiconductor multiple quantum wells (QW) have led to devices, like quantum-well
infrared photodetectors and quantum cascade lasers (QCL). Due to the complexities related to the valence band (VB), hole ISBTs have not been explored as intensively as their electronic counterparts. Absorption and photoluminescence due to ISBT in the VB have been reported for p-type Si-SiGe QWs but this material system suffers from significant challenges associated with the built-in strain of these lattice mismatched materials. The GaAs/AlGaAs material system is virtually strain-free and quite mature. We are investigating the properties of bound-to-bound inter-valence subband transitions in GaAs QWs with high Al composition barriers for mid-infrared emitters. Hole ISBTs are interesting because the polarization of the light emitted in heavy-to-light hole transitions is not restricted to the perpendicular of the quantum wells (unlike electron ISBTs in the CB due to selection rules), therefore surface emitting QCLs and ultimately vertical-cavity surface emitting devices are possible using these transitions.  Moreover the valenceband offset for pure GaAs and AlAs is comparable with the conduction-band offset in the traditional InGaAs/InAlAs lattice matched to InP system. Very recently we have observed strong heavy to light hole absorption and heavy to heavy hole electroluminescence from ridge waveguide structures in the mid infra-red range. We are also working on dual wavelength mid infra-red QCLs in the InGaAs/InAlAs system
lattice matched to InP. This may be useful in applications like differential absorption lidar where light has to be evaluated and compared at two different frequencies for environmental sensing application. Most approaches to multi-wavelength QCL operation involve the use of heterogeneous cascades. Our design involves a single type of active region to emit at two widely different wavelengths in the mid-infrared range. These results provide insights in the detail charge transport and optical properties of this design concept. We are currently investigating the possibility of this type of dual wavelength laser for inversionless lasing.

Missing Equipment

Please return the lab cart (similar to that pictured) to the second floor east wing. If you are using the cart and will need it longer please speak with Lisa Reece as soon as possible.
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Seminar
Ahmed Busnaina
Thursday, January 23rd at 11:00 am
Birck 1001

Advanced Nanomaterials-based Manufacturing Platform for Printed Sensors, Electronics, Energy and Material Applications

Ahmed A. Busnaina, Ph.D. is the William Lincoln Smith Chair Professor and Director of National Science Foundation's Nanoscale Science and
Engineering Center (NSEC) for High-rate Nanomanufacturing (CHN) at Northeastern University, Boston, MA. He is internationally recognized for his work on nano and micro scale defect (particulate and chemical) mitigation and removal in semiconductor fabrication. He also involved in the fabrication of nanoscale wires, structures and interconnects. He specializes in directed assembly of nanoelements and in the fabrication of micro and nanoscale structures. He served as a consultant on micro contamination and particle adhesion issues to the semiconductor industry. He has authored more than 470 papers in journals, proceedings and conferences. His research support exceeds 47 million dollars. He is on the editorial advisory board of Semiconductor International, the Journal of Particulate Science and Technology. He is a fellow of the American Society of Mechanical Engineers, and the Adhesion Society, a Fulbright Senior Scholar and listed in Who's Who in the World, in America, in science and engineering. He was awarded the 2006 Nanotech Briefs National Nano50 Award, Innovator category, the 2006 Outstanding Faculty Research Award, Northeastern University 2006, the 2005 Aspiration Award, Northeastern University.

The NSF Center for High-rate Nanomanufacturing (CHN) has developed a novel reconfigurable manufacturing technology platform that
operates at ambient temperature and pressure, is water-based, material-independent and low energy, and requires small capital investment. It has been used to make structures and devices across length scales. The center has developed templates with nanoscale features to assemble and print structures down to 20 nm in a short time and over a large area. Recently, a rapid and scalable manufacturing process for 3D nanoscale features was developed to fabricate interconnects and plasmonic devices using nanoparticles. Nonvolatile memory switches using CNTs or molecules assembled at wafer level is one application. Another application is a new biosensor chip (0.02 mm2) capable of simultaneously detecting multiple biomarkers. The biosensor can be in vitro or in vivo with a detection limit that is 200 times lower than current technology. The center also developed several CNT and MoS2 based electronic devices. The center develops the fundamental science and engineering necessary to manufacture a wide array of applications ranging from electronics, energy, sensors and materials to biotechnology. A directed assembly-based nanomanufacturing factory could be built for as low as $50 million, a fraction of today's cost, making nanotechnology accessible to millions of new innovators and entrepreneurs and unleashing a wave of creativity in the same way as the advent of the PC did for computing.

XPS Workshop

You are invited to join us at Birck Nanotechnology Center for some XPS Training.
Sessions will be run by Dmitry Zemlyanov (dzemlian at purdue.edu<mailto:dzemlian at purdue.edu>), Surface Science Application Scientist

Intro to XPS - January 16-17, 2014  Registration at: http://bit.ly/1eqIM8U
The Intro to XPS flier at: https://dl.dropboxusercontent.com/u/12901964/XPS%20Workshop%20Flyer.pdf

Intro to CasaXPS - January 20-21, 2014   Registration at: http://bit.ly/IYeOeu
The Intro to CasaXPS flier at: https://dl.dropboxusercontent.com/u/12901964/CasaXPS%20Workshop%20flyer.pdf

Do let me know if you have any questions (dzemlian at purdue.edu<mailto:dzemlian at purdue.edu>).

Thanks,
*****************************************
Dmitry Zemlyanov, PhD
Surface Science Application Scientist
Purdue University Birck Nanotechnology Center,
1205 West State Street, West Lafayette, IN 47907-2057
Tel.: +1 (765) 496-2457 (office - BRK 1274)
      +1 (765) 496-6217 (lab - BRK 1077)
Cell: +1 (765) 427-3813
Fax:  +1 (765) 496-8299
mailto:dzemlian at purdue.edu
web: http://www.purdue.edu/dp/Nanotechnology/facilities/XPS.php
Surface Science Facility Schedule: https://www.google.com/calendar/embed?src=bircksurfaceanalysis%40gmail.com&ctz=America/New_York

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