Developing products using GaN on Si Technology – Challenges and Opportunities
|Event Date:||October 26, 2018|
|Speaker Affiliation:||Tagore Technology|
|School or Program:||Electrical and Computer Engineering
Dr. Amitava Das
The advantages of GaN technology for RF and Power Electronics are well documented. This talk will address the next phase of the evolution – technical and economic challenges of displacing the incumbent technology, Si, especially in the area of industrial and consumer applications. RF applications of GaN in are more widespread than power electronics applications. Besides power amplifiers, Tagore Technology has developed very compact high power RF switches for various infrastructure applications. We will discuss GaN products/applications in the context of wideband radios, such as SDR, as well as narrow band applications such as in 5G small cells. GaN on Si technology is emerging as a strong contender for power electronics applications in the mid voltage range (100-650V). Unlike RF, GaN is just beginning to appear in power applications. Tagore Technology has developed GaN half bridge with integrated driver to ease design of GaN into various power applications. We will highlight a few opportunities for GaN to play an important role in the near term (1-3 years). Si technology has a history of 50+ years, but GaN products are just beginning to appear, so reliability is a key concern. We will review how the industry is addressing reliability concerns for GaN device end users.
Mark Lundstrom, firstname.lastname@example.org, 49-47714