Wide and Ultra-Wide Bandgap Semiconductors for Optoelectronics and Electronics
|Event Date:||September 29, 2017|
|Speaker:||Associate Professor Hongping Zhao|
|Speaker Affiliation:||The Ohio State University, Columbus, OH|
|Sponsor:||Dept. of Physics & Astronomy|
|Type:||Condensed Matter Seminar
|Location:||PHYS 203, Refreshments 3:00pm PHYS 242|
III-nitride (Al, Ga, In, -N) semiconductors and heterostructures have significantly advanced device technologies in electronics and optoelectronics, especially for high- power, high-speed electronics, and UV/visible light-emitting diodes and semiconductor lasers. II-IV-nitrides are derived conceptually from the III-nitrides by replacing each of two group III atoms by a pair of group II and group IV atoms. Expanding the nitride family to include the II-IV-nitride compounds opens new possibilities for band structure and device engineering that is unachievable from pure III-nitride heterostructures. In this talk, novel heterostructures using closely-lattice matched GaN/ZnGeN2 will be presented with two examples: (i) a novel type-II quantum well design based on InGaN/ZnGeN2 heterostructures for high efficiency light emitter devices; and (ii) a coupled quantum well design based on GaN/ZnGeN2 heterostructures for intersubband transitions for quantum cascade laser application.
Recently, gallium oxide (Ga2O3) as a semiconductor material has attracted lots of interests due to its large bandgap (4.6-4.9 eV), promising for high power electronics and short wavelength optoelectronics. Our efforts on both homoepitaxy and heteroepitaxy of β-Ga2O3 via low pressure chemical vapor deposition method will be discussed. In addition, the synthesis of nanostructures/nanomaterials for sensing and mechanical device applications will be presented.