Graduate Student Heng Wu wins 2013 SISC Ed Nicollian Best Student Paper Award
Graduate Student Heng Wu has won the 2013 Nicollian Best Paper Award at 2013 IEEE Semiconductor Interface Specialist Conference (SISC). His paper is titled "Ultra-scaled Junctionless MOSFETs on GeOI Substrates". Record high drain current on Ge NMOSFET was reported at sub-10nm channel length with a newly designed V-gate structure. High performance Ge NMOSFET is a long-standing technical challenge in the development of transistor technology.
He is advised by Professor Peide Ye. This is the second year in a row that one of Professor Ye's students has won the award.